| A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology N Butt, K Mcstay, A Cestero, H Ho, W Kong, S Fang, R Krishnan, B Khan, ... 2010 International Electron Devices Meeting, 27.5. 1-27.5. 4, 2010 | 40 | 2010 |
| Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond B Jayaraman, S Gupta, Y Zhang, P Goyal, H Ho, R Krishnan, S Fang, ... 2012 IEEE International Conference on IC Design & Technology, 1-4, 2012 | 16 | 2012 |
| DRAM with schottky barrier FET and MIM trench capacitor P Goyal, HL Ho, P Jana, J Liu US Patent 8,343,864, 2013 | 8 | 2013 |
| Modeling and characterization of gate leakage in high-K metal gate technology-based embedded DRAM M Bajaj, RK Pandey, S De, ND Sathaye, B Jayaraman, R Krishnan, ... IEEE transactions on electron devices 60 (12), 4152-4158, 2013 | 4 | 2013 |
| Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs P Goyal | 3 | 2007 |
| Characterization of novel TiN/HfO2metal insulator semiconductor stack for 32nm eDRAM P Goyal, S Gupta, R Krishnan, W Davies, H Ho, A Tessier, A Arya, ... 2010 IEEE International SOI Conference (SOI), 1-2, 2010 | 2 | 2010 |
| Design and simulation of strained Si/SiGe dual channel MOSFETs P Goyal, JE Moon, SK Kurinec 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 1 | 2007 |
| Method to enhance crop yield by means of artificial intelligence and natural language processing. P Goyal, N Sathaye, C Allen Ip.com -Journal, 2014 | | 2014 |
| Method to recommend type of crop and the best time to plant P Goyal, N Sathaye, C Allen The IP.com Journal, 2014 | | 2014 |
SUBRAMANIAN S. IYERUniversity of California at Los Angeles,Adresse e-mail validée de g.ucla.edu
