Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation D Ielmini, S Lavizzari, D Sharma, AL Lacaita
2007 IEEE International Electron Devices Meeting, 939-942, 2007
202 2007 Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part I: Experimental study D Ielmini, D Sharma, S Lavizzari, AL Lacaita
IEEE Transactions on Electron Devices 56 (5), 1070-1077, 2009
192 2009 Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ...
2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018
129 2018 Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5 D Ielmini, S Lavizzari, D Sharma, AL Lacaita
Applied Physics Letters 92 (19), 2008
106 2008 Statistics of resistance drift due to structural relaxation in phase-change memory arrays M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano
IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010
99 2010 Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ...
Journal of Applied Physics 121 (20), 2017
80 2017 Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part II: Physics-based modeling S Lavizzari, D Ielmini, D Sharma, AL Lacaita
IEEE Transactions on Electron Devices 56 (5), 1078-1085, 2009
77 2009 First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms, ...
2017 Symposium on VLSI Technology, T158-T159, 2017
72 2017 Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ...
IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017
71 2017 Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices D Fugazza, D Ielmini, S Lavizzari, AL Lacaita
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
63 2009 Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells D Ielmini, D Sharma, S Lavizzari, AL Lacaita
2008 IEEE International Reliability Physics Symposium, 597-603, 2008
41 2008 Threshold-Switching Delay Controlled by S Lavizzari, D Sharma, D Ielmini
IEEE transactions on electron devices 57 (5), 1047-1054, 2010
36 2010 Investigation of the endurance of FE-HfO2 devices by means of TDDB studies K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018
33 2018 Transient effects of delay, switching and recovery in phase change memory (PCM) devices S Lavizzari, D Ielmini, D Sharma, AL Lacaita
2008 IEEE International Electron Devices Meeting, 1-4, 2008
33 2008 ELECTRON DEVICE LT Su, DA Antoniadis, ND Arora, BS Doyle, DB Krakauer, C Tedesco, ...
33 2005 Interface engineering for thermal disturb immune phase change memory technology A Redaelli, M Boniardi, A Ghetti, U Russo, C Cupeta, S Lavizzari, ...
2013 IEEE International Electron Devices Meeting, 30.4. 1-30.4. 4, 2013
30 2013 Transient simulation of delay and switching effects in phase-change memories S Lavizzari, D Ielmini, AL Lacaita
IEEE Transactions on Electron Devices 57 (12), 3257-3264, 2010
30 2010 Random telegraph signal noise in phase change memory devices D Fugazza, D Ielmini, S Lavizzari, AL Lacaita
2010 IEEE International Reliability Physics Symposium, 743-749, 2010
29 2010 A new transient model for recovery and relaxation oscillations in phase-change memories S Lavizzari, D Ielmini, AL Lacaita
IEEE transactions on electron devices 57 (8), 1838-1845, 2010
28 2010 Memory cells and integrated devices A Redaelli, U Russo, A Pirovano, S Lavizzari
US Patent 8,723,155, 2014
27 2014 
Daniele IelminiProfessor of ElectronicsAdresse e-mail validée de elet.polimi.it
