Suivre
Boussairi Bouzazi
Boussairi Bouzazi
Institute of Technological Innovation, University of Sherbrooke
Adresse e-mail validée de usherbrooke.ca
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Five-volt vertically-stacked, single-cell GaAs photonic power converter
CE Valdivia, MM Wilkins, B Bouzazi, A Jaouad, V Aimez, R Arès, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015
452015
Properties of Chemical Beam Epitaxy grown GaAs0. 995N0. 005 homo-junction solar cell
B Bouzazi, K Nishimura, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Current Applied Physics 10 (2), S188-S190, 2010
232010
Double carriers pulse DLTS for the characterization of electron–hole recombination process in GaAsN grown by chemical beam epitaxy
B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Physica B: Condensed Matter 406 (5), 1070-1075, 2011
212011
Simulation of a through cell via contacts architecture for HCPV multi-junction solar cells
O Richard, A Jaouad, B Bouzazi, R Arès, S Fafard, V Aimez
Solar Energy Materials and Solar Cells 144, 173-180, 2016
202016
Origin investigation of a nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy
B Bouzazi, JH Lee, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 50 (5R), 051001, 2011
192011
Nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy
B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 49 (5R), 051001, 2010
172010
Nitrogen related electron trap with high capture cross section in n-type GaAsN grown by chemical beam epitaxy
B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Applied physics express 3 (5), 051002, 2010
172010
Thin n/p GaAs junctions for novel high-efficiency phototransducers based on a vertical epitaxial heterostructure architecture
MCA York, F Proulx, DP Masson, A Jaouad, B Bouzazi, R Arès, V Aimez, ...
Mrs Advances 1 (14), 881-890, 2016
152016
Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy
B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
Journal of alloys and compounds 552, 469-474, 2013
152013
Impact of via hole integration on multijunction solar cells for through cell via contacts and associated passivation treatment
M de Lafontaine, M Darnon, C Colin, B Bouzazi, M Volatier, R Ares, ...
IEEE Journal of Photovoltaics 7 (5), 1456-1461, 2017
142017
Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent
S Fafard, F Proulx, MCA York, M Wilkins, CE Valdivia, M Bajcsy, D Ban, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016
142016
Properties of a nitrogen-related hole trap acceptor-like state in p-type GaAsN grown by chemical beam epitaxy
B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 49 (12R), 121001, 2010
142010
Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy
B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
Current applied physics 13 (7), 1269-1274, 2013
102013
Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic gaas n/p junctions
MCA York, F Proulx, DP Masson, A Jaouad, B Bouzazi, R Arès, V Aimez, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016
92016
Plasma etching applications in concentrated photovoltaic cell fabrication
M de Lafontaine, M Darnon, A Jaouad, P Albert, B Bouzazi, C Colin, ...
AIP Conference Proceedings 1766 (1), 2016
82016
Analysis of current transport mechanisms in GaAsN homojunction solar cell grown by chemical beam epitaxy
B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-7, 2012
82012
III-VN materials for super high-efficiency multijunction solar cells
M Yamaguchi, B Bouzazi, H Suzuki, K Ikeda, N Kojima, Y Ohshita
AIP Conference Proceedings 1477 (1), 24-27, 2012
72012
Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 51 (2S), 02BP02, 2012
72012
Design of thin InGaAsN(Sb) junctions for use in four-junction concentrating photovoltaic devices
MM Wilkins, J Gupta, A Jaouad, B Bouzazi, S Fafard, A Boucherif, ...
Journal of Photonics for Energy 7 (2), 022502-022502, 2017
52017
Design optimizations of InGaAsN (Sb) subcells for concentrator photovoltaic systems
R Cheriton, MM Wilkins, P Sharma, CE Valdivia, AH Trojnar, H Schriemer, ...
Journal of Vacuum Science & Technology B 34 (2), 2016
52016
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