Method for air gap interconnect integration using photo-patternable low k material LA Clevenger, M Darnon, Q Lin, AD Lisi, SV Nitta
US Patent 8,241,992, 2012
241 2012 Pulsed high-density plasmas for advanced dry etching processes S Banna, A Agarwal, G Cunge, M Darnon, E Pargon, O Joubert
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (4 …, 2012
178 2012 Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas N Posseme, T Chevolleau, T David, M Darnon, O Louveau, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
104 2007 Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing C Petit-Etienne, M Darnon, L Vallier, E Pargon, G Cunge, F Boulard, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
73 2010 Undulation of sub- M Darnon, T Chevolleau, O Joubert, S Maitrejean, JC Barbe, J Torres
Applied Physics Letters 91 (19), 194103, 2007
60 2007 Toward successful integration of porous low-k materials: Strategies addressing plasma damage K Lionti, W Volksen, T Magbitang, M Darnon, G Dubois
ECS Journal of Solid State Science and Technology 4 (1), N3071, 2014
52 2014 Evolution of bulk c-Si properties during the processing of GaP/c-Si heterojunction cell R Varache, M Darnon, M Descazeaux, M Martin, T Baron, D Muñoz
Energy Procedia 77, 493-499, 2015
46 2015 Etching characteristics of TiN used as hard mask in dielectric etch process M Darnon, T Chevolleau, D Eon, L Vallier, J Torres, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
46 2006 Patterning of narrow porous SiOCH trenches using a TiN hard mask M Darnon, T Chevolleau, D Eon, R Bouyssou, B Pelissier, L Vallier, ...
Microelectronic engineering 85 (11), 2226-2235, 2008
41 2008 Method of patterning of magnetic tunnel junctions O Joubert, B Schwarz, JGM Pereira, K Menguelti, EM Pargon, M Darnon
US Patent 8,546,263, 2013
40 2013 Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmas M Brihoum, G Cunge, M Darnon, D Gahan, O Joubert, NSJ Braithwaite
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (2 …, 2013
32 2013 Towards a controlled patterning of 10 nm silicon gates in high density plasmas E Pargon, M Darnon, O Joubert, T Chevolleau, L Vallier, L Mollard, T Lill
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
32 2005 Impact of low-k structure and porosity on etch processes M Darnon, N Casiez, T Chevolleau, G Dubois, W Volksen, TJ Frot, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
31 2013 Methods for fabrication of an air gap-containing interconnect structure LA Clevenger, M Darnon, SV Nitta, AD Lisi, Q Lin
US Patent 8,642,252, 2014
29 2014 Roughening of porous SiCOH materials in fluorocarbon plasmas F Bailly, T David, T Chevolleau, M Darnon, N Posseme, R Bouyssou, ...
Journal of Applied Physics 108 (1), 014906, 2010
28 2010 Time-resolved ion flux, electron temperature and plasma density measurements in a pulsed Ar plasma using a capacitively coupled planar probe M Darnon, G Cunge, NSJ Braithwaite
Plasma Sources Science and Technology 23 (2), 025002, 2014
27 2014 Interconnect structure fabricated without dry plasma etch processing M Darnon, JP Gambino, EE Huang, Q Lin
US Patent 8,298,937, 2012
27 2012 Silicon recess minimization during gate patterning using synchronous plasma pulsing C Petit-Etienne, E Pargon, S David, M Darnon, L Vallier, O Joubert, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
27 2012 Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials M Darnon, T Chevolleau, T David, N Posseme, J Ducote, C Licitra, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
26 2008 Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH N Posseme, T Chevolleau, T David, M Darnon, JP Barnes, O Louveau, ...
Microelectronic engineering 85 (8), 1842-1849, 2008
24 2008 