Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 2017
264 2017 Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode JG Lee, BR Park, CH Cho, KS Seo, HY Cha
IEEE Electron Device Letters 34 (2), 214-216, 2013
117 2013 State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates JG Lee, BR Park, HJ Lee, M Lee, KS Seo, HY Cha
Applied Physics Express 5 (6), 066502, 2012
65 2012 High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha
IEEE Electron Device Letters 34 (3), 354-356, 2013
63 2013 Stable Subloop Behavior in Ferroelectric Si-Doped HfO2 K Lee, HJ Lee, TY Lee, HH Lim, MS Song, HK Yoo, DI Suh, JG Lee, Z Zhu, ...
ACS applied materials & interfaces 11 (42), 38929-38936, 2019
61 2019 High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors JG Lee, HS Kim, KS Seo, CH Cho, HY Cha
Solid-State Electronics 122, 32-36, 2016
46 2016 Review of ferroelectric field‐effect transistors for three‐dimensional storage applications HW Park, JG Lee, CS Hwang
Nano Select 2 (6), 1187-1207, 2021
37 2021 Review of ferroelectric field-effect-transistors for three dimensional storage applications HW Park, JG Lee, CS Hwang
Nanoselect, 2021
37 2021 Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ...
Applied Physics Letters 115 (18), 2019
30 2019 Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor SW Han, JG Lee, CH Cho, HY Cha
Applied Physics Express 7 (11), 111002, 2014
30 2014 Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain JG Lee, SW Han, BR Park, HY Cha
Applied Physics Express 7 (1), 014101, 2013
30 2013 Nonvolatile memory device and method of fabricating the same HY Cha, JG Lee, KS Seo
KR Patent 1,013,953,740,000, 2014
21 2014 Schottky barrier diode embedded AlGaN/GaN switching transistor BR Park, JY Lee, JG Lee, DM Lee, MK Kim, HY Cha
Semiconductor science and technology 28 (12), 125003, 2013
21 2013 Normally-off AlGaN/GaN-on-Si power switching device with embedded Schottky barrier diode BR Park, JG Lee, HY Cha
Applied Physics Express 6 (3), 031001, 2013
21 2013 Field plated AlGaN/GaN-on-Si HEMTs for high voltage switching applications JG Lee, HJ Lee, HY Cha, MS Lee, YM Ryoo, KS Seo, JK Mun
Journal of the Korean Physical Society 59, 2011
19 2011 Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer JG Lee, HS Kim, DH Kim, SW Han, KS Seo, HY Cha
Semiconductor Science and Technology 30 (8), 085005, 2015
17 2015 Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere JG Lee, HS Kim, JY Lee, KS Seo, HY Cha
Semiconductor Science and Technology 30 (11), 115008, 2015
16 2015 High‐performance e‐mode algan/gan mis‐hemt with dual gate insulator employing sion and hfon IH Hwang, SK Eom, GH Choi, MJ Kang, JG Lee, HY Cha, KS Seo
Physica status solidi (a) 215 (10), 1700650, 2018
14 2018 Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process BR Park, JG Lee, HJ Lee, J Lim, KS Seo, HY Cha
Electronics Letters 48 (3), 181-182, 2012
14 2012 Robust SiNx /GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD X Meng, J Lee, A Ravichandran, YC Byun, JG Lee, AT Lucero, SJ Kim, ...
IEEE Electron Device Letters 39 (8), 1195-1198, 2018
13 2018