| Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications M Lakhdara, S Latreche, C Gontrand Journal of computational and applied mathematics 259, 925-936, 2014 | 8 | 2014 |
| First-and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors JC Nunez-Perez, M Lakhdara, M Bouhouche, J Verdier, S Latreche, ... Semiconductor science and Technology 24 (4), 045010, 2009 | 7 | 2009 |
| Improvement of the self-heating performance of an advanced SiGe HBT transistor through the Peltier effect A Boulgheb, M Lakhdara, S Latreche IEEE Transactions On Electron Devices 68 (2), 479-484, 2021 | 6 | 2021 |
| Modelling of parasitic effects induced by electrically active defects in a SiGe HBT M Lakhdara, S Latreche, C Gontrand The European Physical Journal-Applied Physics 43 (1), 55-63, 2008 | 6 | 2008 |
| Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors A Boughedda, M Lakhdara, S Latreche, R Mendicino, GF Dalla Betta Journal of Instrumentation 16 (10), C10006, 2021 | 4 | 2021 |
| Compact border termination for active‐edge planar radiation detectors with enhanced breakdown voltage A Boughedda, M Lakhdara, S Latreche, GF Dalla Betta Micro & Nano Letters 15 (13), 969-971, 2020 | 4 | 2020 |
| Etude de composants Semi-conducteurs réalisés en technologie CMOS dédiés à la radio fréquence M Lakhdara Mentouri University,, 2009 | 4 | 2009 |
| TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC A Boughedda, M Lakhdara, S Latreche, R Mendicino, GF Dalla Betta Journal of Physics: Conference Series 1766 (1), 012014, 2021 | 3 | 2021 |
| Modeling and Numerical Simulation of a very High Speed SiGe HBT at High Temperature M Lakhdara, S Latreche Nanoscience and Nanotechnology 6 (1A), 92-96, 2016 | 3 | 2016 |
| Influence of the position of electrically active defects on the characteristics of an SiGe HBT M Lakhdara, S Latreche, F Miller, C Gontrand Proceedings. The 16th International Conference on Microelectronics, 2004 …, 2004 | 3 | 2004 |
| Numerical modelling and optimization of SiGeC HBT for 0.13 µm BiCMOS technology M Lakhdara, S Latreche, C Gontrand 2009 International Conference on Electrical and Electronics Engineering …, 2009 | 2 | 2009 |
| Carbon Effect on Electrical Characteristics of High Speed SiGeC HBT M Lakhdara, S Latreche, JCN Perez, M Bouhouche, J Verdier, ... for E-MRS Spring Meeting Strasbourg (France) Symposium I Chapitre IV Limites …, 0 | 2 | |
| Modélisation bidimensionnelle de transistors bipolaires à heterojonctions à base Si1-x Gex intégrés en technologie Cmos M Lakhdara, S Latreche | 2 | |
| Two-dimensional numerical modeling of sub micrometer SiGe HBT transistors S Latreche, N Kherief, M Lakhdara 2018 5th International Conference on Electrical and Electronic Engineering …, 2018 | 1 | 2018 |
| Optimization of abrupt profile of germanium in Si/SiGe heterojunction bipolar transistor specified for radio frequency range systems M Lakhdara, S Latreche, C Gontrand Applied Mechanics and Materials 492, 316-320, 2014 | 1 | 2014 |
| Optimisation of extrinsic base doping of a SiGe heterojunction bipolar transistor integrated in a BiCMOS 55 nm technology for high frequency performances CG Lachkhab, M Lakhdara, A Boulgheb, S Latreche International Journal of Nanotechnology 20 (11-12), 1017-1026, 2023 | | 2023 |
| A Modified 3D-Trench Pixel Detector: Proof of Concept by TCAD Simulations A Boughedda, S Latreche, M Lakhdara, GF Dalla Betta Frontiers in Physics 10, 957089, 2022 | | 2022 |
| The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors A Boulgheb, M Lakhdara, S Latreche Russian Microelectronics 51 (3), 192-198, 2022 | | 2022 |
| Silicon radiation detectors in 3D technology at high speed and low energy consumption. A Boughedda, M Lakhdara, GF Dalla Betta Université Frères Mentouri-Constantine 1, 2021 | | 2021 |
| COMSOL simulation of a new generation of SiGe heterojunction bipolar transistor (HBT) integrated in a BiCMOS 55nm technology CEG Lachkhab, M Lakhdara, A Boulgheb, S Latreche AIP Conference Proceedings 2372 (1), 2021 | | 2021 |
