| In situ optical monitoring of the decomposition of GaN thin films A Rebey, T Boufaden, B El Jani Journal of crystal growth 203 (1-2), 12-17, 1999 | 102 | 1999 |
| High quality GaN grown by MOVPE B Beaumont, M Vaille, T Boufaden, B El Jani, P Gibart Journal of crystal growth 170 (1-4), 316-320, 1997 | 77 | 1997 |
| Magnesium diffusion profile in GaN grown by MOVPE Z Benzarti, I Halidou, Z Bougrioua, T Boufaden, B El Jani Journal of crystal growth 310 (14), 3274-3277, 2008 | 50 | 2008 |
| Porous silicon as an intermediate buffer layer for GaN growth on (100) Si A Matoussi, T Boufaden, A Missaoui, S Guermazi, B Bessaıs, Y Mlik, ... Microelectronics journal 32 (12), 995-998, 2001 | 46 | 2001 |
| Heavily silicon-doped GaN by MOVPE I Halidou, Z Benzarti, Z Chine, T Boufaden, B El Jani Microelectronics journal 32 (2), 137-142, 2001 | 41 | 2001 |
| Effect of SiN treatment on GaN epilayer quality Z Benzarti, I Halidou, T Boufaden, B El Jani, S Juillaguet, M Ramonda physica status solidi (a) 201 (3), 502-508, 2004 | 37 | 2004 |
| Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment I Halidou, Z Benzarti, T Boufaden, B El Jani, S Juillaguet, M Ramonda Materials Science and Engineering: B 110 (3), 251-255, 2004 | 34 | 2004 |
| GaN thermal decomposition in N2 AP-MOCVD environment A Bchetnia, I Kemis, A Touré, W Fathallah, T Boufaden, B El Jani Semiconductor science and technology 23 (12), 125025, 2008 | 26 | 2008 |
| Silicon effect on GaN surface morphology Z Benzarti, I Halidou, O Tottereau, T Boufaden, B El Jani Microelectronics journal 33 (11), 995-998, 2002 | 22 | 2002 |
| GaN growth on porous silicon by MOVPE T Boufaden, N Chaaben, M Christophersen, B El Jani Microelectronics journal 34 (9), 843-848, 2003 | 21 | 2003 |
| Alternative N precursors and Mg doped GaN grown by MOVPE PG B.Beaumont, M. Vaille, P. Lorenzini, T. Boufaden, B. El Jani MRS Internet J..Nitride Semiconductor Research. 1, 17, 1996 | 18* | 1996 |
| Annealing effect on GaN buffer layer surface I Halidou, T Boufaden, A Touhami, A Rebey, B El Jani physica status solidi (a) 184 (1), 263-271, 2001 | 17 | 2001 |
| Characterization of GaN layers grown on porous silicon A Missaoui, M Saadoun, T Boufaden, B Bessaı̈s, A Rebey, H Ezzaouia, ... Materials Science and Engineering: B 82 (1-3), 98-101, 2001 | 16 | 2001 |
| Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth I Halidou, Z Benzarti, Z Bougrioua, T Boufaden, B El Jani Superlattices and Microstructures 40 (4-6), 490-495, 2006 | 15 | 2006 |
| Morphological study of GaN layers grown on porous silicon A Missaoui, H Ezzaouia, B Bessaıs, T Boufaden, A Matoussi, ... Materials Science and Engineering: B 93 (1-3), 102-106, 2002 | 15 | 2002 |
| Anti-stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process Z Chine, B Piriou, M Oueslati, T Boufaden, B El Jani Journal of luminescence 82 (1), 81-84, 1999 | 15 | 1999 |
| Morphological, structural and optical properties of GaN grown on porous silicon/Si (100) substrate A Matoussi, FB Nasr, R Salh, T Boufaden, S Guermazi, HJ Fitting, B Eljani, ... Materials Letters 62 (3), 515-519, 2008 | 14 | 2008 |
| High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE N Chaaben, T Boufaden, A Fouzri, MS Bergaoui, B El Jani Applied surface science 253 (1), 241-245, 2006 | 14 | 2006 |
| Laser‐reflectometry monitoring of the GaN growth by MOVPE using SiN treatment: study and simulation H Fitouri, Z Benzarti, I Halidou, T Boufaden, BE Jani physica status solidi (a) 202 (13), 2467-2473, 2005 | 14 | 2005 |
| Growth of GaN Films on porous silicon by MOVPE A Missaoui, M Saadoun, H Ezzaouia, B Bessais, T Boufaden, A Rebey, ... physica status solidi (a) 182 (1), 189-193, 2000 | 14 | 2000 |
Belgacem El JaniProfesseur de physique, université de MonastirAdresse e-mail validée de fsm.rnu.tn
