Maxime Darnon
Maxime Darnon
CNRS-LN2
Adresse e-mail validée de usherbrooke.ca
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Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Agarwal, G Cunge, M Darnon, E Pargon, O Joubert
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (4 …, 2012
1512012
Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas
N Posseme, T Chevolleau, T David, M Darnon, O Louveau, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
992007
Method for air gap interconnect integration using photo-patternable low k material
LA Clevenger, M Darnon, Q Lin, AD Lisi, SV Nitta
US Patent 8,241,992, 2012
902012
Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier, E Pargon, G Cunge, F Boulard, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
632010
Undulation of sub- porous dielectric structures: A mechanical analysis
M Darnon, T Chevolleau, O Joubert, S Maitrejean, JC Barbe, J Torres
Applied Physics Letters 91 (19), 194103, 2007
552007
Toward successful integration of porous low-k materials: Strategies addressing plasma damage
K Lionti, W Volksen, T Magbitang, M Darnon, G Dubois
ECS Journal of Solid State Science and Technology 4 (1), N3071, 2014
452014
Etching characteristics of TiN used as hard mask in dielectric etch process
M Darnon, T Chevolleau, D Eon, L Vallier, J Torres, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
442006
Evolution of bulk c-Si properties during the processing of GaP/c-Si heterojunction cell
R Varache, M Darnon, M Descazeaux, M Martin, T Baron, D Muñoz
Energy Procedia 77, 493-499, 2015
382015
Patterning of narrow porous SiOCH trenches using a TiN hard mask
M Darnon, T Chevolleau, D Eon, R Bouyssou, B Pelissier, L Vallier, ...
Microelectronic engineering 85 (11), 2226-2235, 2008
382008
Method of patterning of magnetic tunnel junctions
O Joubert, B Schwarz, JGM Pereira, K Menguelti, EM Pargon, M Darnon
US Patent 8,546,263, 2013
352013
Towards a controlled patterning of 10 nm silicon gates in high density plasmas
E Pargon, M Darnon, O Joubert, T Chevolleau, L Vallier, L Mollard, T Lill
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
312005
Impact of low-k structure and porosity on etch processes
M Darnon, N Casiez, T Chevolleau, G Dubois, W Volksen, TJ Frot, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
292013
Roughening of porous SiCOH materials in fluorocarbon plasmas
F Bailly, T David, T Chevolleau, M Darnon, N Posseme, R Bouyssou, ...
Journal of Applied Physics 108 (1), 014906, 2010
292010
Methods for fabrication of an air gap-containing interconnect structure
LA Clevenger, M Darnon, SV Nitta, AD Lisi, Q Lin
US Patent 8,642,252, 2014
262014
Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmas
M Brihoum, G Cunge, M Darnon, D Gahan, O Joubert, NSJ Braithwaite
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (2 …, 2013
262013
Silicon recess minimization during gate patterning using synchronous plasma pulsing
C Petit-Etienne, E Pargon, S David, M Darnon, L Vallier, O Joubert, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
262012
Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials
M Darnon, T Chevolleau, T David, N Posseme, J Ducote, C Licitra, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
252008
Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH
N Posseme, T Chevolleau, T David, M Darnon, JP Barnes, O Louveau, ...
Microelectronic engineering 85 (8), 1842-1849, 2008
252008
Time-resolved ion flux, electron temperature and plasma density measurements in a pulsed Ar plasma using a capacitively coupled planar probe
M Darnon, G Cunge, NSJ Braithwaite
Plasma Sources Science and Technology 23 (2), 025002, 2014
232014
Structures and methods for air gap integration
LA Clevenger, M Darnon, Q Lin, AD Lisi, SV Nitta
US Patent 8,896,120, 2014
212014
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