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Saidi Chokri
Saidi Chokri
Faculté des Sciences de Monastir
Adresse e-mail validée de fsm.rnu.tn
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Growth of scandium doped GaN by MOVPE
C Saidi, N Chaaben, A Bchetnia, A Fouzri, N Sakly, B El Jani
Superlattices and Microstructures 60, 120-128, 2013
212013
Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures
N Chaaben, J Laifi, H Bouazizi, C Saidi, A Bchetnia, B El Jani
Materials Science in Semiconductor Processing 42, 359-363, 2016
182016
Characterizations of ZnO and Zn (1− x) CdxO thin films grown on Zn-and O-face ZnO substrates by metal organic chemical vapor deposition
MA Boukadhaba, A Fouzri, C Saidi, N Sakly, A Souissi, A Bchetnia, ...
Journal of crystal growth 395, 14-21, 2014
162014
Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry
A Bchetnia, C Saidi, M Souissi, T Boufaden, B El Jani
Semiconductor science and technology 24 (9), 095020, 2009
122009
Simulation of in situ reflectance-time during MOVPE of GaN on sapphire substrate
N Chaaben, H Bouazizi, C Saidi, A Bchetnia, B El Jani
Superlattices and Microstructures 64, 518-534, 2013
92013
Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates
J Laifi, C Saidi, N Chaaben, A Bchetnia, Y El Gmili, JP Salvestrini
Materials Science in Semiconductor Processing 101, 253-261, 2019
42019
Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN
C Saidi, N Chaaben, J Laifi, T Sekrafi, O Tottereau, A Bchetnia, B El Jani
Journal of Alloys and Compounds 625, 271-276, 2015
42015
Surface morphological properties of Cd
A Bchetnia, C Saidi, M Souissi
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