| Electrically active defects in irradiated 4H-SiC ML David, G Alfieri, EM Monakhov, A Hallén, C Blanchard, BG Svensson, ... Journal of applied physics 95 (9), 4728-4733, 2004 | 94 | 2004 |
| Effect of implant temperature on defects created using high fluence of helium in silicon ML David, MF Beaufort, JF Barbot Journal of applied physics 93 (3), 1438-1442, 2003 | 54 | 2003 |
| Formation of bubbles by high dose He implantation in 4H–SiC E Oliviero, ML David, MF Beaufort, J Nomgaudyte, L Pranevicius, ... Journal of applied physics 91 (3), 1179-1186, 2002 | 46 | 2002 |
| Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2Tx MXenes H Pazniak, M Benchakar, T Bilyk, A Liedl, Y Busby, C Noël, P Chartier, ... ACS nano 15 (3), 4245-4255, 2021 | 41 | 2021 |
| On the effects of implantation temperature in helium implanted silicon E Oliviero, ML David, MF Beaufort, JF Barbot, A Van Veen Applied physics letters 81 (22), 4201-4203, 2002 | 41 | 2002 |
| In situ controlled modification of the helium density in single helium-filled nanobubbles ML David, K Alix, F Pailloux, V Mauchamp, M Couillard, GA Botton, ... Journal of Applied Physics 115 (12), 2014 | 39 | 2014 |
| In situ probing of helium desorption from individual nanobubbles under electron irradiation ML David, F Pailloux, V Mauchamp, L Pizzagalli Applied Physics Letters 98 (17), 2011 | 39 | 2011 |
| Helium implantation into 4H‐SiC JF Barbot, S Leclerc, ML David, E Oliviero, R Montsouka, F Pailloux, ... physica status solidi (a) 206 (8), 1916-1923, 2009 | 39 | 2009 |
| Molecular dynamics simulation of the initial stages of He bubbles formation in silicon L Pizzagalli, ML David, M Bertolus Modelling and Simulation in Materials Science and Engineering 21 (6), 065002, 2013 | 34 | 2013 |
| An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC A Declémy, E Oliviero, MF Beaufort, JF Barbot, ML David, C Blanchard, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 33 | 2002 |
| Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities ML David, E Simoen, C Claeys, V Neimash, M Kras’ko, A Kraitchinskii, ... Journal of Physics: Condensed Matter 17 (22), S2255, 2005 | 29 | 2005 |
| Is there an impact of threading dislocations on the characteristics of devices fabricated in strained‐Ge substrates? E Simoen, G Brouwers, R Yang, G Eneman, MB Gonzalez, F Leys, ... physica status solidi c 6 (8), 1912-1917, 2009 | 26 | 2009 |
| The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium ML David, F Pailloux, D Babonneau, M Drouet, JF Barbot, E Simoen, ... Journal of Applied Physics 102 (9), 2007 | 26 | 2007 |
| Evidence for two charge states of the S-center in ion-implanted 4H-SiC ML David, G Alfieri, EV Monakhov, A Hallén, JF Barbot, BG Svensson Materials Science Forum 433, 371-374, 2003 | 21 | 2003 |
| Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study J Dérès, ML David, K Alix, C Hébert, DTL Alexander, L Pizzagalli Physical Review B 96 (1), 014110, 2017 | 19 | 2017 |
| Gentle quantitative measurement of helium density in nanobubbles in silicon by spectrum imaging K Alix, ML David, G Lucas, DTL Alexander, F Pailloux, C Hébert, ... Micron 77, 57-65, 2015 | 19 | 2015 |
| Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c-axis JF Barbot, F Pailloux, ML David, L Pizzagalli, E Oliviero, G Lucas Journal of Applied Physics 104 (4), 2008 | 18 | 2008 |
| Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope K Alix, ML David, J Dérès, C Hébert, L Pizzagalli Physical Review B 97 (10), 104102, 2018 | 17 | 2018 |
| Atomic scale structure of (001) hydrogen-induced platelets in germanium ML David, L Pizzagalli, F Pailloux, JF Barbot Physical review letters 102 (15), 155504, 2009 | 16 | 2009 |
| Kinetic evolution of blistering in hydrogen-implanted silicon C Coupeau, G Parry, J Colin, ML David, J Labanowski, J Grilhé Applied Physics Letters 103 (3), 2013 | 15 | 2013 |
