Direct synthesis of van der Waals solids YC Lin, N Lu, N Perea-Lopez, J Li, Z Lin, X Peng, CH Lee, C Sun, ... Acs Nano 8 (4), 3715-3723, 2014 | 340 | 2014 |
Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices JAR Michael S Bresnehan, Matthew J Hollander, Maxwell ACS Nano 6 (6), 5234-5241, 2012 | 158 | 2012 |
Prospects of direct growth boron nitride films as substrates for graphene electronics MS Bresnehan, MJ Hollander, M Wetherington, K Wang, T Miyagi, ... Journal of Materials Research 29 (3), 459-471, 2014 | 84 | 2014 |
Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films MT Alam, MS Bresnehan, JA Robinson, MA Haque Applied Physics Letters 104 (1), 2014 | 62 | 2014 |
800 Gbps fully integrated silicon photonics transmitter for data center applications H Yu, D Patel, W Liu, Y Malinge, P Doussiere, W Lin, S Gupta, ... Optical Fiber Communication Conference, M2D. 7, 2022 | 56 | 2022 |
Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers MS Bresnehan, GR Bhimanapati, K Wang, DW Snyder, JA Robinson ACS Applied Materials & Interfaces 6 (19), 16755-16762, 2014 | 26 | 2014 |
Heterogeneous integration of hexagonal boron nitride on bilayer quasi‐free‐standing epitaxial graphene and its impact on electrical transport properties MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ... physica status solidi (a) 210 (6), 1062-1070, 2013 | 21 | 2013 |
ACS Nano 8, 3715 (2014) YC Lin, N Lu, N Perea-Lopez, J Li, Z Lin, X Peng, CH Lee, C Sun, ... Crossref, ISI, 0 | 14 | |
Investigation of graphene-based nanoscale radiation sensitive materials JA Robinson, M Wetherington, Z Hughes, M LaBella III, M Bresnehan Micro-and Nanotechnology Sensors, Systems, and Applications IV 8373, 135-143, 2012 | 6 | 2012 |
Synthesis and characterization of hexagonal boron nitride for integration with graphene electronics MS Bresnehan The Pennsylvania State University, 2013 | 3 | 2013 |
Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics MS Bresnehan, MJ Hollander, RL Marucci, M LaBella, KA Trumbull, ... Carbon Nanotubes, Graphene, and Associated Devices V 8462, 54-62, 2012 | 2 | 2012 |
Microwave plasma chemical vapor deposition of homoepitaxial diamond for MiP diodes: A study of reactor design, growth kinetics, and surface morphology MS Bresnehan | 2 | 2010 |
400Gbps Fully Integrated DR4 Silicon Photonics Transmitter for Data Center Applications H Yu, P Doussiere, D Patel, W Lin, K Al-hemyari, J Park, C Jan, R Herrick, ... Optical Fiber Communication Conference (OFC) 2020, 2020 | | 2020 |
Heterogeneous integration of hexagonal boron nitride on bilayer quasi‐free‐standing epitaxial graphene and its impact on electrical transport properties (Phys. Status Solidi A … MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ... physica status solidi (a) 210 (6), 2013 | | 2013 |
High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ... 70th Device Research Conference, 177-178, 2012 | | 2012 |
Affects of Nitrogen Addition on the Growth Rate and Properties of MPCVD Diamond Films MS Bresnehan Pennsylvania State University, 2008 | | 2008 |