Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 2007
143 2007 Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited S Blonkowski, M Regache, A Halimaoui
Journal of Applied Physics 90 (3), 1501-1508, 2001
125 2001 Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors F Mondon, S Blonkowski
Microelectronics Reliability 43 (8), 1259-1266, 2003
80 2003 MIM capacitance variation under electrical stress C Besset, S Bruyere, S Blonkowski, S Crémer, E Vincent
Microelectronics Reliability 43 (8), 1237-1240, 2003
62 2003 28nm advanced CMOS resistive RAM solution as embedded non-volatile memory A Benoist, S Blonkowski, S Jeannot, S Denorme, J Damiens, J Berger, ...
2014 IEEE international reliability physics symposium, 2E. 6.1-2E. 6.5, 2014
57 2014 Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance V Sousa, G Navarro, N Castellani, M Coue, O Cueto, C Sabbione, P Noe, ...
2015 Symposium on VLSI Technology (VLSI Technology), T98-T99, 2015
43 2015 Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling N Ben Hassine, D Mercier, P Renaux, G Parat, S Basrour, P Waltz, ...
Journal of Applied Physics 105 (4), 2009
43 2009 Filamentary model of dielectric breakdown S Blonkowski
Journal of Applied Physics 107 (8), 2010
41 2010 Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures S Blonkowski
Applied Physics Letters 91 (17), 2007
40 2007 Metal–insulator–metal capacitors using C Durand, C Vallée, V Loup, O Salicio, C Dubourdieu, S Blonkowski, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (3 …, 2004
38 2004 Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors E Deloffre, L Montès, G Ghibaudo, S Bruyère, S Blonkowski, S Bécu, ...
Microelectronics Reliability 45 (5-6), 925-928, 2005
37 2005 Experimental investigation of charge transfer at the semiconductor/electrolyte junction P Allongue, S Blonkowski, E Souteyrand
Electrochimica acta 37 (5), 781-797, 1992
35 1992 Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors C Durand, C Vallée, C Dubourdieu, M Kahn, M Derivaz, S Blonkowski, ...
Journal of Vacuum Science & Technology A 24 (3), 459-466, 2006
32 2006 Study of reaction coupling and interfacial kinetics at semiconductor electrodes by band edge shift measurements P Allongue, S Blonkowski, D Lincot
Journal of electroanalytical chemistry and interfacial electrochemistry 300 …, 1991
32 1991 Bipolar resistive switching from liquid helium to room temperature S Blonkowski, T Cabout
Journal of Physics D: Applied Physics 48 (34), 345101, 2015
31 2015 Frequency Effect on Voltage Linearity of T Bertaud, S Blonkowski, C Bermond, C Vallee, P Gonon, M Gros-Jean, ...
IEEE electron device letters 31 (2), 114-116, 2009
29 2009 Corrosion of III–V compounds; a comparative study of GaAs and InP: II. Reaction scheme and influence of surface properties P Allongue, S Blonkowski
Journal of electroanalytical chemistry and interfacial electrochemistry 317 …, 1991
28 1991 Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications M Kahn, C Vallée, E Defay, C Dubourdieu, M Bonvalot, S Blonkowski, ...
Microelectronics Reliability 47 (4-5), 773-776, 2007
27 2007 Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum AK Singh, S Blonkowski, M Kogelschatz
Journal of Applied Physics 124 (1), 2018
23 2018 N-doping impact in optimized Ge-rich materials based phase-change memory G Navarro, V Sousa, P Noe, N Castellani, M Coue, J Kluge, ...
2016 IEEE 8th International Memory Workshop (IMW), 1-4, 2016
23 2016 