The controlled growth of GaN nanowires SD Hersee, X Sun, X Wang
Nano letters 6 (8), 1808-1811, 2006
707 2006 Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material SD Hersee, X Wang, X Sun
US Patent 7,521,274, 2009
327 2009 Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials D Zubia, SD Hersee
Journal of applied physics 85 (9), 6492-6496, 1999
322 1999 Nanostructured devices for separation and analysis GP Lopez, SRJ Brueck, LK Ista, M O'brien, SD Hersee
US Patent 6,685,841, 2004
223 2004 Unusually strong space-charge-limited current in thin wires AA Talin, F Léonard, BS Swartzentruber, X Wang, SD Hersee
Physical review letters 101 (7), 076802, 2008
182 2008 Threading defect elimination in GaN nanowires SD Hersee, AK Rishinaramangalam, MN Fairchild, L Zhang, P Varangis
Journal of Materials Research 26 (17), 2293-2298, 2011
162 2011 A study of the orientation dependence of Ga (Al) As growth by MOVPE SD Hersee, E Barbier, R Blondeau
Journal of Crystal Growth 77 (1-3), 310-320, 1986
148 1986 Nonalloyed Ti/Al Ohmic contacts to n ‐type GaN using high‐temperature premetallization anneal LF Lester, JM Brown, JC Ramer, L Zhang, SD Hersee, JC Zolper
Applied physics letters 69 (18), 2737-2739, 1996
138 1996 Threshold current of single quantum well lasers: The role of the confining layers J Nagle, S Hersee, M Krakowski, T Weil, C Weisbuch
Applied physics letters 49 (20), 1325-1327, 1986
126 1986 Effect of threading defects on InGaN∕ GaN multiple quantum well light emitting diodes MS Ferdous, X Wang, MN Fairchild, SD Hersee
Applied Physics Letters 91 (23), 2007
117 2007 Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy D Zubia, SH Zaidi, SRJ Brueck, SD Hersee
Applied Physics Letters 76 (7), 858-860, 2000
116 2000 GaN nanowire light emitting diodes based on templated and scalable nanowire growth process SD Hersee, M Fairchild, AK Rishinaramangalam, MS Ferdous, L Zhang, ...
Electronics Letters 45 (1), 75-76, 2009
115 2009 Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN JC Zolper, M Hagerott Crawford, AJ Howard, J Ramer, SD Hersee
Applied physics letters 68 (2), 200-202, 1996
111 1996 The operation of metalorganic bubblers at reduced pressure SD Hersee, JM Ballingall
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (2 …, 1990
110 1990 Selective growth of Ge on Si(100) through vias of nanotemplate using solid source molecular beam epitaxy Q Li, SM Han, SRJ Brueck, S Hersee, YB Jiang, H Xu
Applied Physics Letters 83 (24), 5032-5034, 2003
109 2003 Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure SD Hersee, B De Cremoux, JP Duchemin
Applied physics letters 44 (5), 476-478, 1984
106 1984 Low-pressure chemical vapor deposition SD Hersee, JP Duchemin
Annual Review of Materials Science 12 (1), 65-80, 1982
106 1982 Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells HS Gingrich, DR Chumney, SZ Sun, SD Hersee, LF Lester, SRJ Brueck
IEEE Photonics Technology Letters 9 (2), 155-157, 1997
98 1997 GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications JP Duchemin, JP Hirtz, M Razeghi, M Bonnet, SD Hersee
Journal of Crystal Growth 55 (1), 64-73, 1981
98 1981 Electron cyclotron resonance etching characteristics of GaN in SiCl4 /Ar L Zhang, J Ramer, J Brown, K Zheng, LF Lester, SD Hersee
Applied physics letters 68 (3), 367-369, 1996
93 1996