Gianluca Fiori
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Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
Simulation of graphene nanoribbon field-effect transistors
G Fiori, G Iannaccone
IEEE Electron Device Letters 28 (8), 760-762, 2007
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures
D McManus, S Vranic, F Withers, V Sanchez-Romaguera, M Macucci, ...
Nature nanotechnology 12 (4), 343-350, 2017
Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride
S Bruzzone, G Fiori
Applied Physics Letters 99 (22), 222108, 2011
Performance of arsenene and antimonene double-gate MOSFETs from first principles
G Pizzi, M Gibertini, E Dib, N Marzari, G Iannaccone, G Fiori
Nature communications 7 (1), 1-9, 2016
Quantum engineering of transistors based on 2D materials heterostructures
G Iannaccone, F Bonaccorso, L Colombo, G Fiori
Nature nanotechnology 13 (3), 183-191, 2018
Ultralow-voltage bilayer graphene tunnel FET
G Fiori, G Iannaccone
IEEE Electron Device Letters 30 (10), 1096-1098, 2009
Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs
Y Yoon, G Fiori, S Hong, G Iannaccone, J Guo
IEEE Transactions on electron devices 55 (9), 2314-2323, 2008
Lateral graphene–hBCN heterostructures as a platform for fully two-dimensional transistors
G Fiori, A Betti, S Bruzzone, G Iannaccone
Acs Nano 6 (3), 2642-2648, 2012
Multiscale modeling for graphene-based nanoscale transistors
G Fiori, G Iannaccone
Proceedings of the IEEE 101 (7), 1653-1669, 2013
Current saturation and voltage gain in bilayer graphene field effect transistors
BN Szafranek, G Fiori, D Schall, D Neumaier, H Kurz
Nano letters 12 (3), 1324-1328, 2012
A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry
G Fiori, G Iannaccone, G Klimeck
IEEE Transactions on electron devices 53 (8), 1782-1788, 2006
On the possibility of tunable-gap bilayer graphene FET
G Fiori, G Iannaccone
IEEE Electron Device Letters 30 (3), 261-264, 2009
Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam
Y Katagiri, T Nakamura, A Ishii, C Ohata, M Hasegawa, S Katsumoto, ...
Nano letters 16 (6), 3788-3794, 2016
Electrical properties of graphene-metal contacts
T Cusati, G Fiori, A Gahoi, V Passi, MC Lemme, A Fortunelli, ...
Scientific reports 7 (1), 1-11, 2017
Velocity saturation in few-layer MoS2 transistor
G Fiori, BN Szafranek, G Iannaccone, D Neumaier
Applied Physics Letters 103 (23), 233509, 2013
Heterojunction hybrid devices from vapor phase grown MoS 2
C Yim, M O'Brien, N McEvoy, S Riazimehr, H Schäfer-Eberwein, A Bablich, ...
Scientific reports 4 (1), 1-7, 2014
Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics
P Marconcini, A Cresti, F Triozon, G Fiori, B Biel, YM Niquet, M Macucci, ...
ACS nano 6 (9), 7942-7947, 2012
Inkjet printed 2D-crystal based strain gauges on paper
C Casiraghi, M Macucci, K Parvez, R Worsley, Y Shin, F Bronte, C Borri, ...
Carbon 129, 462-467, 2018
A semianalytical model of bilayer-graphene field-effect transistor
M Cheli, G Fiori, G Iannaccone
IEEE Transactions on Electron Devices 56 (12), 2979-2986, 2009
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