Phase change memory technology GW Burr, MJ Breitwisch, M Franceschini, D Garetto, K Gopalakrishnan, ... Journal of Vacuum Science & Technology B 28 (2), 223-262, 2010 | 1232 | 2010 |
Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model D Garetto, YM Randriamihaja, A Zaka, D Rideau, A Schmid, H Jaouen, ... Solid-State Electronics 71, 74-79, 2012 | 23 | 2012 |
On the accuracy of current TCAD hot carrier injection models in nanoscale devices A Zaka, Q Rafhay, M Iellina, P Palestri, R Clerc, D Rideau, D Garetto, ... Solid-state electronics 54 (12), 1669-1674, 2010 | 23 | 2010 |
J Vac Sci Technol GW Burr, MJ Breitwisch, M Franceschini, D Garetto, K Gopalakrishnan, ... B: Microelectron Nanometer Struct–Process, Meas, Phenom 28 (2), 223-262, 2010 | 17 | 2010 |
Modeling stressed MOS oxides using a multiphonon-assisted quantum approach—Part II: transient effects D Garetto, YM Randriamihaja, D Rideau, A Zaka, A Schmid, Y Leblebici, ... IEEE transactions on electron devices 59 (3), 621-630, 2012 | 13 | 2012 |
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives D Rideau, YM Niquet, O Nier, A Cros, JP Manceau, P Palestri, D Esseni, ... 2013 IEEE International Electron Devices Meeting, 12.5. 1-12.5. 4, 2013 | 10 | 2013 |
Structure and method for narrowing voltage threshold distribution in non-volatile memories PR Tannhof, E Dornel, D Garetto US Patent 8,988,940, 2015 | 9 | 2015 |
Advanced physics for simulation of ultrascaled devices with UTOXPP solver D Garetto, D Rideau, C Tavernier, A Schmid, Y Leblebici, H Jaouen Proceedings of the 14th International Nanotech Conference 2, 607 - 610, 2011 | 9 | 2011 |
Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model D Garetto, YM Randriamihaja, D Rideau, E Dornel, FC William, A Schmid, ... 2010 14th International Workshop on Computational Electronics, 1-4, 2010 | 8 | 2010 |
Modeling stressed MOS oxides using a multiphonon-assisted quantum approach—Part I: Impedance analysis D Garetto, YM Randriamihaja, D Rideau, A Zaka, A Schmid, Y Leblebici, ... IEEE transactions on electron devices 59 (3), 610-620, 2012 | 7 | 2012 |
AC analysis of defect cross sections using non-radiative MPA quantum model D Garetto, YM Randriamihaja, A Zaka, D Rideau, A Schmid, H Jaouem, ... Ulis 2011 Ultimate Integration on Silicon, 1-4, 2011 | 7 | 2011 |
Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model D Rideau, V Quenette, D Garetto, E Dornel, M Weybright, JP Manceau, ... 2010 International Conference on Microelectronic Test Structures (ICMTS …, 2010 | 7 | 2010 |
Modeling study of capacitance characteristics in strained High-K Metal gate technology: impact of Si/SiO2/HK interfacial layer and band structure model D Garetto, D Rideau, E Dornel, WF Clark, C Tavernier, Y Leblebici, ... 13th International Nanotech Conference and Expo 2010, 2010 | 7 | 2010 |
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region FG Pereira, D Rideau, O Nier, C Tavernier, F Triozon, D Garetto, G Mugny, ... EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 6 | 2015 |
New insights into gate-dielectric breakdown by electrical characterization of interfacial and oxide defects with reverse modeling methodology YM Randriamihaja, D Garetto, V Huard, D Rideau, D Roy, M Rafik, ... 2012 IEEE International Reliability Physics Symposium (IRPS), GD. 7.1-GD. 7.5, 2012 | 6 | 2012 |
Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects A Zaka, J Singer, E Dornel, D Garetto, D Rideau, Q Rafhay, R Clerc, ... Solid-state electronics 63 (1), 158-162, 2011 | 6 | 2011 |
Full-zone k· p parametrization for III-As materials G Mugny, D Rideau, F Triozon, YM Niquet, C Kriso, FG Pereira, D Garetto, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 4 | 2015 |
Mobility in FDSOI devices: Monte Carlo and Kubo Greenwood approaches compared to NEGF simulations D Rideau, YM Niquet, O Nier, P Palestri, D Esseni, VH Nguyen, F Triozon, ... na, 2012 | 4 | 2012 |
Characterization and physical modeling of endurance in embedded non-volatile memory technology D Garetto, A Zaka, JP Manceau, D Rideau, E Dornel, WF Clark, A Schmid, ... 2011 3rd IEEE International Memory Workshop (IMW), 1-4, 2011 | 4 | 2011 |
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD G Mugny, FG Pereira, D Rideau, F Triozon, YM Niquet, M Pala, D Garetto, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 424-427, 2016 | 3 | 2016 |