Mahdi Pourfath
Mahdi Pourfath
Adresse e-mail validée de ut.ac.ir - Page d'accueil
Titre
Citée par
Citée par
Année
Modulation of electronic and mechanical properties of phosphorene through strain
M Elahi, K Khaliji, SM Tabatabaei, M Pourfath, R Asgari
Physical Review B 91 (11), 115412, 2015
1672015
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons
H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 111 (5), 054501, 2012
912012
Highly anisotropic thermal conductivity of arsenene: An ab initio study
M Zeraati, SMV Allaei, IA Sarsari, M Pourfath, D Donadio
Physical Review B 93 (8), 085424, 2016
902016
High sensitive and selective flexible H2S gas sensors based on Cu nanoparticle decorated SWCNTs
M Asad, MH Sheikhi, M Pourfath, M Moradi
Sensors and Actuators B: Chemical 210, 1-8, 2015
822015
Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices
H Karamitaheri, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 110 (5), 054506, 2011
732011
Method for predicting f/sub T/for carbon nanotube FETs
LC Castro, DL John, DL Pulfrey, M Pourfath, A Gehring, H Kosina
IEEE transactions on nanotechnology 4 (6), 699-704, 2005
732005
The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation
M Pourfath
Springer, 2014
612014
A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons
A Yazdanpanah, M Pourfath, M Fathipour, H Kosina, S Selberherr
Electron Devices, IEEE Transactions on 59 (2), 433-440, 2012
612012
A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor
S Mohammad Tabatabaei, M Noei, K Khaliji, M Pourfath, M Fathipour
Journal of Applied Physics 113 (16), 163708, 2013
512013
Device performance of graphene nanoribbon field-effect transistors in the presence of line-edge roughness
AY Goharrizi, M Pourfath, M Fathipour, H Kosina
IEEE Transactions on electron devices 59 (12), 3527-3532, 2012
512012
A multi-purpose Schrödinger-Poisson solver for TCAD applications
M Karner, A Gehring, S Holzer, M Pourfath, M Wagner, W Goes, ...
Journal of Computational Electronics 6 (1), 179-182, 2007
442007
Performance assessment of nanoscale field-effect diodes
N Manavizadeh, F Raissi, EA Soleimani, M Pourfath, S Selberherr
IEEE transactions on electron devices 58 (8), 2378-2384, 2011
362011
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2(, W;, Se)
M Hosseini, M Elahi, M Pourfath, D Esseni
IEEE Transactions on Electron Devices 62 (10), 3192-3198, 2015
352015
A comparative study of tunneling FETs based on graphene and GNR heterostructures
N Ghobadi, M Pourfath
IEEE Transactions on Electron Devices 61 (1), 186-192, 2013
342013
An analytical model for line-edge roughness limited mobility of graphene nanoribbons
AY Goharrizi, M Pourfath, M Fathipour, H Kosina, S Selberherr
IEEE transactions on electron devices 58 (11), 3725-3735, 2011
342011
Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications
M Hosseini, M Elahi, M Pourfath, D Esseni
Applied Physics Letters 107 (25), 253503, 2015
322015
Atomistic study of the lattice thermal conductivity of rough graphene nanoribbons
H Karamitaheri, M Pourfath, R Faez, H Kosina
IEEE Transactions on Electron Devices 60 (7), 2142-2147, 2013
312013
Tunneling CNTFETs
M Pourfath, H Kosina, S Selberherr
Journal of Computational Electronics 6 (1), 243-246, 2007
312007
Strain induced mobility modulation in single-layer MoS2
M Hosseini, M Elahi, M Pourfath, D Esseni
Journal of Physics D: Applied Physics 48 (37), 375104, 2015
302015
A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors
M Pourfath, H Kosina, S Selberherr
Journal of Computational Electronics 5 (2), 155-159, 2006
282006
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20