Growth of scandium doped GaN by MOVPE C Saidi, N Chaaben, A Bchetnia, A Fouzri, N Sakly, B El Jani Superlattices and Microstructures 60, 120-128, 2013 | 21 | 2013 |
Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures N Chaaben, J Laifi, H Bouazizi, C Saidi, A Bchetnia, B El Jani Materials Science in Semiconductor Processing 42, 359-363, 2016 | 18 | 2016 |
Characterizations of ZnO and Zn (1− x) CdxO thin films grown on Zn-and O-face ZnO substrates by metal organic chemical vapor deposition MA Boukadhaba, A Fouzri, C Saidi, N Sakly, A Souissi, A Bchetnia, ... Journal of crystal growth 395, 14-21, 2014 | 16 | 2014 |
Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry A Bchetnia, C Saidi, M Souissi, T Boufaden, B El Jani Semiconductor science and technology 24 (9), 095020, 2009 | 12 | 2009 |
Simulation of in situ reflectance-time during MOVPE of GaN on sapphire substrate N Chaaben, H Bouazizi, C Saidi, A Bchetnia, B El Jani Superlattices and Microstructures 64, 518-534, 2013 | 9 | 2013 |
Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates J Laifi, C Saidi, N Chaaben, A Bchetnia, Y El Gmili, JP Salvestrini Materials Science in Semiconductor Processing 101, 253-261, 2019 | 4 | 2019 |
Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN C Saidi, N Chaaben, J Laifi, T Sekrafi, O Tottereau, A Bchetnia, B El Jani Journal of Alloys and Compounds 625, 271-276, 2015 | 4 | 2015 |
Surface morphological properties of Cd A Bchetnia, C Saidi, M Souissi | | |