| Effect of band-to-band tunneling on junctionless transistors S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ... IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012 | 232 | 2012 |
| CMOS logic device and circuit performance of Si gate all around nanowire MOSFET K Nayak, M Bajaj, A Konar, PJ Oldiges, K Natori, H Iwai, KVRM Murali, ... Electron Devices, IEEE Transactions on 61 (9), 3066 - 3074, 2014 | 76 | 2014 |
| Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors A Konar, J Mathew, K Nayak, M Bajaj, RK Pandey, S Dhara, K Murali, ... Nano letters 15 (3), 1684–1690, 2015 | 63 | 2015 |
| Random Dopant Fluctuation Induced Variability in Undoped Channel Si Gate All Around Nanowire n-MOSFET K Nayak, S Agarwal, M Bajaj, KVRM Murali, VR Rao Electron Devices, IEEE Transactions on 62 (2), 685 - 688, 2015 | 58 | 2015 |
| Brownian dynamics simulation of polymer collapse in a poor solvent: Influence of implicit hydrodynamic interactions TT Pham, M Bajaj, JR Prakash Soft Matter 4 (6), 1196-1207, 2008 | 55 | 2008 |
| Multiscale simulation of viscoelastic free surface flows M Bajaj, PP Bhat, JR Prakash, M Pasquali Journal of non-newtonian fluid mechanics 140 (1-3), 87-107, 2006 | 41 | 2006 |
| Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs K Nayak, S Agarwal, M Bajaj, PJ Oldiges, KVRM Murali, VR Rao Electron Devices, IEEE Transactions on 61 (11), 3892 - 3895, 2014 | 39 | 2014 |
| Coil-stretch transition and the breakdown of computations for viscoelastic fluid flow around a confined cylinder M Bajaj, M Pasquali, JR Prakash Journal of Rheology 52 (1), 197-223, 2008 | 37 | 2008 |
| A computational study of the effect of viscoelasticity on slot coating flow of dilute polymer solutions M Bajaj, JR Prakash, M Pasquali Journal of non-newtonian fluid mechanics 149 (1-3), 104-123, 2008 | 34 | 2008 |
| Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability S Agarwal, RK Pandey, JB Johnson, A Dixit, M Bajaj, SS Furkay, ... Electron Devices, IEEE Transactions on 60 (9), 2728 - 2733, 2013 | 28 | 2013 |
| Viscoelastic flow in a two-dimensional collapsible channel D Chakraborty, M Bajaj, L Yeo, J Friend, M Pasquali, JR Prakash Journal of non-newtonian fluid mechanics 165 (19-20), 1204-1218, 2010 | 24 | 2010 |
| Process optimizations for NBTI/PBTI for future replacement metal gate technologies BP Linder, A Dasgupta, T Ando, E Cartier, U Kwon, R Southwick, M Wang, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4B-1-1-4B-1-5, 2016 | 20 | 2016 |
| Negative differential conductivity and carrier heating in gate-all-around Si nanowire FETs and its impact on CMOS logic circuits K Nayak, M Bajaj, A Konar, PJ Oldiges, H Iwai, K Murali, VR Rao Japanese Journal of Applied Physics 53 (4S), 04EC16, 2014 | 18 | 2014 |
| Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies SO Koswatta, N Mavilla, M Bajaj, J Johnson, S Gundapaneni, C Scott, ... 2015 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2015 | 15 | 2015 |
| Stable work function for narrow-pitch devices T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan US Patent 9,583,486, 2017 | 14 | 2017 |
| Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability M Bajaj, K Nayak, S Gundapaneni, VR Rao Nanotechnology, IEEE Transactions on, 2016 | 14 | 2016 |
| Semiconductor device with a stoichiometric gradient M Bajaj, GW Burr, KVRM Murali, RK Pandey, R Sathiyanarayanan, ... US Patent 9,589,635, 2017 | 13 | 2017 |
| Gate strain induced work function engineering M Bajaj, KVRM Murali, R Nayak, EJ Nowak, RK Pandey US Patent 9,105,498, 2015 | 13 | 2015 |
| Critical analysis of 14nm device options P Oldiges, R Muralidhar, P Kulkarni, CH Lin, K Xiu, D Guo, M Bajaj, ... 2011 International Conference on Simulation of Semiconductor Processes and …, 2011 | 13 | 2011 |
| Characterization and optimization of charge trapping in high-k dielectrics E Cartier, T Ando, M Hopstaken, V Narayanan, R Krishnan, JF Shepard, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5A. 2.1-5A. 2.7, 2013 | 12 | 2013 |
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