Materials science with large-scale data and informatics: Unlocking new opportunities J Hill, G Mulholland, K Persson, R Seshadri, C Wolverton, B Meredig
Mrs Bulletin 41 (5), 399-409, 2016
258 2016 Web-based machine learning models for real-time screening of thermoelectric materials properties MW Gaultois, AO Oliynyk, A Mar, TD Sparks, GJ Mulholland, B Meredig
American Institute of Physics, 2016
185 * 2016 Perspective: Web-based machine learning models for real-time screening of thermoelectric materials properties MW Gaultois, AO Oliynyk, A Mar, TD Sparks, GJ Mulholland, B Meredig
APL Materials 4 (5), 053213, 2016
185 2016 InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ...
Applied Physics Letters 97 (3), 2010
117 2010 Low-temperature synthesis of large-area, free-standing nanorod arrays on ITO/glass and other conducting substrates KP Musselman, GJ Mulholland, AP Robinson, L Schmidt-Mende, ...
99 2008 Efficiency retention at high current injection levels in X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ...
Applied Physics Letters 95 (12), 121107, 2009
80 2009 On carrier spillover in c-and m-plane InGaN light emitting diodes J Lee, X Li, X Ni, Ü Özgür, H Morkoç, T Paskova, G Mulholland, KR Evans
Applied Physics Letters 95 (20), 201113, 2009
61 2009 Perspective: Materials informatics across the product lifecycle: Selection, manufacturing, and certification GJ Mulholland, SP Paradiso
Apl Materials 4 (5), 2016
41 2016 Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN X Ni, J Lee, M Wu, X Li, R Shimada, Ü Özgür, AA Baski, H Morkoç, ...
Applied Physics Letters 95 (10), 2009
32 2009 The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ...
physica status solidi (RRL)–Rapid Research Letters 4 (8‐9), 194-196, 2010
26 2010 Identifying threading dislocations in GaN films and substrates by electron channelling RJ Kamaladasa, F Liu, LM Porter, RF Davis, DD Koleske, G Mulholland, ...
Journal of Microscopy 244 (3), 311-319, 2011
24 2011 HVPE GaN for high power electronic Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ...
Solid-state electronics 79, 238-243, 2013
17 2013 A recommendation engine for suggesting unexpected thermoelectric chemistries MW Gaultois, AO Oliynyk, A Mar, TD Sparks, GJ Mulholland, B Meredig
arXiv preprint arXiv:1502.07635, 2015
9 2015 Hackathon aims to solve materials problems G Mulholland, B Meredig
MRS Bulletin 40 (4), 366-370, 2015
7 2015 Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates SM Eichfeld, D Won, K Trumbull, M Labella, X Weng, J Robinson, ...
physica status solidi c 8 (7‐8), 2053-2055, 2011
5 2011 On the reduction of efficiency loss in polar c ‐plane and non‐polar m ‐plane InGaN light emitting diodes X Li, X Ni, HY Liu, F Zhang, S Liu, J Lee, V Avrutin, Ü Özgür, T Paskova, ...
physica status solidi c 8 (5), 1560-1563, 2011
3 2011 High-throughput characterization of Lu-doped zirconia R Huang, E Antono, B Meredig, GJ Mulholland, TC Davenport, SM Haile
Solid State Ionics 368, 115698, 2021
2 2021 Internal quantum efficiency of m-plane InGaN on Si and GaN J Lee, X Ni, M Wu, X Li, R Shimada, Ü Özgür, AA Baski, H Morkoç, ...
Gallium Nitride Materials and Devices V 7602, 306-311, 2010
2 2010 Product design and materials development integration using a machine learning generated capability map JB Ling, AWA Van Grootel, JS Koeller, JS Peerless, EMT Antono, ...
US Patent 11,004,037, 2021
1 2021 GaN Power Schottky Diodes RP Tompkins, JR Smith, S Zhou, KW Kirchner, MA Derenge, KA Jones, ...
ECS Transactions 45 (7), 17, 2012
1 2012 
Tania PaskovaECE Dept. NCSUAdresse e-mail validée de ncsu.edu
