Improving performance of organic solar cells using amorphous tungsten oxides as an interfacial buffer layer on transparent anodes S Han, WS Shin, M Seo, D Gupta, SJ Moon, S Yoo
Organic Electronics 10 (5), 791-797, 2009
310 2009 First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications M Seo, MH Kang, SB Jeon, H Bae, J Hur, BC Jang, S Yun, S Cho, WK Kim, ...
IEEE Electron Device Letters 39 (9), 1445-1448, 2018
140 2018 Mimicry of excitatory and inhibitory artificial neuron with leaky integrate-and-fire function by a single MOSFET JK Han, M Seo, WK Kim, MS Kim, SY Kim, MS Kim, GJ Yun, GB Lee, ...
IEEE Electron Device Letters 41 (2), 208-211, 2019
70 2019 Realization of efficient semitransparent organic photovoltaic cells with metallic top electrodes: utilizing the tunable absorption asymmetry D Han, H Kim, S Lee, M Seo, S Yoo
Optics express 18 (104), A513-A521, 2010
52 2010 All‐solid‐state ion synaptic transistor for Wafer‐scale integration with electrolyte of a nanoscale thickness JM Yu, C Lee, DJ Kim, H Park, JK Han, J Hur, JK Kim, MS Kim, M Seo, ...
Advanced Functional Materials 31 (23), 2010971, 2021
45 2021 A Recoverable Synapse Device Using a Three‐Dimensional Silicon Transistor J Hur, BC Jang, J Park, DI Moon, H Bae, JY Park, GH Kim, SB Jeon, ...
Advanced Functional Materials 28 (47), 1804844, 2018
37 2018 Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments KM Hwang, JY Park, H Bae, SW Lee, CK Kim, M Seo, H Im, DH Kim, ...
ACS nano 11 (12), 12547-12552, 2017
37 2017 Bioinspired polydopamine‐based resistive‐switching memory on cotton fabric for wearable neuromorphic device applications H Bae, D Kim, M Seo, IK Jin, SB Jeon, HM Lee, SH Jung, BC Jang, G Son, ...
Advanced Materials Technologies 4 (8), 1900151, 2019
36 2019 A single transistor neuron with independently accessed double-gate for excitatory-inhibitory function and tunable firing threshold voltage JK Han, M Seo, JM Yu, YJ Suh, YK Choi
IEEE Electron Device Letters 41 (8), 1157-1160, 2020
27 2020 Tungsten oxide as a buffer layer inserted at the SnO2/pa-SiC interface of pin-type amorphous silicon based solar cells L Fang, SJ Baik, KS Lim, SH Yoo, MS Seo, SJ Kang, J Won Seo
Applied Physics Letters 96 (19), 2010
20 2010 Fullerene‐Derivative‐Embedded Nanogap Field‐Effect‐Transistor and Its Nonvolatile Memory Application SW Ryu, CJ Kim, S Kim, M Seo, C Yun, S Yoo, YK Choi
small 6 (15), 1617-1621, 2010
17 2010 Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC – Characterization DH Kim, SK Lim, H Bae, CK Kim, SW Lee, M Seo, SY Kim, KM Hwang, ...
IEEE Transactions on Electron Devices 65 (4), 1640-1644, 2018
15 2018 Comprehensive study on the relation between low-frequency noise and asymmetric parasitic resistances in a vertical pillar-type FET SW Lee, T Bang, CK Kim, KM Hwang, BC Jang, DI Moon, H Bae, M Seo, ...
IEEE Electron Device Letters 38 (8), 1008-1011, 2017
8 2017 Synaptic segmented transistor with improved linearity by Schottky junctions and accelerated speed by double-layered nitride SY Kim, JM Yu, GS Lee, DH Yun, MS Kim, JK Kim, DJ Kim, GB Lee, ...
ACS Applied Materials & Interfaces 14 (28), 32261-32269, 2022
6 2022 Electro-Thermal Erasing at 104 -Fold Faster Speeds in Charge-Trap Flash Memory MS Kim, DC Ahn, JY Park, M Seo, SY Kim, WK Kim, DH Yun, YK Choi
IEEE Electron Device Letters 40 (2), 196-199, 2018
6 2018 Effect of annealing temperature on minimum domain size of ferroelectric hafnia S Yun, H Kim, M Seo, MH Kang, T Kim, S Cho, MH Park, S Jeon, YK Choi, ...
ACS Applied Electronic Materials 6 (4), 2134-2141, 2024
5 2024 Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs SJ Han, JK Han, MS Kim, GJ Yun, JM Yu, IW Tcho, M Seo, GB Lee, ...
Scientific reports 11 (1), 13018, 2021
4 2021 A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET MS Kim, GJ Yun, WK Kim, M Seo, DJ Kim, JM Yu, JK Han, J Hur, GB Lee, ...
IEEE Electron Device Letters 43 (4), 521-524, 2022
1 2022 Visualization of domain structure and switching properties of Hf0. 5Zr0. 5O2 at various annealing temperatures for integrated ferroelectrics SJ Yun, YK Choi, H Kim, M Seo, MH Kang, SB Hong
The 6th International Conference on Electronic Materials and Nanotechnology …, 2020
2020 Effect of Additional Annealing on Ferroelectric Hafnium MS Seo, MH Kang, TH Kim, YI Goh, SH Jeon, YK Choi
ICEIC 2020, 2020
2020