Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity HY Lan, YH Hsieh, ZY Chiao, D Jariwala, MH Shih, TJ Yen, O Hess, YJ Lu Nano Letters 21 (7), 3083-3091, 2021 | 81 | 2021 |
High-speed integrated micro-LED array for visible light communication HY Lan, IC Tseng, YH Lin, GR Lin, DW Huang, CH Wu Optics letters 45 (8), 2203-2206, 2020 | 56 | 2020 |
752-MHz modulation bandwidth of high-speed blue micro light-emitting diodes HY Lan, IC Tseng, HY Kao, YH Lin, GR Lin, CH Wu IEEE Journal of Quantum Electronics 54 (5), 1-6, 2018 | 42 | 2018 |
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices CC Chiang, HY Lan, CS Pang, J Appenzeller, Z Chen IEEE Electron Device Letters 43 (2), 319-322, 2021 | 35 | 2021 |
Plasmon-enhanced solar-driven hydrogen evolution using titanium nitride metasurface broadband absorbers MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HW Howard Lee, ... Acs Photonics 8 (11), 3125-3132, 2021 | 32 | 2021 |
Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOxInterfacial Layer HY Lan, VP Oleshko, AV Davydov, J Appenzeller, Z Chen IEEE Transactions on Electron Devices 70 (4), 2067-2074, 2023 | 7 | 2023 |
Dielectric Interface Engineering for High-Performance Monolayer MoS₂ Transistors via hBN Interfacial Layer and Ta Seeding HY Lan, J Appenzeller, Z Chen 2022 International Electron Devices Meeting (IEDM), 7.7. 1-7.7. 4, 2022 | 5 | 2022 |
Characteristics of blue GaN/InGaN quantum-well light-emitting transistor HY Lan, IC Tseng, YH Lin, SW Chang, CH Wu IEEE Electron Device Letters 41 (1), 91-94, 2019 | 5 | 2019 |
High-Performance Complementary Circuits from Two-Dimensional MoTe2 J Cai, Z Sun, P Wu, R Tripathi, HY Lan, J Kong, Z Chen, J Appenzeller Nano Letters 23 (23), 10939-10945, 2023 | 1 | 2023 |
Design and Process Co-Optimization of 2-D Monolayer Transistors via Machine Learning CC Chiang, HY Lan, L Liu, YP Chen, D Zemlyanov, J Appenzeller, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
Plasmon-enhanced solar-driven hydrogen evolution using plasmonic metasurface broadband absorbers TY Peng, MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HWH Lee, ... Conference on Lasers and Electro-Optics/Pacific Rim, P_CM16_13, 2022 | 1 | 2022 |
Reliability of High-Performance Monolayer MoS2 Transistors on Scaled High-κ HfO2 Z Chen, HY Lan, SH Yang, R Tripathi, J Appenzeller | | 2024 |
Unconventional Spin Hall Effect in Low Symmetry Semimetal for Large Spin-Orbit Readout Unit R Tripathi, HY Lan, P Debashis, H Li, M DC, X Liu, J Cai, ST Konakanchi, ... Bulletin of the American Physical Society, 2024 | | 2024 |
Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 μA/μm Ion and 490 μS/ μm gmax via Hybrid Charge Transfer and Molecular Doping HY Lan, R Tripathi, X Liu, J Appenzeller, Z Chen 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
Broadband Plasmonic Perfect Absorbers using Titanium Nitride Metasurface for Efficient Solar Hydrogen Generation MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HW Howard Lee, ... American Chemical Society (ACS), 2021 | | 2021 |
Visible plasmonic perfect absorber based on titanium nitride metamaterial T Watanabe, MJ Yu, HY Lan, M Haraguchi, YJ Lu Plasmonics: Design, Materials, Fabrication, Characterization, and …, 2020 | | 2020 |
Lithography method HY Lan, PC Cheng, CJ Huang, TC Fu, TY Lee US Patent 10684561B2, 2020 | | 2020 |
Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors IC Tseng, HY Lan, CH Wu 2017 International Conference on Electron Devices and Solid-State Circuits …, 2017 | | 2017 |
Design, Fabrication, and Characterization of High-Speed Blue Light-Emitting Diodes and Light-Emitting Transistors HY Lan National Taiwan University, 2017 | | 2017 |
Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 µA/µm ION and 490 µS/µm gmax via Hybrid Charge Transfer and Molecular Doping HY Lan, R Tripathi, X Liu, J Appenzeller, Z Chen | | |