Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors S Ghose, S Rahman, L Hong, JS Rojas-Ramirez, H Jin, K Park, R Klie, ...
Journal of Applied Physics 122 (9), 2017
149 2017 Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy S Ghose, MS Rahman, JS Rojas-Ramirez, M Caro, R Droopad, A Arias, ...
Journal of Vacuum Science & Technology B 34 (2), 2016
73 2016 InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V) SW Chang, X Li, R Oxland, SW Wang, CH Wang, R Contreras-Guerrero, ...
2013 IEEE International Electron Devices Meeting, 16.1. 1-16.1. 4, 2013
47 2013 InAs hole inversion and bandgap interface state density of 2× 1011 cm− 2 eV− 1 at HfO2/InAs interfaces CH Wang, SW Wang, G Doornbos, G Astromskas, K Bhuwalka, ...
Applied Physics Letters 103 (14), 2013
38 2013 InAs FinFETs With R Oxland, X Li, SW Chang, SW Wang, T Vasen, P Ramvall, ...
IEEE Electron Device Letters 37 (3), 261-264, 2016
26 2016 Integration of BiFeO 3/La 0.7 Sr 0.3 MnO 3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors MS Rahman, S Ghose, L Hong, P Dhungana, A Fahami, JR Gatabi, ...
Journal of Materials Chemistry C 4 (43), 10386-10394, 2016
24 2016 InAs N-MOSFETs with record performance of Ion= 600 µA/µm at Ioff= 100 nA/µm (Vd= 0.5 V) SW Chang, X Li, R Oxland, SW Wang, CH Wang, R Contreras-Guerrero, ...
Proceedings of Technical Digest of the IEEE International Electron Devices …, 2013
23 2013 Structural, Optical, and Electrical Characterization of β -Ga2 O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing A Arias, N Nedev, S Ghose, JS Rojas-Ramirez, D Mateos, ...
Advances in Materials Science and Engineering 2018, 2018
20 2018 Tuning electrical properties of PZT film deposited by Pulsed Laser Deposition JR Gatabi, S Rahman, A Amaro, T Nash, J Rojas-Ramirez, RK Pandey, ...
Ceramics International 43 (8), 6008-6012, 2017
17 2017 Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon K Bhatnagar, MP Caro, JS Rojas-Ramirez, R Droopad, PM Thomas, ...
Journal of Vacuum Science & Technology B 33 (6), 2015
17 2015 Field-Effect Mobility of InAs Surface Channel nMOSFET With Low SW Wang, T Vasen, G Doornbos, R Oxland, SW Chang, X Li, ...
IEEE Transactions on Electron Devices 62 (8), 2429-2436, 2015
17 2015 Growth of heterostructures on InAs for high mobility device applications R Contreras-Guerrero, S Wang, M Edirisooriya, W Priyantha, ...
Journal of crystal growth 378, 117-120, 2013
17 2013 Temperature dependence of the photoluminescence emission from InxGa1− xAs quantum wells on GaAs (311) substrates JS Rojas-Ramírez, R Goldhahn, P Moser, J Huerta-Ruelas, ...
Journal of Applied Physics 104 (12), 2008
17 2008 Functional materials integrated on III–V semiconductors J Gatabi, K Lyon, S Rahman, M Caro, J Rojas-Ramirez, J Cott-Garcia, ...
Microelectronic Engineering 147, 117-121, 2015
16 2015 SIMS characterization of segregation in InAs/GaAs heterostructures S Gallardo, Y Kudriatsev, A Villegas, G Ramírez, R Asomoza, ...
Applied Surface Science 255 (4), 1341-1344, 2008
14 2008 Molecular beam epitaxial growth of GaAs on (631) oriented substrates E Cruz-Hernandez, A Pulzara-Mora, FJ Ramírez-Arenas, ...
Japanese journal of applied physics 44 (12L), L1556, 2005
13 2005 Lifting the off-state bandgap limit in InAs channel metal-oxide-semiconductor heterostructures of nanometer dimensions M Passlack, SW Wang, G Doornbos, CH Wang, R Contreras-Guerrero, ...
Applied Physics Letters 104 (22), 2014
10 2014 Photoreflectance study of InAs quantum dots on GaAs (n 1 1) substrates JS Rojas-Ramírez, A Pulzara-Mora, E Cruz-Hernández, A Perez-Centeno, ...
Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 139-143, 2006
10 2006 AlxIn1− xAsySb1− y alloys lattice matched to InAs (1 0 0) grown by molecular beam epitaxy JS Rojas-Ramirez, S Wang, R Contreras-Guerrero, M Caro, K Bhatnagar, ...
Journal of Crystal Growth 425, 33-38, 2015
9 2015 Study of optical properties of GaAsN layers prepared by molecular beam epitaxy A Pulzara-Mora, E Cruz-Hernandez, J Rojas-Ramirez, ...
Journal of crystal growth 301, 565-569, 2007
8 2007 