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Young Woo Ok
Young Woo Ok
Georgia Institute of Technology University Center of Excellence for Photovoltaics
Verified email at mail.gatech.edu
Title
Cited by
Cited by
Year
Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films
TY Kim, NM Park, KH Kim, GY Sung, YW Ok, TY Seong, CJ Choi
Applied Physics Letters 85 (22), 5355-5357, 2004
4022004
Growth and characterization of hypothetical zinc-blende ZnO films on GaAs (001) substrates with ZnS buffer layers
ABMA Ashrafi, A Ueta, A Avramescu, H Kumano, I Suemune, YW Ok, ...
Applied Physics Letters 76 (5), 550-552, 2000
3102000
High-throughput ion-implantation for low-cost high-efficiency silicon solar cells
A Rohatgi, DL Meier, B McPherson, YW Ok, AD Upadhyaya, JH Lai, ...
Energy Procedia 15, 10-19, 2012
1402012
Fabrication of ZnO quantum dots embedded in an amorphous oxide layer
KK Kim, N Koguchi, YW Ok, TY Seong, SJ Park
Applied Physics Letters 84 (19), 3810-3812, 2004
1382004
Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots
YT Moon, DJ Kim, JS Park, JT Oh, JM Lee, YW Ok, H Kim, SJ Park
Applied Physics Letters 79 (5), 599-601, 2001
982001
All solid-state rechargeable thin-film microsupercapacitor fabricated with tungsten cosputtered ruthenium oxide electrodes
HK Kim, SH Cho, YW Ok, TY Seong, YS Yoon
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
722003
Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots
IK Park, MK Kwon, SH Baek, YW Ok, TY Seong, SJ Park, YS Kim, ...
Applied Physics Letters 87 (6), 2005
692005
Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films
SJ Tark, YW Ok, MG Kang, HJ Lim, WM Kim, D Kim
Journal of electroceramics 23, 548-553, 2009
552009
Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells
K Ryu, A Upadhyaya, HJ Song, CJ Choi, A Rohatgi, YW Ok
Applied Physics Letters 101 (7), 2012
542012
Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells
YW Ok, AD Upadhyaya, Y Tao, F Zimbardi, K Ryu, MH Kang, A Rohatgi
Solar Energy Materials and Solar Cells 123, 92-96, 2014
532014
Passivated tunneling contacts to n-type wafer silicon and their implementation into high performance solar cells
P Stradins, S Essig, W Nemeth, BG Lee, D Young, A Norman, Y Liu, ...
National Renewable Energy Lab.(NREL), Golden, CO (United States), 2014
512014
26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiO x Passivating Contact …
A Rohatgi, K Zhu, J Tong, DH Kim, E Reichmanis, B Rounsaville, ...
IEEE Journal of Photovoltaics 10 (2), 417-422, 2020
492020
Effects of hydrogen implantation on the structural and electrical properties of nickel silicide
CJ Choi, YW Ok, SS Hullavarad, TY Seong, KM Lee, JH Lee, YJ Park
Journal of The Electrochemical Society 149 (9), G517, 2002
472002
N-type, ion-implanted silicon solar cells and modules
DL Meier, V Chandrasekaran, HP Davis, AM Payne, X Wang, V Yelundur, ...
IEEE Journal of Photovoltaics 1 (2), 123-129, 2011
462011
Effects of a SiO2 capping layer on the electrical properties and morphology of nickel silicides
CJ Choi, YW Ok, TY Seong, HD Lee
Japanese journal of applied physics 41 (4R), 1969, 2002
452002
Single-crystalline rocksalt CdO layers grown on GaAs (001) substrates by metalorganic molecular-beam epitaxy
ABMA Ashrafi, H Kumano, I Suemune, YW Ok, TY Seong
Applied Physics Letters 79 (4), 470-472, 2001
432001
Fabrication and modeling of high-efficiency front junction n-type silicon solar cells with tunnel oxide passivating back contact
A Rohatgi, B Rounsaville, YW Ok, AM Tam, F Zimbardi, AD Upadhyaya, ...
IEEE Journal of Photovoltaics 7 (5), 1236-1243, 2017
422017
Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs
DJ Kim, YT Moon, KM Song, CJ Choi, YW Ok, TY Seong, SJ Park
Journal of crystal growth 221 (1-4), 368-372, 2000
402000
Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem …
W Yoon, D Scheiman, YW Ok, Z Song, C Chen, G Jernigan, A Rohatgi, ...
Solar Energy Materials and Solar Cells 210, 110482, 2020
392020
Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm n-Type CZ Substrate
Y Tao, YW Ok, F Zimbardi, AD Upadhyaya, JH Lai, S Ning, ...
IEEE Journal of Photovoltaics 4 (1), 58-63, 2013
362013
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