| A new junction termination using a deep trench filled with BenzoCycloButene L Théolier, H Mahfoz-Kotb, K Isoird, F Morancho, S Assié-Souleille, ... IEEE Electron Device Letters 30 (6), 687-689, 2009 | 58 | 2009 |
| A new junction termination technique: The Deep Trench Termination (DT2) L Théolier, H Mahfoz-Kotb, K Isoird, F Morancho 2009 21st International Symposium on Power Semiconductor Devices & IC's, 176-179, 2009 | 51 | 2009 |
| Power electronic assemblies: Thermo-mechanical degradations of gold-tin solder for attaching devices F Arabi, L Theolier, D Martineau, JY Deletage, M Médina, E Woirgard Microelectronics Reliability 64, 409-414, 2016 | 21 | 2016 |
| Filling of very deep, wide trenches by benzocyclobutene polymer HE Mahfoz Kotb, K Isoird, F Morancho, L Théolier, T Do Conto Microsystem technologies 15, 1395-1400, 2009 | 20 | 2009 |
| Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling W Sabbah, F Arabi, O Avino-Salvado, C Buttay, L Théolier, H Morel Microelectronics Reliability 76, 444-449, 2017 | 18 | 2017 |
| Feasibility study of a junction termination using deep trench isolation technique for the realization of DT-SJMOSFETs H Mahfoz-Kotb, L Théolier, F Morancho, K Isoird, P Dubreuil, T Do Conto 2008 20th International Symposium on Power Semiconductor Devices and IC's …, 2008 | 17 | 2008 |
| Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs O Chihani, L Theolier, JY Deletage, E Woirgard, A Bensoussan, A Durier 2018 IEEE International Reliability Physics Symposium (IRPS), P-RT. 2-1-P-RT …, 2018 | 15 | 2018 |
| Identification and analysis of power substrates degradations subjected to severe aging tests E Woirgard, F Arabi, W Sabbah, D Martineau, L Theolier, S Azzopardi Microelectronics Reliability 55 (9-10), 1961-1965, 2015 | 14 | 2015 |
| New power module concept in PCB-embedded technology with silver sintering die attach A Tablati, N Alayli, T Youssef, O Belnoue, L Theolier, E Woirgard Microelectronics Reliability 114, 113891, 2020 | 11 | 2020 |
| Improvement of a bidirectional switch for electric network C Benboujema, A Schellmanns, L Théolier, L Ventura IEEE International conference on communication, computer and power (ICCCP'09 …, 2009 | 9 | 2009 |
| Conception de transistor MOS haute tension (1200 volts) pour l'électronique de puissance L Théolier Université Paul Sabatier-Toulouse III, 2008 | 9 | 2008 |
| Deep Trench MOSFET structures study for a 1200 Volts application L Théolier, K Isoird, F Morancho, J Roig, H Mahfoz-Kotb, M Brunet, ... 2007 European Conference on Power Electronics and Applications, 1-9, 2007 | 9 | 2007 |
| Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses O Chihani, L Theolier, A Bensoussan, JY Deletage, A Durier, E Woirgard Microelectronics Reliability 88, 402-405, 2018 | 8 | 2018 |
| Mechanical stress investigation after technological process in Deep Trench Termination DT2 using BenzoCycloButene as dielectric material H Arbess, F Baccar, L Theolier, S Azzopardi, E Woirgard Microelectronics Reliability 55 (9-10), 2017-2021, 2015 | 7 | 2015 |
| Thermo-mechanical reliability assessment of AlN power substrates subjected to severe aging tests F Arabi, L Theolier, D Martineau, JY Deletage, M Médina, E Woirgard Materials Focus 6 (3), 352-358, 2017 | 6 | 2017 |
| Effect of voids on crack propagation in AuSn die attach for high-temperature power modules F Arabi, L Theolier, T Youssef, M Medina, JY Deletage, E Woirgard 2017 18th International Conference on Thermal, Mechanical and Multi-Physics …, 2017 | 6 | 2017 |
| 2D finite elements electro-thermal modeling for IGBT: Uni and multicellular approach S Azzopardi, L Theolier, JY Deletage, E Woirgard 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and …, 2012 | 6 | 2012 |
| BJT application expansion by insertion of superjunction L Théolier, C Benboujema, A Schellmanns, N Batut, Y Raingeaud, ... 2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010 | 6 | 2010 |
| Conception de transistors MOS haute tension (1200 V) pour l'électronique de puissance L Théolier thèse de doctorat, Université de Toulouse, 2008 | 4 | 2008 |
| Apparent heat capacity model of the SiC MOSFET’s Aluminium top surface for short-circuits simulations F Loche-Moinet, L Theolier, E Woirgard 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics …, 2022 | 3 | 2022 |
