Modelling of parasitic effects induced by electrically active defects in a SiGe HBT M Lakhdara, S Latreche, C Gontrand The European Physical Journal Applied Physics 43 (1), 55-63, 2008 | 6 | 2008 |
Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications M Lakhdara, S Latreche, C Gontrand Journal of Computational and Applied Mathematics 259, 925-936, 2014 | 5 | 2014 |
First-and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors JC Nunez-Perez, M Lakhdara, M Bouhouche, J Verdier, S Latreche, ... Semiconductor science and Technology 24 (4), 045010, 2009 | 5 | 2009 |
Influence of the position of electrically active defects on the characteristics of an SiGe HBT M Lakhdara, S Latreche, F Miller, C Gontrand Proceedings. The 16th International Conference on Microelectronics, 2004 …, 2004 | 3 | 2004 |
Modélisation bidimensionnelle de transistors bipolaires à heterojonctions à base Si1-x Gex intégrés en technologie Cmos M Lakhdara | 3 | |
Numerical modelling and optimization of SiGeC HBT for 0.13 µm BiCMOS technology M Lakhdara, S Latreche, C Gontrand 2009 International Conference on Electrical and Electronics Engineering …, 2009 | 2 | 2009 |
Optimization of Abrupt Profile of Germanium in Si/SiGe Heterojunction Bipolar Transistor Specified for Radio Frequency Range Systems M Lakhdara, S Latreche, C Gontrand Applied Mechanics and Materials 492, 316-320, 2014 | 1 | 2014 |
Etude de composants semiconducteurs réalisés en technologieCMOS dédiés à la radio fréquence M Lakhdara | 1 | 2009 |
Carbon Effect on Electrical Characteristics of High Speed SiGeC HBT M LAKHDARA, S LATRECHE, JCN Perez, M Bouhouche, J Verdier, ... for E-MRS Spring Meeting Strasbourg (France) Symposium I Chapitre IV Limites …, 0 | 1 | |
Improvement of the Self-Heating Performance of an Advanced SiGe HBT Transistor Through the Peltier Effect A Boulgheb, M Lakhdara, S Latreche IEEE Transactions on Electron Devices 68 (2), 479-484, 2021 | | 2021 |
Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor N Kherief, S Latreche, M Lakhdara, A Boulgheb, C Gontrand Sumy State University, 2021 | | 2021 |
TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC A Boughedda, M Lakhdara, S Latreche, R Mendicino, GF Dalla Betta Journal of Physics: Conference Series 1766 (1), 012014, 2021 | | 2021 |
Compact border termination for active-edge planar radiation detectors with enhanced breakdown voltage A Boughedda, M Lakhdara, S Latreche, GF Dalla Betta Micro & Nano Letters 15 (13), 969-971, 2020 | | 2020 |
Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium A Boulgheb, M Lakhdara, N Kherief, S Latreche Sumy State University, 2020 | | 2020 |
Two-dimensional numerical modeling of sub micrometer SiGe HBT transistors S Latreche, N Kherief, M Lakhdara 2018 5th International Conference on Electrical and Electronic Engineering …, 2018 | | 2018 |
Static Performance of SiGe HBTs at Low Temperature M Lakhdara, S Latreche, C Gontrand Applied Mechanics and Materials 666, 59-63, 2014 | | 2014 |
Mathematical approach and Optimization of Nanometric Base Thickness for an SiGeC HBT Dedicated to the Radiofrequency M Lakhdara, S LATRECHE, MR BEGHOUL, C GONTRAND International Conference on Applied and Computational Mathematics, 2012 | | 2012 |
Mathematical approach and Optimization of Nanometric Base Thickness for an HBT Dedicated to Radiofrequency applications. M LAKHDARA, S LATRECHE, MR BEGHOUL, C GONTRAND | | |