MAYA LAKHDARA
MAYA LAKHDARA
MCA
Adresse e-mail validée de umc.edu.dz - Page d'accueil
Titre
Citée par
Citée par
Année
First-and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors
JC Nunez-Perez, M Lakhdara, M Bouhouche, J Verdier, S Latreche, ...
Semiconductor science and Technology 24 (4), 045010, 2009
62009
Modelling of parasitic effects induced by electrically active defects in a SiGe HBT
M Lakhdara, S Latreche, C Gontrand
The European Physical Journal-Applied Physics 43 (1), 55-63, 2008
62008
Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications
M Lakhdara, S Latreche, C Gontrand
Journal of Computational and Applied Mathematics 259, 925-936, 2014
52014
Influence of the position of electrically active defects on the characteristics of an SiGe HBT
M Lakhdara, S Latreche, F Miller, C Gontrand
Proceedings. The 16th International Conference on Microelectronics, 2004 …, 2004
32004
Modélisation bidimensionnelle de transistors bipolaires à heterojonctions à base Si1-x Gex intégrés en technologie Cmos
M Lakhdara
3
Numerical modelling and optimization of SiGeC HBT for 0.13 µm BiCMOS technology
M Lakhdara, S Latreche, C Gontrand
2009 International Conference on Electrical and Electronics Engineering …, 2009
22009
Two-dimensional numerical modeling of sub micrometer SiGe HBT transistors
S Latreche, N Kherief, M Lakhdara
2018 5th International Conference on Electrical and Electronic Engineering …, 2018
12018
Optimization of abrupt profile of germanium in Si/SiGe heterojunction bipolar transistor specified for radio frequency range systems
M Lakhdara, S Latreche, C Gontrand
Applied Mechanics and Materials 492, 316-320, 2014
12014
Etude de composants semiconducteurs réalisés en technologieCMOS dédiés à la radio fréquence
M Lakhdara
12009
Carbon Effect on Electrical Characteristics of High Speed SiGeC HBT
M LAKHDARA, S LATRECHE, JCN Perez, M Bouhouche, J Verdier, ...
for E-MRS Spring Meeting Strasbourg (France) Symposium I Chapitre IV Limites …, 0
1
Improvement of the Self-Heating Performance of an Advanced SiGe HBT Transistor Through the Peltier Effect
A Boulgheb, M Lakhdara, S Latreche
IEEE Transactions on Electron Devices 68 (2), 479-484, 2021
2021
Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor
N Kherief, S Latreche, M Lakhdara, A Boulgheb, C Gontrand
Sumy State University, 2021
2021
TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC
A Boughedda, M Lakhdara, S Latreche, R Mendicino, GF Dalla Betta
Journal of Physics: Conference Series 1766 (1), 012014, 2021
2021
Compact border termination for active-edge planar radiation detectors with enhanced breakdown voltage
A Boughedda, M Lakhdara, S Latreche, GF Dalla Betta
Micro & Nano Letters 15 (13), 969-971, 2020
2020
Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium
A Boulgheb, M Lakhdara, N Kherief, S Latreche
Sumy State University, 2020
2020
Static Performance of SiGe HBTs at Low Temperature
M Lakhdara, S Latreche, C Gontrand
Applied Mechanics and Materials 666, 59-63, 2014
2014
Mathematical approach and Optimization of Nanometric Base Thickness for an HBT Dedicated to Radiofrequency applications.
M LAKHDARA, S LATRECHE, MR BEGHOUL, C GONTRAND
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–17