Julien Frougier
Julien Frougier
IBM Research
Adresse e-mail validée de ibm.com
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Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...
2017 Symposium on VLSI Technology, T230-T231, 2017
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
SH Liang, TT Zhang, P Barate, J Frougier, M Vidal, P Renucci, B Xu, ...
Physical Review B 90 (8), 085310, 2014
Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers
J Frougier, G Baili, M Alouini, I Sagnes, H Jaffrès, A Garnache, C Deranlot, ...
Applied Physics Letters 103 (25), 252402, 2013
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current
SD J. Frougier, N. Shukla, D. Deng, M. Jerry, A. Aziz, L. Liu, G. Lavallee ...
VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016
Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors
J Zarpellon, H Jaffrès, J Frougier, C Deranlot, JM George, DH Mosca, ...
Physical Review B 86 (20), 205314, 2012
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
P Barate, S Liang, TT Zhang, J Frougier, M Vidal, P Renucci, X Devaux, ...
Applied Physics Letters 105 (1), 012404, 2014
Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector
BS Tao, P Barate, J Frougier, P Renucci, B Xu, A Djeffal, H Jaffrès, ...
Applied Physics Letters 108 (15), 152404, 2016
Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping
J Frougier, G Baili, I Sagnes, D Dolfi, JM George, M Alouini
Optics express 23 (8), 9573-9588, 2015
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
J Frougier, MG Sung, R Xie, C Park, S Bentley
US Patent 9,947,804, 2018
Channel geometry impact and narrow sheet effect of stacked nanosheet
CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ...
2018 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2018
Stacked nanosheet field-effect transistor with air gap spacers
J Frougier, R Xie, H Zang, K Cheng, T Yamashita, C Yeh
US Patent 10,269,983, 2019
Inner spacer formation for nanosheet field-effect transistors with tall suspensions
G Bouche, J Frougier, R Xie
US Patent 10,014,390, 2018
VSPIN: a new model relying on the vectorial description of the laser field for predicting the polarization dynamics of spin-injected V (e) CSELs
M Alouini, J Frougier, A Joly, G Baili, D Dolfi, JM George
Optics express 26 (6), 6739-6757, 2018
Bias Dependence of the Electrical Spin Injection into GaAs from Injectors with Different MgO Growth Processes
P Barate, SH Liang, TT Zhang, J Frougier, B Xu, P Schieffer, M Vidal, ...
Physical Review Applied 8 (5), 054027, 2017
Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence
B Tao, P Barate, X Devaux, P Renucci, J Frougier, A Djeffal, S Liang, B Xu, ...
Nanoscale 10 (21), 10213-10220, 2018
Inner spacer formation in a nanosheet field-effect transistor
J Frougier, R Xie
US Patent 10,651,291, 2020
A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices
N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019
Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device
J Frougier, A Razavieh, R Xie, S Bentley
US Patent 9,991,352, 2018
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019
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