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Shi Ming
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Low temperature characterization of 14nm FDSOI CMOS devices
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim, G Ghibaudo
2014 11th International Workshop on Low Temperature Electronics (WOLTE), 29-32, 2014
612014
In depth characterization of electron transport in 14 nm FD-SOI CMOS devices
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim, G Ghibaudo
Solid-State Electronics 112, 13-18, 2015
312015
Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim, G Ghibaudo
Solid-State Electronics 108, 30-35, 2015
272015
Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim, G Ghibaudo
Solid-state electronics 99, 104-107, 2014
162014
Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method
Y Shin, W Chung, Y Seo, CH Lee, DK Sohn, BJ Cho
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
122014
Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells
M Mouis, JW Lee, D Jeon, M Shi, M Shin, G Ghibaudo
physica status solidi (c) 11 (1), 138-145, 2014
122014
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
M Shi, J Saint-Martin, A Bournel, D Querlioz, N Wichmann, S Bollaert, ...
Solid-state electronics 87, 51-57, 2013
112013
Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs
M Shin, M Shi, M Mouis, A Cros, E Josse, S Mukhopadhyay, B Piot, ...
Solid-State Electronics 103, 229-235, 2015
92015
Experimental and theoretical investigation of magnetoresistance from linear regime to saturation in 14-nm FD-SOI MOS devices
M Shin, M Shi, M Mouis, A Cros, E Josse, S Mukhopadhyay, B Piot, ...
IEEE Transactions on Electron Devices 62 (1), 3-8, 2014
92014
Monte Carlo simulation of III–V material-based MOSFET for high frequency and ultra-low consumption applications
M Shi, J Saint-Martin, A Bournel, H Maher, M Renvoise, P Dollfus
Journal of Nanoscience and Nanotechnology 10 (11), 7015-7019, 2010
82010
Numerical and experimental assessment of charge control in III–V nano-metal-oxide-semiconductor field-effect transistor
M Shi, J Saint-Martin, A Bournel, D Querlioz, P Dollfus, J Mo, N Wichmann, ...
Journal of Nanoscience and Nanotechnology 13 (2), 771-775, 2013
22013
Simulation monte carlo de MOSFET à base de materiaux III-V pour une électronique haute fréquence ultra basse consommation
M Shi
Paris 11, 2012
22012
Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
A Olivier, N Wichmann, JJ Mo, A Noudeviwa, Y Roelens, L Desplanque, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
22010
Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim, G Ghibaudo
2014 15th International Conference on Ultimate Integration on Silicon (ULIS …, 2014
12014
Numerical simulation of III–V FET architectures for high frequency and low consumption applications
M Shi, J Saint-Martin, A Bournel, P Dollfus
Microelectronic engineering 88 (4), 354-357, 2011
12011
Optimization of III-V FET architectures for high frequency and low consumption applications
M Shi, J Saint-Martin, A Bournel, P Dollfus
2010 Proceedings of the European Solid State Device Research Conference, 424-427, 2010
12010
Schrödinger-Poisson and Monte Carlo analysis of III–V MOSFETs for high frequency and low consumption applications
M Shi, J Saint-Martin, A Bournel, P Dollfus
2010 International Conference on Simulation of Semiconductor Processes and …, 2010
12010
Simulation Monte Carlo de MOSFET pour une électronique haute fréquence: Modélisation pour les transistors à base de matériaux III-V
M Shi
Editions universitaires europeennes, 2012
2012
Assessment of III–V MOSFET architectures for low power applications using static and dynamic numerical simulation
M Shi, J Saint-Martin, A Bournel, D Querlioz, P Dollfus, J Mo, N Wichmann, ...
IEEE 2011 International SOI Conference, 1-2, 2011
2011
Silicon and Column IV Semiconductors Devices
MH Han, CY Chang, HB Chen, YC Cheng, YC Wu, Q Xie, CJ Lee, J Xu, ...
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