Device scaling limits of Si MOSFETs and their application dependencies DJ Frank, RH Dennard, E Nowak, PM Solomon, Y Taur, HSP Wong
Proceedings of the IEEE 89 (3), 259-288, 2001
2013 2001 An integrated logic circuit assembled on a single carbon nanotube Z Chen, J Appenzeller, YM Lin, J Sippel-Oakley, AG Rinzler, J Tang, ...
Science 311 (5768), 1735-1735, 2006
726 2006 Nanoscale cmos HSP Wong, DJ Frank, PM Solomon, CHJ Wann, JJ Welser
Proceedings of the IEEE 87 (4), 537-570, 1999
688 1999 Six-band MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim
Journal of Applied Physics 94 (2), 1079-1095, 2003
618 2003 Silicon CMOS devices beyond scaling W Haensch, EJ Nowak, RH Dennard, PM Solomon, A Bryant, ...
IBM Journal of Research and Development 50 (4.5), 339-361, 2006
598 2006 Coupled electron-hole transport U Sivan, PM Solomon, H Shtrikman
Physical review letters 68 (8), 1196, 1992
465 1992 Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation HSP Wong, DJ Frank, PM Solomon
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
432 1998 Method for making bonded metal back-plane substrates KK Chan, CP D'emic, EC Jones, PM Solomon, S Tiwari
US Patent 6,057,212, 2000
312 2000 Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements J Bruley, JO Chu, KL Lee, AS Ozcan, PM Solomon, JB Yau
US Patent 10,269,714, 2019
305 2019 It’s time to reinvent the transistor! TN Theis, PM Solomon
Science 327 (5973), 1600-1601, 2010
300 2010 Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
281 2010 A comparison of semiconductor devices for high-speed logic PM Solomon
Proceedings of the IEEE 70 (5), 489-509, 1982
270 1982 In quest of the “next switch”: prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor TN Theis, PM Solomon
Proceedings of the IEEE 98 (12), 2005-2014, 2010
264 2010 Ultra thin body fully-depleted SOI MOSFETs BB Doris, M Ieong, Z Ren, PM Solomon, M Yang
US Patent 7,459,752, 2008
255 2008 Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model MK Ieong, PM Solomon, SE Laux, HSP Wong, D Chidambarrao
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
238 1998 New phenomena in coupled transport between 2D and 3D electron-gas layers PM Solomon, PJ Price, DJ Frank, DC La Tulipe
Physical review letters 63 (22), 2508, 1989
235 1989 Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers PM Solomon, H Morkoc
IEEE Transactions on Electron Devices 31 (8), 1015-1027, 1984
216 1984 Negative charge, barrier heights, and the conduction‐band discontinuity in Alx 1−x As capacitors TW Hickmott, PM Solomon, R Fischer, H Morkoç
Journal of Applied Physics 57 (8), 2844-2853, 1985
214 1985 Bipolar transistor design for optimized power-delay logic circuits DD Tang, PM Solomon
IEEE Journal of Solid-State Circuits 14 (4), 679-684, 1979
185 1979 Breakdown in silicon oxide− A review P Solomon
Journal of Vacuum Science and Technology 14 (5), 1122-1130, 1977
179 1977 