| First-and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors JC Nunez-Perez, M Lakhdara, M Bouhouche, J Verdier, S Latreche, ... Semiconductor science and Technology 24 (4), 045010, 2009 | 6 | 2009 |
| Modelling of parasitic effects induced by electrically active defects in a SiGe HBT M Lakhdara, S Latreche, C Gontrand The European Physical Journal-Applied Physics 43 (1), 55-63, 2008 | 6 | 2008 |
| Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications M Lakhdara, S Latreche, C Gontrand Journal of Computational and Applied Mathematics 259, 925-936, 2014 | 5 | 2014 |
| Influence of the position of electrically active defects on the characteristics of an SiGe HBT M Lakhdara, S Latreche, F Miller, C Gontrand Proceedings. The 16th International Conference on Microelectronics, 2004 …, 2004 | 3 | 2004 |
| Modélisation bidimensionnelle de transistors bipolaires à heterojonctions à base Si1-x Gex intégrés en technologie Cmos M Lakhdara | 3 | |
| Numerical modelling and optimization of SiGeC HBT for 0.13 µm BiCMOS technology M Lakhdara, S Latreche, C Gontrand 2009 International Conference on Electrical and Electronics Engineering …, 2009 | 2 | 2009 |
| Two-dimensional numerical modeling of sub micrometer SiGe HBT transistors S Latreche, N Kherief, M Lakhdara 2018 5th International Conference on Electrical and Electronic Engineering …, 2018 | 1 | 2018 |
| Optimization of abrupt profile of germanium in Si/SiGe heterojunction bipolar transistor specified for radio frequency range systems M Lakhdara, S Latreche, C Gontrand Applied Mechanics and Materials 492, 316-320, 2014 | 1 | 2014 |
| Etude de composants semiconducteurs réalisés en technologieCMOS dédiés à la radio fréquence M Lakhdara | 1 | 2009 |
| Carbon Effect on Electrical Characteristics of High Speed SiGeC HBT M LAKHDARA, S LATRECHE, JCN Perez, M Bouhouche, J Verdier, ... for E-MRS Spring Meeting Strasbourg (France) Symposium I Chapitre IV Limites …, 0 | 1 | |
| Improvement of the Self-Heating Performance of an Advanced SiGe HBT Transistor Through the Peltier Effect A Boulgheb, M Lakhdara, S Latreche IEEE Transactions on Electron Devices 68 (2), 479-484, 2021 | | 2021 |
| Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor N Kherief, S Latreche, M Lakhdara, A Boulgheb, C Gontrand Sumy State University, 2021 | | 2021 |
| TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC A Boughedda, M Lakhdara, S Latreche, R Mendicino, GF Dalla Betta Journal of Physics: Conference Series 1766 (1), 012014, 2021 | | 2021 |
| Compact border termination for active-edge planar radiation detectors with enhanced breakdown voltage A Boughedda, M Lakhdara, S Latreche, GF Dalla Betta Micro & Nano Letters 15 (13), 969-971, 2020 | | 2020 |
| Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium A Boulgheb, M Lakhdara, N Kherief, S Latreche Sumy State University, 2020 | | 2020 |
| Static Performance of SiGe HBTs at Low Temperature M Lakhdara, S Latreche, C Gontrand Applied Mechanics and Materials 666, 59-63, 2014 | | 2014 |
| Mathematical approach and Optimization of Nanometric Base Thickness for an HBT Dedicated to Radiofrequency applications. M LAKHDARA, S LATRECHE, MR BEGHOUL, C GONTRAND | | |
