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Jean-Guy Tartarin
Jean-Guy Tartarin
Professeur, Université de Toulouse
Adresse e-mail validée de laas.fr
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Broadband frequency dispersion small-signal modeling of the output conductance and transconductance in AlInN/GaN HEMTs
SD Nsele, L Escotte, JG Tartarin, S Piotrowicz, SL Delage
IEEE Transactions on Electron Devices 60 (4), 1372-1378, 2013
572013
Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design
G Soubercaze-Pun, JG Tartarin, L Bary, J Rayssac, E Morvan, B Grimbert, ...
2006 IEEE MTT-S International Microwave Symposium Digest, 747-750, 2006
312006
Generation‐Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization
JG Tartarin, G Soubercaze‐Pun, JL Grondin, L Bary, J Mimila‐Arroyo, ...
AIP Conference Proceedings 922 (1), 163-166, 2007
212007
Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction
JG Tartarin, A Rennane, E Angeli, L Bary, JC De Jaeger, S Delage, ...
Noise in Devices and Circuits II 5470, 296-306, 2004
212004
Ka-band low noise amplifiers based on InAlN/GaN technologies
SD Nsele, C Robin, JG Tartarin, L Escotte, S Piotrowicz, O Jardel, ...
2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015
202015
I-DLTS, electrical lag and low frequency noise measurements of trapping effects in AlGaN/GaN HEMT for reliability studies
JG Tartarin, S Karboyan, F Olivié, G Astre, L Bary, B Lambert
2011 6th European Microwave Integrated Circuit Conference, 438-441, 2011
202011
Microwave noise parameters of pseudomorphic GaInAs HEMTs under optical illumination
L Escotte, K Grenier, JG Tartarin, J Graffeuil
IEEE transactions on microwave theory and techniques 46 (11), 1788-1789, 1998
201998
Diagnostic tools for accurate reliability investigations of GaN devices
JG Tartarin
2011 21st International Conference on Noise and Fluctuations, 452-457, 2011
192011
Noise characteristics of AlInN/GaN HEMTs at microwave frequencies
SD Nsele, L Escotte, JG Tartarin, S Piotrowicz
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013
182013
RF source characterization of tire pressure monitoring system
M Cheikh, J David, JG Tartarin, S Kessler, A Morin
2009 European Wireless Technology Conference, 176-179, 2009
182009
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
M Borgarino, JG Tartarin, J Kuchenbecker, T Parra, H Lafontaine, ...
IEEE microwave and guided wave letters 10 (11), 466-468, 2000
182000
InAlN/GaN HEMT technology for robust HF receivers: an overview of the HF and LF noise performances
SD Nsele, JG Tartarin, L Escotte, S Piotrowicz, S Delage
2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015
172015
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
S Karboyan, JG Tartarin, M Rzin, L Brunel, A Curutchet, N Malbert, ...
Microelectronics Reliability 53 (9-11), 1491-1495, 2013
172013
Generation-recombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: impact of HTRB stress on short term and long term memory effects
JG Tartarin, G Astre, S Karboyan, T Noutsa, B Lambert
2013 IEEE International Wireless Symposium (IWS), 1-4, 2013
172013
Hot carrier effects in Si-SiGe HBTs
M Borgarino, J Kuchenbecker, JG Tartarin, L Bary, T Kovacic, R Plana, ...
IEEE transactions on device and materials reliability 1 (2), 86-94, 2001
172001
Analysis of barrier inhomogeneities in AlGaN/GaN HEMTs' Schottky diodes by IVT measurements
S Karboyan, JG Tartarin, B Lambert
2013 European Microwave Integrated Circuit Conference, 240-243, 2013
162013
2 W mm− 1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz
MR Irekti, M Lesecq, N Defrance, E Okada, E Frayssinet, Y Cordier, ...
Semiconductor Science and Technology 34 (12), 12LT01, 2019
142019
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
B Lambert, N Labat, D Carisetti, S Karboyan, JG Tartarin, J Thorpe, ...
Microelectronics Reliability 52 (9-10), 2184-2187, 2012
132012
New approach for an accurate Schottky Barrier Height's extraction by IVT measurements
O Lazăr, JG Tartarin, B Lambert, C Moreau, JL Roux, JL Muraro
2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015
122015
Trapping related degradation effects in AlGaN/GaN HEMT
G Astre, JG Tartarin, B Lambert
The 5th European Microwave Integrated Circuits Conference, 298-301, 2010
122010
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