Suivre
Byung Gook Park
Byung Gook Park
Professor of Electrical Engineering, Seoul National University
Adresse e-mail validée de snu.ac.kr
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Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
WY Choi, BG Park, JD Lee, TJK Liu
IEEE Electron Device Letters 28 (8), 743-745, 2007
17152007
Three-dimensional NAND flash architecture design based on single-crystalline stacked array
Y Kim, JG Yun, SH Park, W Kim, JY Seo, M Kang, KC Ryoo, JH Oh, ...
IEEE Transactions on Electron Devices 59 (1), 35-45, 2011
2352011
Demonstration of L-shaped tunnel field-effect transistors
SW Kim, JH Kim, TJK Liu, WY Choi, BG Park
IEEE transactions on electron devices 63 (4), 1774-1778, 2015
2092015
Single-crystalline Si stacked array (STAR) NAND flash memory
JG Yun, G Kim, JE Lee, Y Kim, WB Shim, JH Lee, H Shin, JD Lee, ...
IEEE Transactions on Electron Devices 58 (4), 1006-1014, 2011
1942011
RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs
S Cho, KR Kim, BG Park, IM Kang
IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011
1822011
Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
1532017
The analysis of dark signals in the CMOS APS imagers from the characterization of test structures
HI Kwon, IM Kang, BG Park, JD Lee, SS Park
IEEE Transactions on Electron Devices 51 (2), 178-184, 2004
1312004
Multilevel vertical-channel SONOS nonvolatile memory on SOI
YK Lee, JS Sim, SK Sung, CJ Lee, TH Kim, JD Lee, BG Park, DH Lee, ...
IEEE Electron Device Letters 23 (11), 664-666, 2002
1242002
Design guideline of Si-based L-shaped tunneling field-effect transistors
SW Kim, WY Choi, MC Sun, HW Kim, BG Park
Japanese Journal of Applied Physics 51 (6S), 06FE09, 2012
1202012
Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices
M Sun, B Park
US Patent 8,481,392, 2013
1192013
Design optimization of gate-all-around (GAA) MOSFETs
JY Song, WY Choi, JH Park, JD Lee, BG Park
IEEE Transactions on Nanotechnology 5 (3), 186-191, 2006
1042006
Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly (vinyl alcohol) gate insulator
CA Lee, DW Park, SH Jin, IH Park, JD Lee, BG Park
Applied Physics Letters 88 (25), 252102, 2006
1032006
Semiconductor devices and methods of driving the same
JH Oh, KC Ryoo, B Park, K Oh, IG Baek
US Patent 8,472,237, 2013
1012013
Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors
S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang
IEEE transactions on electron devices 58 (12), 4164-4171, 2011
922011
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power …
S Kim, S Jung, MH Kim, S Cho, BG Park
Applied Physics Letters 106 (21), 212106, 2015
852015
Pentacene OTFTs with PVA gate insulators on a flexible substrate
SH Jin, JS Yu, CA Lee, JW Kim, BG Park, JD Lee
JOURNAL-KOREAN PHYSICAL SOCIETY 44, 181-184, 2004
852004
70-nm impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs)
WY Choi, JY Song, JD Lee, YJ Park, BG Park
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
832005
Semiconductor devices having vertical device and non-vertical device and methods of forming the same
M Sun, B Park
US Patent 9,087,922, 2015
822015
100-nm n-/p-channel I-MOS using a novel self-aligned structure
WY Choi, JY Song, JD Lee, YJ Park, BG Park
IEEE electron device letters 26 (4), 261-263, 2005
802005
Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at …
TH Kim, IH Park, JD Lee, HC Shin, BG Park
Applied physics letters 89 (6), 063508, 2006
732006
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