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196 2013 On the origin of carrier localization in Ga1− xInxNyAs1− y/GaAs quantum wells MA Pinault, E Tournie
Applied Physics Letters 78 (11), 1562-1564, 2001
173 2001 Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014
146 2014 Near-field thermophotovoltaic conversion with high electrical power density and cell efficiency above 14% C Lucchesi, D Cakiroglu, JP Perez, T Taliercio, E Tournié, PO Chapuis, ...
Nano Letters 21 (11), 4524-4529, 2021
118 2021 Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm E Ryckeboer, A Gassenq, M Muneeb, N Hattasan, S Pathak, L Cerutti, ...
Optics express 21 (5), 6101-6108, 2013
113 2013 Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing E Tournié, MA Pinault, A Guzmán
Applied physics letters 80 (22), 4148-4150, 2002
111 2002 Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures E Tournié, KH Ploog
Thin Solid Films 231 (1-2), 43-60, 1993
109 1993 Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si JR Reboul, L Cerutti, JB Rodriguez, P Grech, E Tournié
Applied Physics Letters 99 (12), 2011
107 2011 Nanoindentation of Si, GaP, GaAs and ZnSe single crystals SE Grillo, M Ducarroir, M Nadal, E Tournie, JP Faurie
Journal of Physics D: Applied Physics 36 (1), L5, 2002
105 2002 Quantum cascade lasers grown on silicon H Nguyen-Van, AN Baranov, Z Loghmari, L Cerutti, JB Rodriguez, ...
Scientific reports 8 (1), 7206, 2018
99 2018 GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 L Cerutti, JB Rodriguez, E Tournié
IEEE photonics technology letters 22 (8), 553-555, 2010
98 2010 Silicon-based heterogeneous photonic integrated circuits for the mid-infrared G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
Optical Materials Express 3 (9), 1523-1536, 2013
88 2013 Semiconductor lasers: Fundamentals and applications A Baranov, E Tournié
Elsevier, 2013
85 2013 Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ...
Journal of applied physics 94 (4), 2319-2324, 2003
83 2003 Localized surface plasmon resonances in highly doped semiconductors nanostructures V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio
Applied Physics Letters 101 (16), 2012
81 2012 Brewster “mode” in highly doped semiconductor layers: an all-optical technique to monitor doping concentration T Taliercio, VN Guilengui, L Cerutti, E Tournié, JJ Greffet
Optics express 22 (20), 24294-24303, 2014
77 2014 Novel plastic strain‐relaxation mode in highly mismatched III‐V layers induced by two‐dimensional epitaxial growth A Trampert, E Tournie, KH Ploog
Applied physics letters 66 (17), 2265-2267, 1995
76 1995 Universal description of III-V/Si epitaxial growth processes I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ...
Physical review materials 2 (6), 060401, 2018
74 2018 Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells JM Chauveau, A Trampert, KH Ploog, E Tournié
Applied physics letters 84 (14), 2503-2505, 2004
74 2004 Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures E Tournie, N Grandjean, A Trampert, J Massies, KH Ploog
Journal of crystal growth 150, 460-466, 1995
74 1995 