Baishun Yang
Baishun Yang
CSRC
Adresse e-mail validée de mails.jlu.edu.cn
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Tuning magnetism of monolayer MoS2 by doping vacancy and applying strain
H Zheng, B Yang, D Wang, R Han, X Du, Y Yan
Applied Physics Letters 104 (13), 132403, 2014
1652014
A first-principles study on the magnetic properties of nonmetal atom doped phosphorene monolayers
H Zheng, J Zhang, B Yang, X Du, Y Yan
Physical Chemistry Chemical Physics 17 (25), 16341-16350, 2015
642015
Magnon Valve Effect between Two Magnetic Insulators
XFH H. Wu, L. Huang, C. Fang, B. S. Yang, C. H. Wan, G. Q. Yu, J. F. Feng, H ...
PHYSICAL REVIEW LETTERS 120, 097205, 2018
632018
Strain induced enhancement of perpendicular magnetic anisotropy in Co/graphene and Co/BN heterostructures
BS Yang, J Zhang, LN Jiang, WZ Chen, P Tang, XG Zhang, Y Yan, ...
Physical Review B 95 (17), 174424, 2017
522017
Curvature-enhanced spin-orbit coupling and spinterface effect in fullerene-based spin valves
S Liang, R Geng, B Yang, W Zhao, RC Subedi, X Li, X Han, TD Nguyen
Scientific reports 6 (1), 1-9, 2016
502016
Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Q Xie, W Lin, B Yang, X Shu, S Chen, L Liu, X Yu, MBH Breese, T Zhou, ...
Advanced Materials 31 (21), 1900776, 2019
312019
Tuning the magnetism of a ZrS 2 monolayer by substitutional doping
B Yang, H Zheng, R Han, X Du, Y Yan
RSC Advances 4 (97), 54335-54343, 2014
292014
Large magnetic anisotropy and strain induced enhancement of magnetic anisotropy in monolayer TaTe 2
J Zhang, B Yang, H Zheng, X Han, Y Yan
Physical Chemistry Chemical Physics 19 (35), 24341-24347, 2017
252017
Tunable dielectric properties induced by optical fields in barium strontium titanate/manganite heterostructures
KX Jin, B Yang, Y Zhang, BC Luo, LY Chen, CL Chen
Scripta Materialia 112, 62-66, 2016
222016
Strain controlling transport properties of heterostructure composed of monolayer CrI3
B Yang, X Zhang, H Yang, X Han, Y Yan
Applied Physics Letters 114 (19), 192405, 2019
192019
First-principles study of perpendicular magnetic anisotropy in ferrimagnetic D022-Mn3X (X = Ga, Ge) on MgO and SrTiO3
BS Yang, LN Jiang, WZ Chen, P Tang, J Zhang, XG Zhang, Y Yan, ...
Applied Physics Letters 112 (14), 142403, 2018
182018
Ultrahigh tunneling magnetoresistance ratio in nitride based perpendicular magnetic tunnel junctions
B Yang, L Tao, L Jiang, W Chen, P Tang, Y Yan
Phys. Rev. Applied 9, 054019, 2018
142018
Nonmetallic atoms induced magnetic anisotropy in monolayer chromium trihalides
B Yang, X Zhang, H Yang, X Han, Y Yan
The Journal of Physical Chemistry C 123 (1), 691-697, 2018
132018
Strain induced modulation to the magnetism of antisite defects doped monolayer MoS2
H Zheng, B Yang, H Wang, Z Chen, Y Yan
Journal of Magnetism and Magnetic Materials 386, 155-160, 2015
122015
Reversible control of Dzyaloshinskii-Moriya interaction at the graphene/Co interface via hydrogen absorption
B Yang, Q Cui, J Liang, M Chshiev, H Yang
Physical Review B 101 (1), 014406, 2020
82020
Determination of spin relaxation times in heavy metals via second-harmonic spin injection magnetoresistance
XMLZMJ C. Fang, C. H. Wan, B. S. Yang, J. Y. Qin, B. S. Tao, H. Wu, X. Zhang ...
Physical Review B 96, 134421, 2017
82017
Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface
W Lin, B Yang, AP Chen, X Wu, R Guo, S Chen, L Liu, Q Xie, X Shu, Y Hui, ...
Physical Review Letters 124 (21), 217202, 2020
72020
Enhanced tunneling electroresistance in multiferroic tunnel junctions due to the reversible modulation of orbitals overlap
L Jiang, LL Tao, BS Yang, J Wang, XF Han
Applied Physics Letters 109 (19), 192902, 2016
72016
Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction
F Li, B Yang, Y Zhu, X Han, Y Yan
Applied Surface Science 505, 144648, 2020
62020
Giant enhancement of perpendicular magnetic anisotropy and induced quantum anomalous Hall effect in graphene/ heterostructures via tuning the van der …
Q Cui, J Liang, B Yang, Z Wang, P Li, P Cui, H Yang
Physical Review B 101 (21), 214439, 2020
52020
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