Jean-Philippe Attane
Jean-Philippe Attane
Université Grenoble Alpes
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Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials
JCR Sánchez, L Vila, G Desfonds, S Gambarelli, JP Attané, JM De Teresa, ...
Nature communications 4 (1), 2944, 2013
Spin pumping and inverse spin Hall effect in platinum: the essential role of spin-memory loss at metallic interfaces
JC Rojas-Sánchez, N Reyren, P Laczkowski, W Savero, JP Attané, ...
Physical review letters 112 (10), 106602, 2014
Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces
E Lesne, Y Fu, S Oyarzún, JC Rojas-Sánchez, DC Vaz, H Naganuma, ...
Nature materials 15 (12), 1261-1266, 2016
Non-adiabatic spin-torques in narrow magnetic domain walls
C Burrowes, AP Mihai, D Ravelosona, JV Kim, C Chappert, L Vila, A Marty, ...
Nature Physics 6 (1), 17-21, 2010
Non-volatile electric control of spin–charge conversion in a SrTiO3 Rashba system
P Noël, F Trier, LM Vicente Arche, J Bréhin, DC Vaz, V Garcia, S Fusil, ...
Nature 580 (7804), 483-486, 2020
Ordering intermetallic alloys by ion irradiation: A way to tailor magnetic media
H Bernas, JP Attané, KH Heinig, D Halley, D Ravelosona, A Marty, P Auric, ...
Physical review letters 91 (7), 077203, 2003
Mapping spin–charge conversion to the band structure in a topological oxide two-dimensional electron gas
DC Vaz, P Noël, A Johansson, B Göbel, FY Bruno, G Singh, ...
Nature materials 18 (11), 1187-1193, 2019
Individual domain wall resistance in submicron ferromagnetic structures
R Danneau, P Warin, JP Attané, I Petej, C Beigné, C Fermon, O Klein, ...
Physical review letters 88 (15), 157201, 2002
Experimental evidences of a large extrinsic spin Hall effect in AuW alloy
P Laczkowski, JC Rojas-Sánchez, W Savero-Torres, H Jaffrès, N Reyren, ...
Applied Physics Letters 104 (14), 2014
Spin pumping and inverse spin Hall effect in germanium
JC Rojas-Sánchez, M Cubukcu, A Jain, C Vergnaud, C Portemont, ...
Physical Review B 88 (6), 064403, 2013
Oxide spin-orbitronics: spin–charge interconversion and topological spin textures
F Trier, P Noël, JV Kim, JP Attané, L Vila, M Bibes
Nature Reviews Materials 7 (4), 258-274, 2022
Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
A Jain, JC Rojas-Sanchez, M Cubukcu, J Peiro, JC Le Breton, E Prestat, ...
arXiv preprint arXiv:1203.6491, 2012
Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities
P Laczkowski, Y Fu, H Yang, JC Rojas-Sánchez, P Noel, VT Pham, ...
Physical Review B 96 (14), 140405, 2017
Electron-magnon diffusion and magnetization reversal detection in FePt thin films
AP Mihai, JP Attané, A Marty, P Warin, Y Samson
Physical Review B 77 (6), 060401, 2008
Thermally activated depinning of a narrow domain wall from a single defect
JP Attané, D Ravelosona, A Marty, Y Samson, C Chappert
Physical review letters 96 (14), 147204, 2006
Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride
S Varotto, L Nessi, S Cecchi, J Sławińska, P Noël, S Petrò, F Fagiani, ...
Nature Electronics 4 (10), 740-747, 2021
Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the …
S Ghosh, T Komori, A Hallal, J Peña Garcia, T Gushi, T Hirose, H Mitarai, ...
Nano Letters 21 (6), 2580-2587, 2021
Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films
T Gushi, M Jovičević Klug, J Peña Garcia, S Ghosh, JP Attané, H Okuno, ...
Nano Letters 19 (12), 8716-8723, 2019
Detection of domain-wall position and magnetization reversal in nanostructures using the magnon contribution to the resistivity
VD Nguyen, L Vila, P Laczkowski, A Marty, T Faivre, JP Attané
Physical review letters 107 (13), 136605, 2011
Ferromagnetic/nonmagnetic nanostructures for the electrical measurement of the spin Hall effect
VT Pham, L Vila, G Zahnd, A Marty, W Savero-Torres, M Jamet, JP Attane
Nano letters 16 (11), 6755-6760, 2016
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