Giuseppe Fisicaro
Giuseppe Fisicaro
CNR Institute for Microelectronics and Microsystems
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Cited by
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A generalized Poisson and Poisson-Boltzmann solver for electrostatic environments
G Fisicaro, L Genovese, O Andreussi, N Marzari, S Goedecker
The Journal of chemical physics 144 (1), 014103, 2016
Soft-sphere continuum solvation in electronic-structure calculations
G Fisicaro, L Genovese, O Andreussi, S Mandal, NN Nair, N Marzari, ...
Journal of chemical theory and computation 13 (8), 3829-3845, 2017
N-type doping of Ge by As implantation and excimer laser annealing
R Milazzo, E Napolitani, G Impellizzeri, G Fisicaro, S Boninelli, ...
Journal of Applied Physics 115 (5), 053501, 2014
Towards a laser fluence dependent nanostructuring of thin Au films on Si by nanosecond laser irradiation
F Ruffino, A Pugliara, E Carria, L Romano, C Bongiorno, G Fisicaro, ...
Applied surface science 258 (23), 9128-9137, 2012
Solvent-aware interfaces in continuum solvation
O Andreussi, NG Hormann, F Nattino, G Fisicaro, S Goedecker, N Marzari
Journal of chemical theory and computation 15 (3), 1996-2009, 2019
B-doping in Ge by excimer laser annealing
G Impellizzeri, E Napolitani, S Boninelli, G Fisicaro, M Cuscunà, ...
Journal of Applied Physics 113 (11), 113505, 2013
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, ...
Nano letters 14 (4), 1769-1775, 2014
Anomalous Impurity Segregation and Local Bonding Fluctuation in -Si
G Fisicaro, K Huet, R Negru, M Hackenberg, P Pichler, N Taleb, ...
Physical Review Letters 110 (11), 117801, 2013
Defect kinetics and dopant activation in submicrosecond laser thermal processes
K Huet, G Fisicaro, J Venturini, H Besaucèle, A La Magna
Applied Physics Letters 95 (23), 231901, 2009
Flexibilities of wavelets as a computational basis set for large-scale electronic structure calculations
LE Ratcliff, W Dawson, G Fisicaro, D Caliste, S Mohr, A Degomme, ...
The Journal of chemical physics 152 (19), 194110, 2020
Continuum embeddings in condensed‐matter simulations
O Andreussi, G Fisicaro
International Journal of Quantum Chemistry 119 (1), e25725, 2019
Theoretical study of the laser annealing process in FinFET structures
SF Lombardo, G Fisicaro, I Deretzis, A La Magna, B Curver, B Lespinasse, ...
Applied Surface Science 467, 666-672, 2019
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
G Fisicaro, C Bongiorno, I Deretzis, F Giannazzo, F La Via, F Roccaforte, ...
Applied Physics Reviews 7 (2), 021402, 2020
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
SF Lombardo, S Boninelli, F Cristiano, G Fisicaro, G Fortunato, ...
Materials Science in Semiconductor Processing 62, 80-91, 2017
Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices
A La Magna, M Camarda, I Deretzis, G Fisicaro, S Coffa
Applied Physics Letters 100 (13), 134104, 2012
Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes
M Camarda, G Fisicaro, R Anzalone, S Scalese, A Alberti, F La Via, ...
Biomedical engineering online 13 (1), 1-10, 2014
Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon
G Fisicaro, L Pelaz, P Lopez, A La Magna
Physical Review E 86 (3), 036705, 2012
Modeling of laser annealing
G Fisicaro, A La Magna
Journal of Computational Electronics 13 (1), 70-94, 2014
Role of oxygen on the electrical activation of B in Ge by excimer laser annealing
G Impellizzeri, E Napolitani, R Milazzo, S Boninelli, M Cuscunà, ...
physica status solidi (a) 211 (1), 122-125, 2014
Modeling boron profiles in silicon after pulsed excimer laser annealing
M Hackenberg, K Huet, R Negru, J Venturini, G Fisicaro, A La Magna, ...
AIP Conference Proceedings 1496 (1), 241-244, 2012
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