| Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire A Bchetnia, A Touré, TA Lafford, Z Benzarti, I Halidou, MM Habchi, ... Journal of crystal growth 308 (2), 283-289, 2007 | 34 | 2007 |
| In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE A Rebey, MM Habchi, A Bchetnia, B El Jani Journal of crystal growth 261 (4), 450-457, 2004 | 31 | 2004 |
| Growth of vanadium-doped GaN by MOVPE M Souissi, A Bchetnia, B El Jani Journal of crystal growth 277 (1-4), 57-63, 2005 | 30 | 2005 |
| Optical and IR study of CdS nanoparticles dispersed in a new confined p-phenylenevinylene NBH Mohamed, M Haouari, N Jaballah, A Bchetnia, K Hriz, M Majdoub, ... Physica B: Condensed Matter 407 (18), 3849-3855, 2012 | 28 | 2012 |
| GaN thermal decomposition in N2 AP-MOCVD environment A Bchetnia, I Kemis, A Touré, W Fathallah, T Boufaden, B El Jani Semiconductor science and technology 23 (12), 125025, 2008 | 26 | 2008 |
| Growth of scandium doped GaN by MOVPE C Saidi, N Chaaben, A Bchetnia, A Fouzri, N Sakly, B El Jani Superlattices and Microstructures 60, 120-128, 2013 | 20 | 2013 |
| Experimental-structural study, Raman spectroscopy, UV‐visible, and impedance characterizations of Ba0. 97La0. 02Ti0. 9Nb0. 08O3 polycrystalline sample C Rayssi, M Jebli, J Dhahri, MB Henda, N Alotaibi, T Alshahrani, ... Journal of Molecular Structure 1249, 131539, 2022 | 19 | 2022 |
| Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures N Chaaben, J Laifi, H Bouazizi, C Saidi, A Bchetnia, B El Jani Materials Science in Semiconductor Processing 42, 359-363, 2016 | 18 | 2016 |
| Synthesis and thin films characterization of new anthracene-core molecules for opto-electronic applications RB Chaâbane, N Jaballah, M Benzarti-Ghédira, A Chaieb, M Majdoub, ... Physica B: Condensed Matter 404 (14-15), 1912-1916, 2009 | 18 | 2009 |
| Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy MM Habchi, A Rebey, A Fouzri, B El Jani Applied surface science 253 (1), 275-278, 2006 | 18 | 2006 |
| Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE M Bouzidi, Z Benzarti, I Halidou, Z Chine, A Bchetnia, B El Jani Superlattices and Microstructures 84, 13-23, 2015 | 17 | 2015 |
| Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree H Bouazizi, N Chaaben, Y El Gmili, A Bchetnia, JP Salvestrini, B El Jani Journal of Crystal Growth 434, 72-76, 2016 | 16 | 2016 |
| Characterizations of ZnO and Zn (1− x) CdxO thin films grown on Zn-and O-face ZnO substrates by metal organic chemical vapor deposition MA Boukadhaba, A Fouzri, C Saidi, N Sakly, A Souissi, A Bchetnia, ... Journal of crystal growth 395, 14-21, 2014 | 16 | 2014 |
| Photoluminescence of V-doped GaN thin films grown by MOVPE technique M Souissi, Z Chine, A Bchetnia, H Touati, B El Jani Microelectronics journal 37 (1), 1-4, 2006 | 16 | 2006 |
| Diffusion of vanadium in GaAs A Bchetnia, M Souissi, A Rebey, B El Jani Journal of crystal growth 270 (3-4), 376-379, 2004 | 16 | 2004 |
| Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric‐pressure MOVPE A Touré, I Halidou, Z Benzarti, A Fouzri, A Bchetnia, B El Jani physica status solidi (a) 209 (5), 977-983, 2012 | 15 | 2012 |
| Structural, morphological and optical properties of Cd doped ZnO film grown on a-and r-plane sapphire substrate by MOCVD A Fouzri, MA Boukadhaba, A Touré, N Sakly, A Bchetnia, V Sallet Applied surface science 311, 648-658, 2014 | 13 | 2014 |
| New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy A Rebey, A Bchetnia, C Benjeddou, B El Jani, P Gibart Journal of crystal growth 194 (3-4), 292-296, 1998 | 13 | 1998 |
| Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE J Laifi, N Chaaben, H Bouazizi, N Fourati, C Zerrouki, Y El Gmili, ... Superlattices and Microstructures 94, 30-38, 2016 | 12 | 2016 |
| Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry A Bchetnia, C Saidi, M Souissi, T Boufaden, B El Jani Semiconductor science and technology 24 (9), 095020, 2009 | 12 | 2009 |
Ahmed RebeyQassim University, University of Monastir, Faculty of Sciences of Monastir-5019. TunisiaAdresse e-mail validée de qu.edu.sa
