| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 159 | 2020 |
| Amorphous metal–organic framework‐dominated nanocomposites with both compositional and structural heterogeneity for oxygen evolution C Liu, J Wang, J Wan, Y Cheng, R Huang, C Zhang, W Hu, G Wei, C Yu Angewandte Chemie International Edition 59 (9), 3630-3637, 2020 | 150 | 2020 |
| Si–Sb–Te materials for phase change memory applications F Rao, Z Song, K Ren, X Zhou, Y Cheng, L Wu, B Liu Nanotechnology 22 (14), 145702, 2011 | 116 | 2011 |
| Core–shell prussian blue analogs with compositional heterogeneity and open cages for oxygen evolution reaction W Zhang, H Song, Y Cheng, C Liu, C Wang, MAN Khan, H Zhang, J Liu, ... Advanced Science 6 (7), 1801901, 2019 | 100 | 2019 |
| Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film Y Cheng, Z Gao, KH Ye, HW Park, Y Zheng, Y Zheng, J Gao, MH Park, ... Nature communications 13 (1), 645, 2022 | 92 | 2022 |
| Direct observation of metastable face-centered cubic Sb2Te3 crystal Y Zheng, M Xia, Y Cheng, F Rao, K Ding, W Liu, Y Jia, Z Song, S Feng Nano Research 9, 3453-3462, 2016 | 87 | 2016 |
| Ti–Sb–Te Alloy: A candidate for fast and long-life phase-change memory M Xia, M Zhu, Y Wang, Z Song, F Rao, L Wu, Y Cheng, S Song ACS applied materials & interfaces 7 (14), 7627-7634, 2015 | 80 | 2015 |
| Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory Q Wang, B Liu, Y Xia, Y Zheng, R Huo, Q Zhang, S Song, Y Cheng, ... Applied Physics Letters 107 (22), 2015 | 64 | 2015 |
| Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory Y Wang, Y Zheng, G Liu, T Li, T Guo, Y Cheng, S Lv, S Song, K Ren, ... Applied Physics Letters 112 (13), 2018 | 63 | 2018 |
| Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3. 5Sb2Te3 materials F Rao, Z Song, Y Cheng, M Xia, K Ren, L Wu, B Liu, S Feng Acta materialia 60 (1), 323-328, 2012 | 62 | 2012 |
| A candidate Zr-doped Sb2Te alloy for phase change memory application Y Zheng, Y Cheng, M Zhu, X Ji, Q Wang, S Song, Z Song, W Liu, S Feng Applied Physics Letters 108 (5), 2016 | 59 | 2016 |
| Direct observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material F Rao, Z Song, Y Cheng, X Liu, M Xia, W Li, K Ding, X Feng, M Zhu, ... Nature communications 6 (1), 10040, 2015 | 58 | 2015 |
| Understanding the Effect of Al Doping on the Electrochemical Performance Improvement of the LiMn2O4 Cathode Material W Xu, Y Zheng, Y Cheng, R Qi, H Peng, H Lin, R Huang ACS Applied Materials & Interfaces 13 (38), 45446-45454, 2021 | 48 | 2021 |
| Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5 Y Zheng, Y Wang, T Xin, Y Cheng, R Huang, P Liu, M Luo, Z Zhang, S Lv, ... Communications Chemistry 2 (1), 13, 2019 | 44 | 2019 |
| The investigations of characteristics of Sb2Te as a base phase-change material G Liu, L Wu, M Zhu, Z Song, F Rao, S Song, Y Cheng Solid-State Electronics 135, 31-36, 2017 | 44 | 2017 |
| Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory X Zhou, L Wu, Z Song, Y Cheng, F Rao, K Ren, S Song, B Liu, S Feng Acta materialia 61 (19), 7324-7333, 2013 | 42 | 2013 |
| HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability Y Peng, W Xiao, Y Liu, C Jin, X Deng, Y Zhang, F Liu, Y Zheng, Y Cheng, ... IEEE Electron Device Letters 43 (2), 216-219, 2021 | 41 | 2021 |
| Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe Z Guan, Y Zhao, X Wang, N Zhong, X Deng, Y Zheng, J Wang, D Xu, ... ACS nano 16 (1), 1308-1317, 2022 | 40 | 2022 |
| Hybrid 1T e-DRAM and e-NVM realized in one 10 nm node ferro FinFET device with charge trapping and domain switching effects Q Luo, T Gong, Y Cheng, Q Zhang, H Yu, J Yu, H Ma, X Xu, K Huang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2018 | 39 | 2018 |
| Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials Y Cheng, Z Song, Y Gu, S Song, F Rao, L Wu, B Liu, S Feng Applied Physics Letters 99 (26), 2011 | 39 | 2011 |
Yonghui ZhengEast China Normal UniversityAdresse e-mail validée de phy.ecnu.edu.cn
