A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
171 2011 Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
164 2007 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
155 2009 Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
132 2009 Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 2008
83 2008 In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 2008
72 2008 An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 2013
66 2013 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 2011
65 2011 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 2010
64 2010 Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ...
Institute of Electrical and Electronics Engineers (IEEE), 2012
63 2012 Insights into Multilevel Resistive Switching in Monolayer MoS2 S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ...
ACS applied materials & interfaces 12 (5), 6022-6029, 2020
62 2020 Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of The Electrochemical Society 155 (2), G13, 2007
62 2007 The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
56 2013 Impact of H2/N2 annealing on interface defect densities in Si (100)/SiO2/HfO2/TiN gate stacks M Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ...
Microelectronic engineering 80, 70-73, 2005
50 2005 Traps in undoped semi‐insulating InP obtained by high temperature annealing G Marrakchi, K Cherkaoui, A Karoui, G Hirt, G Müller
Journal of applied physics 79 (9), 6947-6950, 1996
48 1996 Junctionless nanowire transistors for 3d monolithic integration of cmos inverters P Hurley, K Cherkaoui, V Djara
US Patent App. 14/782,570, 2016
42 2016 Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors RD Long, B Shin, S Monaghan, K Cherkaoui, J Cagnon, S Stemmer, ...
Journal of The Electrochemical Society 158 (5), G103, 2011
41 2011 Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
40 2013 Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation F Gity, K Yeol Byun, KH Lee, K Cherkaoui, JM Hayes, AP Morrison, ...
Applied Physics Letters 100 (9), 2012
40 2012 Properties of Cd1− xZnxTe crystals grown by high pressure Bridgman for nuclear detection P Fougeres, M Hage-Ali, JM Koebel, P Siffert, S Hassan, A Lusson, ...
Journal of crystal growth 184, 1313-1318, 1998
39 1998