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Luca Redaelli
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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ...
Applied Physics Letters 105 (13), 2014
822014
Design of broadband high-efficiency superconducting-nanowire single photon detectors
L Redaelli, G Bulgarini, S Dobrovolskiy, SN Dorenbos, V Zwiller, ...
Superconductor Science and Technology 29 (6), 065016, 2016
562016
Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
A Mukhtarova, S Valdueza-Felip, L Redaelli, C Durand, C Bougerol, ...
Applied Physics Letters 108 (16), 2016
352016
Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer
A Mukhtarova, L Redaelli, D Hazra, H Machhadani, S Lequien, ...
Optics Express 26 (13), 17697-17704, 2018
252018
Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics
L Redaelli, V Zwiller, E Monroy, JM Gérard
Superconductor Science and Technology 30 (3), 035005, 2017
242017
Pin InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S Valdueza-Felip, A Ajay, L Redaelli, MP Chauvat, P Ruterana, T Cremel, ...
Solar Energy Materials and Solar Cells 160, 355-360, 2017
222017
Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
L Redaelli, A Mukhtarova, A Ajay, A Núńez-Cascajero, S Valdueza-Felip, ...
Japanese Journal of Applied Physics 54 (7), 072302, 2015
212015
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
L Redaelli, M Martens, J Piprek, H Wenzel, C Netzel, A Linke, YV Flores, ...
Gallium Nitride Materials and Devices VII 8262, 186-193, 2012
162012
Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al, In) GaN laser diodes
J Jeschke, U Zeimer, L Redaelli, S Einfeldt, M Kneissl, M Weyers
Applied Physics Letters 105 (17), 2014
132014
Ohmic contacts on N-face N-type GaN after low temperature annealing
L Redaelli, A Muhin, S Einfeldt, P Wolter, L Weixelbaum, M Kneissl
IEEE Photonics Technology Letters 25 (13), 1278-1281, 2013
132013
Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation
L Redaelli, H Wenzel, J Piprek, T Weig, S Einfeldt, M Martens, G Lükens, ...
IEEE Journal of Quantum Electronics 51 (8), 1-6, 2015
122015
Index antiguiding in narrow ridge-waveguide (In, Al) GaN-based laser diodes
L Redaelli, H Wenzel, M Martens, S Einfeldt, M Kneissl, G Tränkle
Journal of Applied Physics 114 (11), 2013
112013
Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications
L Redaelli
Cuvillier Verlag, 2013
52013
Method for forming a metal contact on a surface of a semiconductor, and device with a metal contact
S Einfeldt, L Redaelli, M Kneissl
US Patent 9,768,356, 2017
22017
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
L Redaelli, H Wenzel, T Weig, G Lükens, S Einfeldt, UT Schwarz, ...
CLEO: Science and Innovations, CF1F. 3, 2013
12013
Advanced Superconducting Nanowire Single Photon Detectors for Photonic Quantum Technologies
JM Gérard, A Mukhtarova, L Redaelli, H Machhadani, E Monroy, V Zwiller
Proceedings 2 (13), 727, 2018
2018
High absorption efficiency and polarization-insensitivity in superconducting-nanowire single-photon detectors
L Redaelli, G Bulgarini, S Dobrovolskiy, S Dorenbos, A Mukhtarova, ...
Quantum Sensing and Nano Electronics and Photonics XIV 10111, 395-403, 2017
2017
Gain Anisotropy of Laser Diodes on Nonpolar and Semipolar GaN
J Rass, T Wernicke, L Redaelli, J Kupec, B Witzigmann, M Brendel, ...
International Workshop on Nitride semiconductors (IWN2010), 2010
2010
Facet formation and ohmic contacts for laser diodes on non-and semipolar GaN
J Rass, S Ploch, P Vogt, T Wernicke, L Redaelli, S Einfeldt, M Kneissl
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2009
2009
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Articles 1–19