| MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits S Blayac, M Riet, JL Benchimol, F Alexandre, P Berdaguer, M Kahn, ... Conference Proceedings. 14th Indium Phosphide and Related Materials …, 2002 | 47 | 2002 |
| DC-100-GHz frequency doublers in InP DHBT technology V Puyal, A Konczykowska, P Nouet, S Bernard, S Blayac, F Jorge, M Riet, ... IEEE Transactions on Microwave theory and techniques 53 (4), 1338-1344, 2005 | 37 | 2005 |
| InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits P André, S Blayac, P Berdaguer, JL Benchimol, J Godin, N Kaffmann, ... IEEE Journal of Solid-State Circuits 36 (9), 1321-1327, 2001 | 29 | 2001 |
| Residual stress estimation in damascene copper interconnects using embedded sensors R Vayrette, C Rivero, B Gros, S Blayac, K Inal Microelectronic Engineering 87 (3), 412-415, 2010 | 22 | 2010 |
| InP HBT driver circuit optimization for high-speed ETDM transmission N Kauffmann, S Blayac, M Abboun, P André, F Aniel, M Riet, ... IEEE Journal of Solid-State Circuits 36 (4), 639-647, 2001 | 19 | 2001 |
| Lateral design of inp/ingaas dhbts for 40 gbit/s ics S Blayac, M Riet, JL Benchimol, P Berdaguer, N Kauffman, J Godin, ... Conference Proceedings. 2000 International Conference on Indium Phosphide …, 2000 | 17 | 2000 |
| 40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments J Godin, P Andre, JL Benchimol, P Berdaguer, S Blayac, JR Burie, ... GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st …, 1999 | 17 | 1999 |
| Laser-patterned metallic interconnections for all stretchable organic electrochemical transistors B Marchiori, R Delattre, S Hannah, S Blayac, M Ramuz Scientific reports 8 (1), 1-9, 2018 | 16 | 2018 |
| Measurement of base and collector transit times in thin-base InGaAs/InP HBT M Kahn, S Blayac, M Riet, P Berdaguer, V Dhalluin, F Alexandre, J Godin IEEE Electron Device Letters 24 (7), 430-432, 2003 | 16 | 2003 |
| Improved InGaAs/InP DHBT technology for 40 Gbit/s optical communication circuits J Godin, M Riet, S Blayac, P Berdaguer, JL Benchimol, A Konczykowska, ... GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd …, 2000 | 16 | 2000 |
| Impact of ink synthesis on processing of inkjet-printed silicon nanoparticle thin films: A comparison of Rapid Thermal Annealing and photonic sintering E Drahi, S Blayac, A Borbely, P Benaben Thin Solid Films 574, 169-176, 2015 | 15 | 2015 |
| Characterization of sintered inkjet‐printed silicon nanoparticle thin films for thermoelectric devices E Drahi, A Gupta, S Blayac, S Saunier, P Benaben physica status solidi (a) 211 (6), 1301-1307, 2014 | 15 | 2014 |
| A DC-100 GHz frequency doubler in InP DHBT technology V Puyal, A Konczykowska, P Nouet, S Bernard, S Blayac, F Jorge, M Riet, ... 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No …, 2004 | 15 | 2004 |
| Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs JL Benchimol, J Mba, B Sermage, M Riet, S Blayac, P Berdaguer, ... Journal of crystal growth 209 (2-3), 476-480, 2000 | 14 | 2000 |
| InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model S Blayac, M Riet, JL Benchimol, M Abboun, F Aniel, P Berdaguer, ... Conference Proceedings. Eleventh International Conference on Indium …, 1999 | 14 | 1999 |
| InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits J Godin, M Riet, S Blayac, P Berdaguer, V Dhalluin, F Alexandre, M Kahn, ... 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC …, 2002 | 12 | 2002 |
| Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs K Huet, M Feraille, D Rideau, R Delamare, V Aubry-Fortuna, M Kasbari, ... ESSDERC 2008-38th European Solid-State Device Research Conference, 234-237, 2008 | 10 | 2008 |
| Direct local strain measurement in damascene interconnects M Kasbari, C Rivero, S Blayac, F Cacho, O Bostrom, R Fortunier MRS Online Proceedings Library Archive 990, 2007 | 10 | 2007 |
| Monolithic integrated optical component including a modulator and a heterojunction bipolar transistor F Devaux, S Blayac, P Andre US Patent 6,870,977, 2005 | 10 | 2005 |
| Method of manufacturing a double-heterojunction bipolar transistor on III-V material S Blayac, M Riet, P Berdaguer US Patent 6,495,869, 2002 | 10 | 2002 |
