Demonstration of a III–nitride/silicon tandem solar cell LA Reichertz, I Gherasoiu, KM Yu, VM Kao, W Walukiewicz, JW Ager III
Applied physics express 2 (12), 122202, 2009
88 2009 Electron cyclotron effective mass in indium nitride M Goiran, M Millot, JM Poumirol, I Gherasoiu, W Walukiewicz, J Leotin
Applied physics letters 96 (5), 2010
51 2010 Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy M Millot, N Ubrig, JM Poumirol, I Gherasoiu, W Walukiewicz, S George, ...
Physical Review B 83 (12), 125204, 2011
41 2011 Effect of stress and free-carrier concentration on photoluminescence in InN DY Song, ME Holtz, A Chandolu, A Bernussi, SA Nikishin, MW Holtz, ...
Applied Physics Letters 92 (12), 2008
39 2008 Gas source molecular beam epitaxy of high quality on Si(111) S Nikishin, G Kipshidze, V Kuryatkov, K Choi, Ì Gherasoiu, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
28 2001 Electrical properties of junctions based on superlattices of AlN/AlGa(In)N V Kuryatkov, K Zhu, B Borisov, A Chandolu, I Gherasoiu, G Kipshidze, ...
Applied physics letters 83 (7), 1319-1321, 2003
27 2003 AlN/AlGaN Bragg reflectors grown by gas source molecular beam epitaxy G Kipshidze, V Kuryatkov, K Choi, I Gherasoiu, B Borisov, S Nikishin, ...
physica status solidi (a) 188 (2), 881-884, 2001
27 2001 Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration ME Holtz, I Gherasoiu, V Kuryatkov, SA Nikishin, AA Bernussi, MW Holtz
Journal of Applied Physics 105 (6), 2009
23 2009 High quality Inx Ga1–x N thin films with x > 0.2 grown on silicon I Gherasoiu, KM Yu, LA Reichertz, VM Kao, M Hawkridge, JW Ager, ...
physica status solidi (b) 247 (7), 1747-1749, 2010
22 2010 Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates W Walukiewicz, I Gherasoiu, LA Reichertz
US Patent 9,029,867, 2015
19 2015 InGaN doping for high carrier concentration in plasma‐assisted molecular beam epitaxy I Gherasoiu, KM Yu, LA Reichertz, W Walukiewicz
physica status solidi (c) 11 (3‐4), 381-384, 2014
19 2014 High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy G Kipshidze, S Nikishin, V Kuryatkov, K Choi, Ì Gherasoiu, T Prokofyeva, ...
Journal of electronic materials 30, 825-828, 2001
16 2001 Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system I Gherasoiu, M O’Steen, T Bird, D Gotthold, A Chandolu, DY Song, SX Xu, ...
Journal of Vacuum Science & Technology A 26 (3), 399-405, 2008
14 2008 Photovoltaic action from Inx Ga1‐x N p‐n junctions with x > 0.2 grown on silicon I Gherasoiu, LA Reichertz, KM Yu, JW Ager III, VM Kao, W Walukiewicz
physica status solidi c 8 (7‐8), 2466-2468, 2011
12 2011 Growth mechanism of AlN by metal-organic molecular beam epitaxy HT I. Gherasoiu, S. Nikishin, G. Kipshidze, B. Borisov, A. Chandolu, C ...
Journal of Applied Physics 96 (11), 2004
12 2004 Tandem Photoelectrochemical Cell for Water Dissociation W Walukiewicz, I Gherasoiu
US Patent App. 12/833,790, 2011
9 2011 InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices I Gherasoiu, KM Yu, L Reichertz, W Walukiewicz
Journal of Crystal Growth 425, 393-397, 2015
8 2015 Growth of high quality InN on production style PA‐MBE system I Gherasoiu, M O'Steen, T Bird, D Gotthold, A Chandolu, DY Song, SX Xu, ...
physica status solidi c 5 (6), 1642-1644, 2008
8 2008 Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates W Walukiewicz, I Gherasoiu, L Reichertz
US Patent 9,312,430, 2016
6 2016 Mechanism of carrier transport in hybrid GaN/AlN/Si solar cells H Ekinci, VV Kuryatkov, I Gherasoiu, SY Karpov, SA Nikishin
Journal of Electronic Materials 46, 6078-6083, 2017
5 2017