Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo
Journal of Applied Physics 107 (11), 2010
234 2010 Transport and magnetic resonance studies of polyaniline JP Travers, J Chroboczek, F Devreux, F Genoud, M Nechtschein, A Syed, ...
Molecular Crystals and Liquid Crystals 121 (1-4), 195-199, 1985
207 1985 75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...
Digest. International Electron Devices Meeting,, 355-358, 2002
146 2002 Water effects in polyaniline: NMR and transport properties M Nechtschein, C Santier, JP Travers, J Chroboczek, A Alix, M Ripert
Synthetic Metals 18 (1-3), 311-316, 1987
136 1987 Fabrication and structure of epitaxial Er silicide films on (111) Si FA d’Avitaya, A Perio, JC Oberlin, Y Campidelli, JA Chroboczek
Applied physics letters 54 (22), 2198-2200, 1989
131 1989 Electronic transport properties of epitaxial erbium silicide/silicon heterostructures JY Duboz, PA Badoz, FA d’Avitaya, JA Chroboczek
Applied physics letters 55 (1), 84-86, 1989
101 1989 Growth, characterization and electrical properties of epitaxial erbium silicide FA d'Avitaya, PA Badoz, Y Campidelli, JA Chroboczek, JY Duboz, A Perio, ...
Thin Solid Films 184 (1-2), 283-293, 1990
69 1990 Epitaxial erbium silicide films on Si (111) surface: Fabrication, structure, and electrical properties JY Duboz, PA Badoz, A Perio, JC Oberlin, FA d'Avitaya, Y Campidelli, ...
Applied Surface Science 38 (1-4), 171-177, 1989
62 1989 A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters S Jouan, R Planche, H Baudry, P Ribot, JA Chroboczek, D Dutartre, ...
IEEE Transactions on Electron Devices 46 (7), 1525-1531, 1999
58 1999 Origin of low-frequency noise in pentacene field-effect transistors Y Xu, T Minari, K Tsukagoshi, J Chroboczek, F Balestra, G Ghibaudo
Solid-state electronics 61 (1), 106-110, 2011
54 2011 Crystallographic and magnetic structures of Er3Si5 S Auffret, J Pierre, B Lambert, JL Soubeyroux, JA Chroboczek
Physica B: Condensed Matter 162 (3), 271-280, 1990
54 1990 Impurity conduction in silicon and effect of uniaxial compression on p-type Si JA Chroboczek, FH Pollak, HF Staunton
Philosophical Magazine B 50 (1), 113-156, 1984
54 1984 Carrier mobility in organic field-effect transistors Y Xu, M Benwadih, R Gwoziecki, R Coppard, T Minari, C Liu, ...
Journal of Applied Physics 110 (10), 2011
53 2011 Low frequency noise in thin gate oxide MOSFETs R Kolarova, T Skotnicki, JA Chroboczek
Microelectronics Reliability 41 (4), 579-585, 2001
50 2001 Low frequency (1/f) noise model for the base current in polysilicon emitter bipolar junction transistors A Mounib, G Ghibaudo, F Balestra, D Pogany, A Chantre, J Chroboczek
Journal of Applied Physics 79 (6), 3330-3336, 1996
50 1996 Silicon overgrowth on CoSi2/Si (111) epitaxial structures: application to permeable base transistor FA d'Avitaya, JA Chroboczek, C d'Anterroches, G Glastre, Y Campidelli, ...
Journal of Crystal Growth 81 (1-4), 463-469, 1987
43 1987 Evidence from Transport Measurements at High Pressures for Donor Ions Occupying Non‐Equivalent Lattice Positions in InSb S Porowski, M Kończykowski, J Chroboczek
physica status solidi (b) 63 (1), 291-296, 1974
43 1974 Dimension scaling of P Llinares, D Celi, O Roux-dit-Buisson, G Ghibaudo, JA Chroboczek
Journal of applied physics 82 (5), 2671-2675, 1997
42 1997 1.54 μm photoluminescence of erbium-implanted silicon D Moutonnet, H l'Haridon, PN Favennec, M Salvi, M Gauneau, ...
Materials Science and Engineering: B 4 (1-4), 75-77, 1989
40 1989 Low-Frequency Noise in Oxide-Based Z Fang, HY Yu, JA Chroboczek, G Ghibaudo, J Buckley, B DeSalvo, X Li, ...
IEEE transactions on electron devices 59 (3), 850-853, 2012
39 2012 
Paulo Sergio Soares GuimaraesProfessor of Physics, Universidade Federal de Minas GeraisAdresse e-mail validée de fisica.ufmg.br
