Size effects in mechanical deformation and fracture of cantilevered silicon nanowires MJ Gordon, T Baron, F Dhalluin, P Gentile, P Ferret
Nano letters 9 (2), 525-529, 2009
222 2009 Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
178 2001 Laser diodes based on beryllium-chalcogenides A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ...
Applied physics letters 70 (3), 280-282, 1997
170 1997 Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p -type nonvolatile memory applications M Kanoun, A Souifi, T Baron, F Mazen
Applied Physics Letters 84 (25), 5079-5081, 2004
158 2004 Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices T Baron, F Martin, P Mur, C Wyon, M Dupuy
Journal of crystal growth 209 (4), 1004-1008, 2000
147 2000 Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 2007
143 2007 Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ...
Apl Materials 4 (4), 2016
138 2016 Control of gold surface diffusion on Si nanowires MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
136 2008 Chemical vapor deposition of Ge nanocrystals on T Baron, B Pelissier, L Perniola, F Mazen, JM Hartmann, G Rolland
Applied Physics Letters 83 (7), 1444-1446, 2003
132 2003 Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates S Chen, M Liao, M Tang, J Wu, M Martin, T Baron, A Seeds, H Liu
Optics express 25 (5), 4632-4639, 2017
129 2017 Single-electron charging effect in individual Si nanocrystals T Baron, P Gentile, N Magnea, P Mur
Applied physics letters 79 (8), 1175-1177, 2001
121 2001 How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
116 2003 Novel beryllium containing II–VI compounds: basic properties and potential applications A Waag, T Litz, F Fischer, HJ Lugauer, T Baron, K Schüll, U Zehnder, ...
Journal of crystal growth 184, 1-10, 1998
114 1998 Silicon nanocrystal memories S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
109 2004 Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy P Tsipas, D Tsoutsou, S Fragkos, R Sant, C Alvarez, H Okuno, G Renaud, ...
ACS nano 12 (2), 1696-1703, 2018
107 2018 Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication S Decossas, F Mazen, T Baron, G Brémond, A Souifi
Nanotechnology 14 (12), 1272, 2003
107 2003 Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004
104 2004 Toward a reliable chipless RFID humidity sensor tag based on silicon nanowires A Vena, E Perret, D Kaddour, T Baron
IEEE Transactions on Microwave Theory and Techniques 64 (9), 2977-2985, 2016
99 2016 Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy T Baron, K Saminadayar, N Magnea
Journal of applied physics 83 (3), 1354-1370, 1998
98 1998 A group-delay-based chipless RFID humidity tag sensor using silicon nanowires RS Nair, E Perret, S Tedjini, T Baron
IEEE Antennas and Wireless Propagation Letters 12, 729-732, 2013
96 2013 
Pascal GentileceaAdresse e-mail validée de cea.fr
