Julien PERNOT
Julien PERNOT
Université Grenoble Alpes - Institut Néel - CNRS
Adresse e-mail validée de neel.cnrs.fr
Titre
Citée par
Citée par
Année
Metal-insulator transition and superconductivity in boron-doped diamond
T Klein, P Achatz, J Kacmarcik, C Marcenat, F Gustafsson, J Marcus, ...
Physical Review B 75 (16), 165313, 2007
1892007
Electrical transport in n-type 4H silicon carbide
J Pernot, W Zawadzki, S Contreras, JL Robert, E Neyret, L Di Cioccio
Journal of Applied Physics 90 (4), 1869-1878, 2001
1252001
High hole mobility in boron doped diamond for power device applications
PN Volpe, J Pernot, P Muret, F Omnès
Applied Physics Letters 94 (9), 092102, 2009
1182009
Extreme dielectric strength in boron doped homoepitaxial diamond
PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ...
Applied Physics Letters 97 (22), 223501, 2010
1102010
Hall hole mobility in boron-doped homoepitaxial diamond
J Pernot, PN Volpe, F Omnès, P Muret, V Mortet, K Haenen, T Teraji
Physical Review B 81 (20), 205203, 2010
1102010
Zr/oxidized diamond interface for high power Schottky diodes
A Traore, P Muret, A Fiori, D Eon, E Gheeraert, J Pernot
Applied Physics Letters 104 (5), 052105, 2014
1022014
Electrical transport properties of aluminum-implanted 4H–SiC
J Pernot, S Contreras, J Camassel
Journal of applied physics 98 (2), 023706, 2005
802005
Activation of aluminum implanted at high doses in 4H–SiC
JM Bluet, J Pernot, J Camassel, S Contreras, JL Robert, JF Michaud, ...
Journal of Applied Physics 88 (4), 1971-1977, 2000
732000
Direct imaging of p–n junction in core–shell GaN wires
P Tchoulfian, F Donatini, F Levy, A Dussaigne, P Ferret, J Pernot
Nano letters 14 (6), 3491-3498, 2014
652014
Free electron density and mobility in high-quality 4H–SiC
J Pernot, S Contreras, J Camassel, JL Robert, W Zawadzki, E Neyret, ...
Applied Physics Letters 77 (26), 4359-4361, 2000
612000
Si donor incorporation in GaN nanowires
Z Fang, E Robin, E Rozas-Jiménez, A Cros, F Donatini, N Mollard, ...
Nano letters 15 (10), 6794-6801, 2015
582015
Hall electron mobility in diamond
J Pernot, C Tavares, E Gheeraert, E Bustarret, M Katagiri, S Koizumi
Applied physics letters 89 (12), 122111, 2006
552006
Metal oxide semiconductor structure using oxygen-terminated diamond
G Chicot, A Maréchal, R Motte, P Muret, E Gheeraert, J Pernot
Applied Physics Letters 102 (24), 242108, 2013
492013
Carrier depletion and exciton diffusion in a single ZnO nanowire
JS Hwang, F Donatini, J Pernot, R Thierry, P Ferret, LS Dang
Nanotechnology 22 (47), 475704, 2011
472011
Electron mobility in phosphorous doped {111} homoepitaxial diamond
J Pernot, S Koizumi
Applied Physics Letters 93 (5), 052105, 2008
442008
Hole transport in boron delta-doped diamond structures
G Chicot, TN Tran Thi, A Fiori, F Jomard, E Gheeraert, E Bustarret, ...
Applied Physics Letters 101 (16), 162101, 2012
422012
Electrical resistivity and metal-nonmetal transition in n-type doped 4 H− SiC
AF Da Silva, J Pernot, S Contreras, BE Sernelius, C Persson, J Camassel
Physical Review B 74 (24), 245201, 2006
402006
Study of boron doping in MPCVD grown homoepitaxial diamond layers based on cathodoluminescence spectroscopy, secondary ion mass spectroscopy and capacitance–voltage measurements
F Omnès, P Muret, PN Volpe, M Wade, J Pernot, F Jomard
Diamond and related materials 20 (7), 912-916, 2011
392011
High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer
PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, F Jomard, D Planson, ...
physica status solidi (a) 207 (9), 2088-2092, 2010
362010
Power Electronics Device Applications of Diamond Semiconductors
S Koizumi, H Umezawa, J Pernot, M Suzuki
Woodhead publishing, 2018
322018
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20