7.6 V Threshold Voltage High-Performance Normally-Off Al2 O3 /GaN MOSFET Achieved by Interface Charge Engineering Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang
IEEE Electron Device Letters 37 (2), 165-168, 2015
109 2015 High reverse blocking and low onset voltage AlGaN/GaN-on-Si lateral power diode with MIS-gated hybrid anode Q Zhou, Y Jin, Y Shi, J Mou, X Bao, B Chen, B Zhang
IEEE Electron Device Letters 36 (7), 660-662, 2015
101 2015 Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs R Hao, W Li, K Fu, G Yu, L Song, J Yuan, J Li, X Deng, X Zhang, Q Zhou, ...
IEEE Electron Device Letters 38 (11), 1567-1570, 2017
95 2017 Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE Transactions on Electron Devices 63 (2), 614-619, 2016
95 2016 High-Performance Enhancement-Mode Al2 O3 /AlGaN/GaN-on-Si MISFETs With 626 MW/ Figure of Merit Q Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B Zhang
IEEE Transactions on Electron Devices 62 (3), 776-781, 2015
84 2015 Carrier Transport Mechanisms Underlying the Bidirectional Shift in p-GaN Gate HEMTs Under Forward Gate Stress Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang
IEEE Transactions on Electron Devices 66 (2), 876-882, 2018
66 2018 Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ...
Applied Physics Letters 107 (26), 2015
61 2015 Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures J Zhang, X Kang, X Wang, S Huang, C Chen, K Wei, Y Zheng, Q Zhou, ...
IEEE Electron Device Letters 39 (6), 847-850, 2018
57 2018 Antiproliferative and apoptosis-inducing effect of exo-protoporphyrin IX based sonodynamic therapy on human oral squamous cell carcinoma Y Lv, J Zheng, Q Zhou, L Jia, C Wang, N Liu, H Zhao, H Ji, B Li, W Cao
Scientific reports 7 (1), 40967, 2017
56 2017 AlGaN/GaN MISHEMTs With High- Gate Dielectric S Yang, S Huang, H Chen, C Zhou, Q Zhou, M Schnee, QT Zhao, ...
IEEE Electron Device Letters 33 (7), 979-981, 2012
54 2012 Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement Q Zhou, W Chen, S Liu, B Zhang, Z Feng, S Cai, KJ Chen
IEEE transactions on electron devices 60 (3), 1075-1081, 2013
46 2013 High-Voltage and High-ION /IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination X Guo, Y Zhong, J He, Y Zhou, S Su, X Chen, J Liu, H Gao, X Sun, Q Zhou, ...
IEEE Electron Device Letters 42 (4), 473-476, 2021
44 2021 Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
44 2016 Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
43 2018 Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage Q Zhou, H Chen, C Zhou, ZH Feng, SJ Cai, KJ Chen
IEEE electron device letters 33 (1), 38-40, 2011
42 2011 Analytical switching loss model for GaN-based control switch and synchronous rectifier in low-voltage buck converters Y Xin, W Chen, R Sun, Y Shi, C Liu, Y Xia, F Wang, M Li, J Li, Q Zhou, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
34 2019 Device technologies of GaN-on-Si for power electronics: Enhancement-mode hybrid MOS-HFET and lateral diode Q Zhou, Y Yang, K Hu, R Zhu, W Chen, B Zhang
IEEE Transactions on Industrial electronics 64 (11), 8971-8979, 2017
33 2017 Design and experimental verification of an efficient SSCB based on CS-MCT X Xu, W Chen, H Tao, Q Zhou, Z Li, B Zhang
IEEE Transactions on Power Electronics 35 (11), 11682-11693, 2020
29 2020 Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2 O3 /GaN MOS Device Y Shi, Q Zhou, A Zhang, L Zhu, Y Shi, W Chen, Z Li, B Zhang
Nanoscale research letters 12, 1-6, 2017
29 2017 Silicon dioxide as an efficient adsorbent in the degumming of rapeseed oil Y Yao, C Liu, W Xiong, Q Liang, P Xuan, X Zeng, S Zeng, Q Zhou, ...
Journal of cleaner production 268, 122344, 2020
25 2020