Alquier Daniel
Alquier Daniel
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Transient enhanced diffusion in preamorphized silicon: the role of the surface
NEB Cowern, D Alquier, M Omri, A Claverie, A Nejim
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
Transient enhanced diffusion of boron in presence of end-of-range defects
C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ...
Journal of applied physics 82 (6), 2855-2861, 1997
Organic/inorganic hybrid stretchable piezoelectric nanogenerators for self‐powered wearable electronics
AS Dahiya, F Morini, S Boubenia, K Nadaud, D Alquier, G Poulin‐Vittrant
Advanced Materials Technologies 3 (2), 1700249, 2018
Evidence of electrical activity of extended defects in 3C–SiC grown on Si
X Song, JF Michaud, F Cayrel, M Zielinski, M Portail, T Chassagne, ...
Applied Physics Letters 96 (14), 142104, 2010
The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
C Bonafos, A Claverie, D Alquier, C Bergaud, A Martinez, L Laanab, ...
Applied physics letters 71 (3), 365-367, 1997
Fabrication of ZnO nanowire based piezoelectric generators and related structures
C Opoku, AS Dahiya, C Oshman, F Cayrel, G Poulin-Vittrant, D Alquier, ...
Physics Procedia 70, 858-862, 2015
A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations
S Boubenia, AS Dahiya, G Poulin-Vittrant, F Morini, K Nadaud, D Alquier
Scientific reports 7 (1), 1-10, 2017
Elastic energy of strained islands: Contribution of the substrate as a function of the island aspect ratio and inter-island distance
A Ponchet, D Lacombe, L Durand, D Alquier, JM Cardonna
Applied physics letters 72 (23), 2984-2986, 1998
Effects of Si ion implantation and H plasma treatment on the growth of cavities in silicon
Chinese Physics C 28 (9), 1013-1016, 2004
Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects?
M Omri, C Bonafos, A Claverie, A Nejim, F Cristiano, D Alquier, A Martinez, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
Effects of hydrogen plasma treatment on cavity formation in silicon induced by He ion implantation
Chinese Physics C 29 (5), 524-529, 2005
Interactions between Dopants and End-of-Range Defects in Silicon
A Claverie, C Bonafos, A Martinez, D Alquier
Solid State Phenomena 47, 195-204, 1996
Single-crystalline ZnO sheet source-gated transistors
AS Dahiya, C Opoku, RA Sporea, B Sarvankumar, G Poulin-Vittrant, ...
Scientific reports 6 (1), 1-10, 2016
Optimization of the fabrication of sealed capacitive transducers using surface micromachining
B Belgacem, D Alquier, P Muralt, J Baborowski, S Lucas, R Jerisian
Journal of Micromechanics and Microengineering 14 (2), 299, 2003
Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires
C Opoku, AS Dahiya, F Cayrel, G Poulin-Vittrant, D Alquier, N Camara
RSC advances 5 (86), 69925-69931, 2015
Recent progresses in GaN power rectifier
D Alquier, F Cayrel, O Menard, AE Bazin, A Yvon, E Collard
Japanese Journal of Applied Physics 51 (1S), 01AG08, 2012
Fabrication and characterization of ZnO nanowire-based piezoelectric nanogenerators for low frequency mechanical energy harvesting
G Poulin-Vittrant, C Oshman, C Opoku, AS Dahiya, N Camara, D Alquier, ...
Physics Procedia 70, 909-913, 2015
Low stress heteroepitaxial 3C-SiC films characterized by microstructure fabrication and finite elements analysis
R Anzalone, M Camarda, C Locke, D Alquier, A Severino, M Italia, ...
Journal of The Electrochemical Society 157 (4), H438, 2010
Interstitial trapping efficiency of C+ implanted into preamorphised silicon—Control of EOR defects
F Cristiano, C Bonafos, A Nejim, S Lombardo, M Omri, D Alquier, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997
Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires
C Opoku, AS Dahiya, C Oshman, C Daumont, F Cayrel, G Poulin-Vittrant, ...
Nanotechnology 26 (35), 355704, 2015
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