David Marie-Laure
David Marie-Laure
Institut Pprime
Adresse e-mail validée de univ-poitiers.fr
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Electrically active defects in irradiated 4H-SiC
ML David, G Alfieri, EM Monakhov, A Hallén, C Blanchard, BG Svensson, ...
Journal of applied physics 95 (9), 4728-4733, 2004
692004
Effect of implant temperature on defects created using high fluence of helium in silicon
ML David, MF Beaufort, JF Barbot
Journal of applied physics 93 (3), 1438-1442, 2003
502003
Formation of bubbles by high dose He implantation in 4H–SiC
E Oliviero, ML David, MF Beaufort, J Nomgaudyte, L Pranevicius, ...
Journal of applied physics 91 (3), 1179-1186, 2002
402002
On the effects of implantation temperature in helium implanted silicon
E Oliviero, ML David, MF Beaufort, JF Barbot, A Van Veen
Applied physics letters 81 (22), 4201-4203, 2002
382002
In situ probing of helium desorption from individual nanobubbles under electron irradiation
ML David, F Pailloux, V Mauchamp, L Pizzagalli
Applied Physics Letters 98 (17), 171903, 2011
322011
An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC
A Declémy, E Oliviero, MF Beaufort, JF Barbot, ML David, C Blanchard, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
292002
Molecular dynamics simulation of the initial stages of He bubbles formation in silicon
L Pizzagalli, ML David, M Bertolus
Modelling and Simulation in Materials Science and Engineering 21 (6), 065002, 2013
272013
Helium implantation into 4H‐SiC
JF Barbot, S Leclerc, ML David, E Oliviero, R Montsouka, F Pailloux, ...
physica status solidi (a) 206 (8), 1916-1923, 2009
272009
Is there an impact of threading dislocations on the characteristics of devices fabricated in strained‐Ge substrates?
E Simoen, G Brouwers, R Yang, G Eneman, MB Gonzalez, F Leys, ...
physica status solidi c 6 (8), 1912-1917, 2009
252009
In situ controlled modification of the helium density in single helium-filled nanobubbles
ML David, K Alix, F Pailloux, V Mauchamp, M Couillard, GA Botton, ...
Journal of Applied Physics 115 (12), 123508, 2014
232014
The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium
ML David, F Pailloux, D Babonneau, M Drouet, JF Barbot, E Simoen, ...
Journal of Applied Physics 102 (9), 096101, 2007
222007
Evidence for two charge states of the S-center in ion-implanted 4H-SiC
ML David, G Alfieri, EV Monakhov, A Hallén, JF Barbot, BG Svensson
Materials Science Forum 433, 371-374, 2003
212003
Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
ML David, E Simoen, C Claeys, V Neimash, M Kras’ko, A Kraitchinskii, ...
Journal of Physics: Condensed Matter 17 (22), S2255, 2005
202005
Perception sociale de la maladie d'Alzheimer: les multiples facettes de l'oubli
SP Le Corre, S Benchiker, M David, C Deroche, S Louassarn, ...
Gérontologie et société 32 (1), 75-88, 2009
182009
Atomic scale structure of (001) hydrogen-induced platelets in germanium
ML David, L Pizzagalli, F Pailloux, JF Barbot
Physical review letters 102 (15), 155504, 2009
152009
Effect of pressure and stress on blistering induced by hydrogen implantation in silicon
C Coupeau, E Dion, ML David, J Colin, J Grilhé
EPL (Europhysics Letters) 92 (1), 16001, 2010
142010
Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the -axis
JF Barbot, F Pailloux, ML David, L Pizzagalli, E Oliviero, G Lucas
Journal of Applied Physics 104 (4), 043526, 2008
142008
Gentle quantitative measurement of helium density in nanobubbles in silicon by spectrum imaging
K Alix, ML David, G Lucas, DTL Alexander, F Pailloux, C Hébert, ...
Micron 77, 57-65, 2015
132015
Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study
J Dérès, ML David, K Alix, C Hébert, DTL Alexander, L Pizzagalli
Physical Review B 96 (1), 014110, 2017
122017
Kinetic evolution of blistering in hydrogen-implanted silicon
C Coupeau, G Parry, J Colin, ML David, J Labanowski, J Grilhé
Applied Physics Letters 103 (3), 031908, 2013
112013
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