State of the art of high temperature power electronics C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ...
Materials Science and Engineering: B 176 (4), 283-288, 2011
436 2011 Silica films on silicon carbide: a review of electrical properties and device applications C Raynaud
Journal of Non-Crystalline Solids 280 (1-3), 1-31, 2001
186 2001 Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices C Raynaud, D Tournier, H Morel, D Planson
Diamond and related materials 19 (1), 1-6, 2010
140 2010 Thermal stability of silicon carbide power diodes C Buttay, C Raynaud, H Morel, G Civrac, ML Locatelli, F Morel
IEEE Transactions on electron devices 59 (3), 761-769, 2012
103 2012 Die attach of power devices using silver sintering-bonding process optimization and characterization C Buttay, A Masson, J Li, MC Johnson, M Lazar, C Raynaud, H Morel
HiTEN 2011, 1-7, 2011
87 2011 Barrier height determination of SiC Schottky diodes by capacitance and current–voltage measurements C Raynaud, K Isoird, M Lazar, CM Johnson, N Wright
Journal of applied physics 91 (12), 9841-9847, 2002
69 2002 Deep SiC etching with RIE M Lazar, H Vang, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ...
Superlattices and microstructures 40 (4-6), 388-392, 2006
68 2006 Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy NS Savkina, AA Lebedev, DV Davydov, AM Strel'Chuk, AS Tregubova, ...
Materials Science and Engineering: B 77 (1), 50-54, 2000
67 2000 Ni–Al ohmic contact to p-type 4H-SiC H Vang, M Lazar, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ...
Superlattices and microstructures 40 (4-6), 626-631, 2006
52 2006 Electrical characterization of instabilities in 6H silicon carbide metal‐oxide‐semiconductor capacitors C Raynaud, JL Autran, B Balland, G Guillot, C Jaussaud, T Billon
Journal of applied physics 76 (2), 993-997, 1994
41 1994 High temperature characterization of SiC-JFET and modelling R Mousa, D Planson, H Morel, C Raynaud
2007 European Conference on Power Electronics and Applications, 1-10, 2007
33 2007 High-temperature die-attaches for SiC power devices A Masson, C Buttay, H Morel, C Raynaud, S Hascoët, L Gremillard
Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011
32 2011 Modeling and high temperature characterization of SiC-JFET R Mousa, D Planson, H Morel, B Allard, C Raynaud
2008 IEEE Power Electronics Specialists Conference, 3111-3117, 2008
32 2008 A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3 SiC2 Phase T Abi-Tannous, M Soueidan, G Ferro, M Lazar, C Raynaud, B Toury, ...
IEEE Transactions on Electron Devices 63 (6), 2462-2468, 2016
31 2016 Experimental determination of impact ionization coefficients in 4H-SiC DM Nguyen, C Raynaud, N Dheilly, M Lazar, D Tournier, P Brosselard, ...
Diamond and related materials 20 (3), 395-397, 2011
31 2011 Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts T Zhang, C Raynaud, D Planson
The European Physical Journal Applied Physics 85 (1), 10102, 2019
30 2019 Optical triggering of SiC thyristors using UV LEDs N Dheilly, G Pâques, S Scharnholz, P Bevilacqua, C Raynaud, ...
Electronics letters 47 (7), 459-460, 2011
30 2011 Determination of ionization energies of the nitrogen donors in 6H‐SiC by admittance spectroscopy C Raynaud, F Ducroquet, G Guillot, LM Porter, RF Davis
Journal of applied physics 76 (3), 1956-1958, 1994
27 1994 Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of M Lazar, C Raynaud, D Planson, JP Chante, ML Locatelli, L Ottaviani, ...
Journal of applied physics 94 (5), 2992-2998, 2003
26 2003 Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC. R Nipoti, F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, M Lazar, ...
MRS Online Proceedings Library (OPL) 742, K6. 2, 2002
26 2002 