| Replacement metal gate and fabrication process with reduced lithography steps MG Sung, C Park, H Kim US Patent 10,176,996, 2019 | 327 | 2019 |
| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 175 | 2016 |
| Scaling Challenges for Advanced CMOS Devices AP Jacob, R Xie, MG Sung, L Liebmann, RTP Lee, B Taylor Scaling And Integration Of High-speed Electronics And Optomechanical Systems …, 2017 | 110 | 2017 |
| A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 108 | 2014 |
| Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products R Xie, KY Lim, MG Sung, RRH Kim US Patent 9,412,616, 2016 | 106 | 2016 |
| GaAs-based near-infrared omnidirectional reflector Y Park, YG Roh, CO Cho, H Jeon, MG Sung, JC Woo Applied physics letters 82 (17), 2770-2772, 2003 | 93 | 2003 |
| Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products R Xie, MG Sung, RRH Kim, KY Lim, C Park US Patent 9,362,181, 2016 | 78 | 2016 |
| Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure J Frougier, MG Sung, R Xie, C Park, S Bentley US Patent 9,947,804, 2018 | 71 | 2018 |
| Single and double diffusion breaks on integrated circuit products comprised of FinFET devices R Xie, KY Lim, MG Sung, RRH Kim US Patent 9,865,704, 2018 | 67 | 2018 |
| Roles of interfacial TiOxN1− x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks JS Kwak, YH Do, YC Bae, HS Im, JH Yoo, MG Sung, YT Hwang, JP Hong Applied Physics Letters 96 (22), 2010 | 66 | 2010 |
| Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time S Koveshnikov, K Matthews, K Min, DC Gilmer, MG Sung, S Deora, HF Li, ... 2012 International Electron Devices Meeting, 20.4. 1-20.4. 3, 2012 | 51 | 2012 |
| Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile … D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 50 | 2009 |
| Self-aligned wrap-around contacts for nanosheet devices R Xie, C Park, MG Sung, H Kim US Patent 9,847,390, 2017 | 49 | 2017 |
| Fin-type field effect transistors (FINFETS) with replacement metal gates and methods R Xie, L Economikos, C Park, MG Sung US Patent 10,177,041, 2019 | 47 | 2019 |
| Method and structure of forming self-aligned RMG gate for VFET R Xie, C Park, MG Sung, H Kim US Patent 9,780,208, 2017 | 45 | 2017 |
| Semiconductor device with a gate contact positioned above the active region R Xie, C Park, MG Sung, H Kim US Patent 9,735,242, 2017 | 43 | 2017 |
| High endurance performance of 1T1R HfOxbased RRAM at low (<20μA) operative current and elevated (150°C) temperature B Butcher, S Koveshnikov, DC Gilmer, G Bersuker, MG Sung, ... 2011 IEEE International Integrated Reliability Workshop Final Report, 146-150, 2011 | 43 | 2011 |
| Forming gate and source/drain contact openings by performing a common etch patterning process R Xie, WJ Taylor Jr, MG Sung US Patent 9,312,182, 2016 | 38 | 2016 |
| Semiconductor device with vertical channel transistor and method for fabricating the same MG Sung, HJ Cho, YS Kim, KY Lim, SA Jang US Patent 7,713,823, 2010 | 38 | 2010 |
| Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devices R Xie, MG Sung, CB Labelle, C Park, H Kim US Patent 9,761,495, 2017 | 34 | 2017 |
