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Peng Zhao
Peng Zhao
Adresse e-mail validée de apple.com
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Année
Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
PD Lomenzo, P Zhao, Q Takmeel, S Moghaddam, T Nishida, M Nelson, ...
Journal of Vacuum Science & Technology B 32 (3), 2014
1452014
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis
P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ...
2D Materials 5 (3), 031002, 2018
932018
Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young
Applied Physics Letters 111 (3), 2017
762017
Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure
P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ...
ACS Applied Electronic Materials 1 (2), 210-219, 2019
582019
Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ...
Applied Physics Letters 112 (25), 2018
542018
Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy
P Zhao, A Azcatl, YY Gomeniuk, P Bolshakov, M Schmidt, SJ McDonnell, ...
ACS applied materials & interfaces 9 (28), 24348-24356, 2017
502017
Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
P Zhao, A Azcatl, P Bolshakov, J Moon, CL Hinkle, PK Hurley, ...
J. Vac. Sci. Technol. B 35, 01A118, 2017
502017
Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young
Microelectronic Engineering 178, 190-193, 2017
382017
Electrical characterization of top-gated molybdenum disulfide metal–oxide–semiconductor capacitors with high-k dielectrics
P Zhao, PB Vyas, S McDonnell, P Bolshakov-Barrett, A Azcatl, CL Hinkle, ...
Microelectronic Engineering 147, 151-154, 2015
352015
High-stability pH sensing with a few-layer MoS2 field-effect transistor
H Wang, P Zhao, X Zeng, CD Young, W Hu
Nanotechnology 30 (37), 375203, 2019
342019
Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System
P Zhao, A Padovani, P Bolshakov, A Khosravi, L Larcher, PK Hurley, ...
ACS Applied Electronic Materials 1 (8), 1372-1377, 2019
272019
(Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric
CD Young, P Zhao, P Bolshakov, A Azcatl, PK Hurley, YY Gomeniuk, ...
ECS Transactions 75 (5), 153-162, 2016
142016
Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study
P Zhao, A Azcatl, P Bolshakov, PK Hurley, RM Wallace, CD Young
Microelectronic Test Structures (ICMTS), 2016 International Conference on …, 2016
82016
Investigating interface states and oxide traps in the MoS2/oxide/Si system
E Coleman, G Mirabelli, P Bolshakov, P Zhao, E Caruso, F Gity, ...
Solid-State Electronics 186, 108123, 2021
72021
(Invited) Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics
CD Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, ...
Meeting Abstracts, 219-225, 2017
7*2017
Relatively low-temperature processing and its impact on device performance and reliability
CD Young, P Bolshakov, RAR Davila, P Zhao, C Smyth, ...
ECS Transactions 90 (1), 89, 2019
12019
Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2field-effect-transistors
P Bolshakov, P Zhao, CM Smyth, A Azcatl, RM Wallace, CD Young, ...
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017
12017
Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics
P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ...
American Institute of Physics Inc., 2019
2019
Electrical characterization of process induced effects on non-silicon devices
CD Young, P Bolshakov, RA Rodriguez-Davila, P Zhao, A Khosravi, ...
2018 International Conference on IC Design & Technology (ICICDT), 173-176, 2018
2018
Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time
P Bolshakov, A Khosravi, P Zhao, RM Wallace, CD Young, PK Hurley
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018
2018
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