sylvain blayac
sylvain blayac
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MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits
S Blayac, M Riet, JL Benchimol, F Alexandre, P Berdaguer, M Kahn, ...
Conference Proceedings. 14th Indium Phosphide and Related Materials …, 2002
472002
DC-100-GHz frequency doublers in InP DHBT technology
V Puyal, A Konczykowska, P Nouet, S Bernard, S Blayac, F Jorge, M Riet, ...
IEEE Transactions on Microwave theory and techniques 53 (4), 1338-1344, 2005
372005
InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
P André, S Blayac, P Berdaguer, JL Benchimol, J Godin, N Kaffmann, ...
IEEE Journal of Solid-State Circuits 36 (9), 1321-1327, 2001
292001
Residual stress estimation in damascene copper interconnects using embedded sensors
R Vayrette, C Rivero, B Gros, S Blayac, K Inal
Microelectronic Engineering 87 (3), 412-415, 2010
222010
InP HBT driver circuit optimization for high-speed ETDM transmission
N Kauffmann, S Blayac, M Abboun, P André, F Aniel, M Riet, ...
IEEE Journal of Solid-State Circuits 36 (4), 639-647, 2001
192001
Lateral design of inp/ingaas dhbts for 40 gbit/s ics
S Blayac, M Riet, JL Benchimol, P Berdaguer, N Kauffman, J Godin, ...
Conference Proceedings. 2000 International Conference on Indium Phosphide …, 2000
172000
40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments
J Godin, P Andre, JL Benchimol, P Berdaguer, S Blayac, JR Burie, ...
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st …, 1999
171999
Measurement of base and collector transit times in thin-base InGaAs/InP HBT
M Kahn, S Blayac, M Riet, P Berdaguer, V Dhalluin, F Alexandre, J Godin
IEEE Electron Device Letters 24 (7), 430-432, 2003
162003
Characterization of sintered inkjet‐printed silicon nanoparticle thin films for thermoelectric devices
E Drahi, A Gupta, S Blayac, S Saunier, P Benaben
physica status solidi (a) 211 (6), 1301-1307, 2014
152014
A DC-100 GHz frequency doubler in InP DHBT technology
V Puyal, A Konczykowska, P Nouet, S Bernard, S Blayac, F Jorge, M Riet, ...
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No …, 2004
152004
Improved InGaAs/InP DHBT technology for 40 Gbit/s optical communication circuits
J Godin, M Riet, S Blayac, P Berdaguer, JL Benchimol, A Konczykowska, ...
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd …, 2000
152000
Laser-patterned metallic interconnections for all stretchable organic electrochemical transistors
B Marchiori, R Delattre, S Hannah, S Blayac, M Ramuz
Scientific reports 8 (1), 1-9, 2018
142018
Impact of ink synthesis on processing of inkjet-printed silicon nanoparticle thin films: A comparison of Rapid Thermal Annealing and photonic sintering
E Drahi, S Blayac, A Borbely, P Benaben
Thin Solid Films 574, 169-176, 2015
142015
Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
JL Benchimol, J Mba, B Sermage, M Riet, S Blayac, P Berdaguer, ...
Journal of crystal growth 209 (2-3), 476-480, 2000
142000
InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model
S Blayac, M Riet, JL Benchimol, M Abboun, F Aniel, P Berdaguer, ...
Conference Proceedings. Eleventh International Conference on Indium …, 1999
141999
InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits
J Godin, M Riet, S Blayac, P Berdaguer, V Dhalluin, F Alexandre, M Kahn, ...
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC …, 2002
122002
Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs
K Huet, M Feraille, D Rideau, R Delamare, V Aubry-Fortuna, M Kasbari, ...
ESSDERC 2008-38th European Solid-State Device Research Conference, 234-237, 2008
102008
Direct local strain measurement in damascene interconnects
M Kasbari, C Rivero, S Blayac, F Cacho, O Bostrom, R Fortunier
MRS Online Proceedings Library Archive 990, 2007
102007
Monolithic integrated optical component including a modulator and a heterojunction bipolar transistor
F Devaux, S Blayac, P Andre
US Patent 6,870,977, 2005
102005
Method of manufacturing a double-heterojunction bipolar transistor on III-V material
S Blayac, M Riet, P Berdaguer
US Patent 6,495,869, 2002
102002
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