Jerome Saint-Martin
Jerome Saint-Martin
Verified email at u-psud.fr - Homepage
Title
Cited by
Cited by
Year
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
F Mazzamuto, VH Nguyen, Y Apertet, C Caër, C Chassat, J Saint-Martin, ...
Physical Review B 83 (23), 235426, 2011
1532011
On the ballistic transport in nanometer-scaled DG MOSFETs
JS Martin, A Bournel, P Dollfus
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004
1282004
Thermoelectric effects in graphene nanostructures
P Dollfus, VH Nguyen, J Saint-Martin
Journal of Physics: Condensed Matter 27 (13), 133204, 2015
1092015
On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation
D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE transactions on electron devices 54 (9), 2232-2242, 2007
812007
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus
Semiconductor science and technology 21 (4), L29, 2006
732006
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J Saint-Martin, A Bournel, P Dollfus
Solid-State Electronics 50 (1), 94-101, 2006
612006
Experimental investigation on the quasi-ballistic transport: Part I—Determination of a new backscattering coefficient extraction methodology
V Barral, T Poiroux, J Saint-Martin, D Munteanu, JL Autran, S Deleonibus
IEEE transactions on electron devices 56 (3), 408-419, 2009
532009
A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach
D Querlioz, J Saint-Martin, VN Do, A Bournel, P Dollfus
IEEE transactions on nanotechnology 5 (6), 737-744, 2006
532006
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect
VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Nanotechnology 23 (6), 065201, 2012
502012
Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices
D Querlioz, J Saint-Martin, A Bournel, P Dollfus
Physical Review B 78 (16), 165306, 2008
492008
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ...
Applied Physics Letters 103 (18), 183509, 2013
482013
Thermoelectric performance of disordered and nanostructured graphene ribbons using Green’s function method
F Mazzamuto, J Saint-Martin, VH Nguyen, C Chassat, P Dollfus
Journal of Computational Electronics 11 (1), 67-77, 2012
422012
Monte Carlo study of apparent mobility reduction in nano-MOSFETs
K Huet, J Saint-Martin, A Bournel, S Galdin-Retailleau, P Dollfus, ...
ESSDERC 2007-37th European Solid State Device Research Conference, 382-385, 2007
412007
Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study
F Mazzamuto, J Saint-Martin, A Valentin, C Chassat, P Dollfus
Journal of Applied Physics 109 (6), 064516, 2011
402011
Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions
V Hung Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Applied Physics Letters 99 (4), 042105, 2011
392011
Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport
D Querlioz, HN Nguyen, J Saint-Martin, A Bournel, S Galdin-Retailleau, ...
Journal of computational electronics 8 (3-4), 324, 2009
372009
Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties
VT Tran, J Saint-Martin, P Dollfus, S Volz
Scientific reports 7 (1), 1-11, 2017
362017
Enhanced thermoelectric figure of merit in vertical graphene junctions
V Hung Nguyen, MC Nguyen, HV Nguyen, J Saint-Martin, P Dollfus
Applied Physics Letters 105 (13), 133105, 2014
352014
Pseudosaturation and negative differential conductance in graphene field-effect transistors
A Alarcón, VH Nguyen, S Berrada, D Querlioz, J Saint-Martin, A Bournel, ...
IEEE transactions on electron devices 60 (3), 985-991, 2013
312013
Étude par simulation Monte Carlo d'architectures de MOSFET ultracourts à grille multiple sur SOI
J Saint-Martin
292005
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