| Effect of SiN on performance and reliability of charge trap flash (CTF) under Fowler–Nordheim tunneling program/erase operation C Sandhya, U Ganguly, N Chattar, C Olsen, SM Seutter, L Date, R Hung, ... IEEE electron device letters 30 (2), 171-173, 2008 | 36 | 2008 |
| Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation C Sandhya, AB Oak, N Chattar, AS Joshi, U Ganguly, C Olsen, SM Seutter, ... IEEE transactions on electron devices 56 (12), 3123-3132, 2009 | 34 | 2009 |
| Device reliability metric for end-of-life performance optimization based on circuit level assessment A Kerber, P Srinivasan, S Cimino, P Paliwoda, S Chandrashekhar, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-3.1-2D-3.5, 2017 | 32 | 2017 |
| Lowering the reset current and power consumption of phase-change memories with carbon-doped Ge2Sb2Te5 Q Hubert, C Jahan, A Toffoli, G Navarro, S Chandrashekar, P Noe, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 32 | 2012 |
| Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications A Bastard, JC Bastien, B Hyot, S Lhostis, F Mompiou, C Bonafos, ... Applied physics letters 99 (24), 2011 | 29 | 2011 |
| Nitride engineering and the effect of interfaces on charge trap flash performance and reliability C Sandhya, U Ganguly, KK Singh, PK Singh, C Olsen, SM Seutter, ... 2008 IEEE International Reliability Physics Symposium, 406-411, 2008 | 24 | 2008 |
| The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash C Sandhya, U Ganguly, KK Singh, C Olsen, SM Seutter, G Conti, ... 2008 15th International Symposium on the Physical and Failure Analysis of …, 2008 | 13 | 2008 |
| Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption Q Hubert, C Jahan, A Toffoli, G Navarro, S Chandrashekar, P Noe, ... 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 12 | 2012 |
| Study of P/E cycling endurance induced degradation in SANOS memories under NAND (FN/FN) operation C Sandhya, AB Oak, N Chattar, U Ganguly, C Olsen, SM Seutter, L Date, ... IEEE Transactions on Electron Devices 57 (7), 1548-1558, 2010 | 11 | 2010 |
| Reliability of single and dual layer Pt nanocrystal devices for NAND flash applications: A 2-region model for endurance defect generation PK Singh, G Bisht, M Sivatheja, C Sandhya, G Mukhopadhyay, ... 2009 IEEE International Reliability Physics Symposium, 301-306, 2009 | 10 | 2009 |
| Radiation induced soft errors in 16 nm floating gate SLC NAND flash memory S Chandrashekhar, H Puchner, J Mitani, S Shinozaki, M Sardi, D Hoffman Microelectronics Reliability 108, 113631, 2020 | 6 | 2020 |
| No trouble found (NTF) customer return analysis T Tran, SR Gundala, K Soni, A Baker, A Fogle, S Chandrashekhar 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 4 | 2020 |
| Analysis of the effect of boron doping on GeTe phase change memories C Sandhya, A Bastard, L Perniola, JC Bastien, A Toffoli, E Henaff, A Roule, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 6C. 3.1-6C. 3.5, 2012 | 4 | 2012 |
| Impact of wafer thinning on High-K Metal Gate 20nm devices A Beece, R Agarwal, S Chandrashekhar, J Singh, S Siddhartha, R Alapati, ... 2013 IEEE 63rd Electronic Components and Technology Conference, 1892-1897, 2013 | 3 | 2013 |
| Recent advances in charge trap flash memories C Sandhya, PK Singh, S Gupta, H Rohra, M Shivatheja, U Ganguly, ... 2009 2nd International Workshop on Electron Devices and Semiconductor …, 2009 | 3 | 2009 |
| High speed Bias Temperature Instability measurements on 20 nm RMG HKMG MOSFETs N Chandra, S Chandrashekhar, R Francis, A Kerber, P Srinivasan, ... Solid-state electronics 101, 18-22, 2014 | 2 | 2014 |
| Applicability of dual layer metal nanocrystal flash memory for NAND 2 or 3-bit/cell operation: Understanding the anomalous breakdown and optimization of P/E conditions P Singh, C Sandhya, K Auluck, G Bisht, M Sivatheja, G Mukhopadhyay, ... 2010 IEEE International Reliability Physics Symposium, 981-987, 2010 | 1 | 2010 |
| Influence of SiN composition on program and erase characteristics of SANOS-type flash memories C Sandhya, U Ganguly, B Apoorva, C Olsen, S Seutter, L Date, R Hung, ... 2009 2nd International Workshop on Electron Devices and Semiconductor …, 2009 | 1 | 2009 |
| Transistor element including a buried insulating layer having enhanced functionality US Patent App. 15/622,497, 0 | 1* | |
| Multivariant Outlier Analysis for No Trouble Found (NTF) Customer Returns T Tran, S Gundala, CS Soni, Komal , Baker, Aaron, Fogle, Adam 16th IEEE Workshop on Silicon Errors in Logic – System Effects (SELSE 2020 …, 2020 | | 2020 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Adresse e-mail validée de ee.iitb.ac.in
