Tiancong Zhu
Tiancong Zhu
University of California, Berkeley, Lawrance Berkeley National Lab
Adresse e-mail validée de berkeley.edu
Citée par
Citée par
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit
DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ...
Nano letters 18 (5), 3125-3131, 2018
Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
YK Luo, J Xu, T Zhu, G Wu, EJ McCormick, W Zhan, MR Neupane, ...
Nano letters 17 (6), 3877-3883, 2017
Strong modulation of spin currents in bilayer graphene by static and fluctuating proximity exchange fields
S Singh, J Katoch, T Zhu, KY Meng, T Liu, JT Brangham, F Yang, ...
Physical Review Letters 118 (18), 187201, 2017
Experimental Demonstration of xor Operation in Graphene Magnetologic Gates at Room Temperature
H Wen, H Dery, W Amamou, T Zhu, Z Lin, J Shi, I Žutić, I Krivorotov, ...
Physical Review Applied 5 (4), 044003, 2016
Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
S Singh, J Katoch, J Xu, C Tan, T Zhu, W Amamou, J Hone, R Kawakami
Applied Physics Letters 109 (12), 122411, 2016
Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
J Xu, S Singh, J Katoch, G Wu, T Zhu, I Zutic, RK Kawakami
Nature Communications 9, 2869, 2018
Strong and Tunable Spin Lifetime Anisotropy in Dual-Gated Bilayer Graphene
J Xu, T Zhu, YK Luo, YM Lu, RK Kawakami
Physical Review Letters 121 (12), 127703, 2018
Strontium oxide tunnel barriers for high quality spin transport and large spin accumulation in graphene
S Singh, J Katoch, T Zhu, RJ Wu, AS Ahmed, W Amamou, D Wang, ...
Nano letters 17 (12), 7578-7585, 2017
Modeling the oblique spin precession in lateral spin valves for accurate determination of the spin lifetime anisotropy: Effect of finite contact resistance and channel length
T Zhu, RK Kawakami
Physical Review B 97 (14), 144413, 2018
Importance of Paramagnetic Background Subtraction for Determining the Magnetic Moment in Epitaxially Grown Ultrathin van der Waals Magnets
DJ O'Hara, T Zhu, RK Kawakami
IEEE Magnetics Letters 9, 1-5, 2018
Probing Tunneling Spin Injection into Graphene via Bias Dependence
T Zhu, S Singh, J Katoch, H Wen, K Belashchenko, I Žutić, RK Kawakami
Physical Review B 98, 054412, 2018
Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides
AS Ahmed, H Wen, T Ohta, IV Pinchuk, T Zhu, T Beechem, RK Kawakami
Journal of Crystal Growth 447, 5-12, 2016
Transport Spectroscopy of Sublattice-Resolved Resonant Scattering in Hydrogen-Doped Bilayer Graphene
J Katoch, T Zhu, D Kochan, S Singh, J Fabian, RK Kawakami
Physical Review Letters 121 (13), 136801, 2018
Current-based detection of nonlocal spin transport in graphene for spin-based logic applications
H Wen, T Zhu, Y Luo, W Amamou, RK Kawakami
Journal of Applied Physics 115 (17), 17B741, 2014
Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping
M Yang, J Shi, M Zhang, S Zhang, Z Bao, S Luo, TC Zhou, T Zhu, X Li, J Li
Materials Chemistry and Physics 138 (1), 225-229, 2013
Chemical migration and dipole formation at van der Waals interfaces between magnetic transition metal chalcogenides and topological insulators
BA Noesges, T Zhu, JJ Repicky, S Yu, F Yang, JA Gupta, RK Kawakami, ...
Physical Review Materials 4 (5), 054001, 2020
Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBiSe
T Zhu, AJ Bishop, T Zhou, M Zhu, DJ O'Hara, AA Baker, S Cheng, ...
arXiv preprint arXiv:2003.07938, 2020
Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy
IV Pinchuk, TJ Asel, A Franson, T Zhu, YM Lu, LJ Brillson, ...
APL Materials 6 (8), 086103, 2018
Atomic scale visualization of topological spin textures in the chiral magnet MnGe
J Repicky, PK Wu, T Liu, J Corbett, T Zhu, A Ahmed, N Takeuchi, ...
arXiv preprint arXiv:2008.00886, 2020
Coherent Growth and Characterization of van der Waals 1T-VSe Layers on GaAs(111)B Using Molecular Beam Epitaxy
T Zhu, DJ O'Hara, BA Noesges, M Zhu, JJ Repicky, MR Brenner, ...
arXiv preprint arXiv:2004.05506, 2020
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20