Nikos Pelekanos
Nikos Pelekanos
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Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
F Widmann, J Simon, B Daudin, G Feuillet, JL Rouviere, NT Pelekanos, ...
Physical Review B 58 (24), R15989, 1998
Growth kinetics and optical properties of self-organized GaN quantum dots
F Widmann, B Daudin, G Feuillet, Y Samson, JL Rouviere, N Pelekanos
Journal of Applied Physics 83 (12), 7618-7624, 1998
A GaAs polariton light-emitting diode operating near room temperature
SI Tsintzos, NT Pelekanos, G Konstantinidis, Z Hatzopoulos, PG Savvidis
Nature 453 (7193), 372-375, 2008
Giant electric fields in unstrained GaN single quantum wells
R Langer, J Simon, V Ortiz, NT Pelekanos, A Barski, R Andre, ...
Applied physics letters 74 (25), 3827-3829, 1999
Quasi-two-dimensional excitons in (Zn, Cd) Se/ZnSe quantum wells: Reduced exciton–LO-phonon coupling due to confinement effects
NT Pelekanos, J Ding, M Hagerott, AV Nurmikko, H Luo, N Samarth, ...
Physical Review B 45 (11), 6037, 1992
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
J Simon, NT Pelekanos, C Adelmann, E Martínez-Guerrero, R André, ...
Physical Review B 68 (3), 035312, 2003
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
C Adelmann, J Simon, G Feuillet, NT Pelekanos, B Daudin, G Fishman
Applied Physics Letters 76 (12), 1570-1572, 2000
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
F Widmann, B Daudin, G Feuillet, N Pelekanos, JL Rouviere
Applied physics letters 73 (18), 2642-2644, 1998
Zinc‐blende MnTe: Epilayers and quantum well structures
SM Durbin, J Han, S O, M Kobayashi, DR Menke, RL Gunshor, Q Fu, ...
Applied physics letters 55 (20), 2087-2089, 1989
Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations
JL Rouviere, J Simon, N Pelekanos, B Daudin, G Feuillet
Applied physics letters 75 (17), 2632-2634, 1999
Room‐temperature exciton absorption in (Zn, Cd) Se/ZnSe quantum wells at blue‐green wavelengths
J Ding, N Pelekanos, AV Nurmikko, H Luo, N Samarth, JK Furdyna
Applied physics letters 57 (27), 2885-2887, 1990
Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy
E Martínez-Guerrero, C Adelmann, F Chabuel, J Simon, NT Pelekanos, ...
Applied Physics Letters 77 (6), 809-811, 2000
High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy
R Langer, A Barski, J Simon, NT Pelekanos, O Konovalov, R Andre, ...
Applied physics letters 74 (24), 3610-3612, 1999
Spontaneous polarization effects in quantum wells
J Simon, R Langer, A Barski, NT Pelekanos
Physical Review B 61 (11), 7211, 2000
Micro-Raman characterization of heterostructures
AG Kontos, YS Raptis, NT Pelekanos, A Georgakilas, E Bellet-Amalric, ...
Physical Review B 72 (15), 155336, 2005
InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy
E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ...
physica status solidi (a) 203 (1), 102-105, 2006
Room temperature GaAs exciton-polariton light emitting diode
SI Tsintzos, PG Savvidis, G Deligeorgis, Z Hatzopoulos, NT Pelekanos
Applied Physics Letters 94 (7), 071109, 2009
All-dielectric GaN microcavity: Strong coupling and lasing at room temperature
KS Daskalakis, PS Eldridge, G Christmann, E Trichas, R Murray, ...
Applied Physics Letters 102 (10), 101113, 2013
Tunneling dynamics in CdTe/(Cd, Zn) Te asymmetric double-quantum-well structures
S Haacke, NT Pelekanos, H Mariette, M Zigone, AP Heberle, WW Rühle
Physical Review B 47 (24), 16643, 1993
Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
M Hocevar, LT Thanh Giang, R Songmuang, M den Hertog, L Besombes, ...
Applied Physics Letters 102 (19), 191103, 2013
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