Surface roughness at the F Gamiz, JB Roldan, JA López-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
156 1999 Effects of the inversion-layer centroid on the performance of double-gate MOSFETs JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
101 2000 Effects of the inversion layer centroid on MOSFET behavior JA Lopez-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
99 1997 Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
85 2002 Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
80 2001 Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
65 1999 Remotely piloted aircraft (RPA) in agriculture: A pursuit of sustainability A Ahmad, J Ordoñez, P Cartujo, V Martos
Agronomy 11 (1), 7, 2020
50 2020 Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration F Gamiz, JB Roldan, A Godoy, P Cartujo-Cassinello, JE Carceller
Journal of applied physics 94 (9), 5732-5741, 2003
36 2003 Coulomb scattering model for ultrathin silicon-on-insulator inversion layers F Gamiz, F Jiménez-Molinos, JB Roldan, P Cartujo-Cassinello
Applied physics letters 80 (20), 3835-3837, 2002
32 2002 Strained-Si on Si/sub 1-x/Ge/sub x/MOSFET mobility model JB Roldan, F Gamiz, P Cartujo-Cassinello, P Cartujo, JE Carceller, ...
IEEE Transactions on Electron Devices 50 (5), 1408-1411, 2003
26 2003 Monte Carlo simulation of electron transport in silicon-on-insulator devices F Gámiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Proc. 10th Int. Symp. SOI Technology Devices, 157-168, 2001
21 2001 Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects JB Roldan, F Gamiz, JA Lopez-Villanueva, P Cartujo-Cassinello
IEEE Electron Device Letters 21 (5), 239-241, 2000
21 2000 Electron transport in silicon-on-insulator devices F Gámiz, JB Roldán, JA López-Villanueva, P Cartujo-Cassinello, ...
Solid-State Electronics 45 (4), 613-620, 2001
13 2001 Monte Carlo simulation of electron mobility in silicon-on-insulator structures F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Solid-State Electronics 46 (11), 1715-1721, 2002
12 2002 Remote surface roughness scattering in ultrathin-oxide MOSFETs F Gamiz, A Godoy, F Jimenez-Molinos, P Cartujo-Cassinello, JB Roldan
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
11 2003 Silicon-On-Insulator Technology and Devices X F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Electrochem. Soc. Proc., PV-2001-3, Ed. by S. Cristoloveanu et al …, 2001
11 2001 SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes F Jiménez-Molinos, G González-Cordero, P Cartujo-Cassinello, ...
2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017
7 2017 Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, JE Carceller, ...
Applied physics letters 83 (15), 3120-3122, 2003
5 2003 Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers F Gamiz, P Cartujo-Cassinello, J Roldan, C Sampedro, A Godoy
Proc. Intern. Symp. on Silicon-on-Insulator Tech. and Devices, 39-44, 2005
4 2005 Image and exchange-correlation effects in double gate silicon-on-insulator transistors F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, JE Carceller, ...
Microelectronic engineering 72 (1-4), 374-378, 2004
4 2004 